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1.发明申请Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing 有权使用等离子体处理修改包含高k层的栅极电介质叠层的方法和系统公开(公告)号：US20060040483A1
公开(公告)日：2006-02-23
申请号：US10920990
申请日：2004-08-18
IPC分类号： H01L21/3205
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02274 , H01L21/28185 , H01L21/28202 , H01L21/3115 , H01L21/3144 , H01L21/3165 , H01L29/513 , H01L29/517
摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
摘要翻译： 一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。 该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力 被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。
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2.发明授权Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing 有权使用等离子体处理修改包含高k层的栅极电介质叠层的方法和系统公开(公告)号：US07163877B2
公开(公告)日：2007-01-16
申请号：US10920990
申请日：2004-08-18
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02274 , H01L21/28185 , H01L21/28202 , H01L21/3115 , H01L21/3144 , H01L21/3165 , H01L29/513 , H01L29/517
摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
摘要翻译： 一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。 该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力 被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。
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公开(公告)号：US07799668B2
公开(公告)日：2010-09-21
申请号：US11205477
申请日：2005-08-17
申请人： Hiroaki Niimi , Luigi Colombo , James J. Chambers
发明人： Hiroaki Niimi , Luigi Colombo , James J. Chambers
IPC分类号： H01L21/3205
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28229 , H01L21/31645 , H01L21/823857 , H01L21/8249 , H01L29/517
摘要： The present invention provides method of forming a gate dielectric that includes forming a metal source layer (210) comprising a metal and at least one nonmetallic element over a substrate (110). The metal source layer (210) is formed having a composition rich in the metal. A dielectric layer (310) comprising the metal is formed over the metal source layer (210).
摘要翻译： 本发明提供了形成栅极电介质的方法，其包括在衬底（110）上形成包括金属和至少一种非金属元素的金属源层（210）。 金属源层（210）形成为具有富含金属的组成。 在金属源层（210）之上形成包括金属的电介质层（310）。
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4.发明授权Method to maximize nitrogen concentration at the top surface of gate dielectrics 有权最大化栅极电介质顶表面的氮浓度的方法公开(公告)号：US08198184B2
公开(公告)日：2012-06-12
申请号：US12570620
申请日：2009-09-30
IPC分类号： H01L29/78 , H01L21/336 , H01L21/314
CPC分类号： H01L21/28202 , H01L21/3145 , H01L21/3185 , H01L29/4916 , H01L29/518 , H01L29/7833
摘要： An integrated circuit having a gate dielectric layer (414, 614, 814) having an improved nitrogen profile and a method of fabrication. The gate dielectric layer is a graded layer with a significantly higher nitrogen concentration at the electrode surface than near the substrate surface. An amorphous silicon layer (406) may be deposited prior to nitridation to retain the nitrogen concentration at the top surface (416). Alternatively, a thin silicon nitride layer (610) may be deposited after anneal or a wet nitridation process may be performed.
摘要翻译： 一种具有具有改进的氮分布的栅介电层（414,614,814）和一种制造方法的集成电路。 栅极电介质层是在电极表面处的氮浓度显着高于衬底表面附近的梯度层。 可以在氮化之前沉积非晶硅层（406）以将氮浓度保持在顶表面（416）。 或者，可以在退火之后沉积薄氮化硅层（610），或者可以执行湿式氮化处理。
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公开(公告)号：US20070042555A1
公开(公告)日：2007-02-22
申请号：US11205477
申请日：2005-08-17
申请人： Hiroaki Niimi , Luigi Colombo , James Chambers
发明人： Hiroaki Niimi , Luigi Colombo , James Chambers
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/8234
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28229 , H01L21/31645 , H01L21/823857 , H01L21/8249 , H01L29/517
摘要： The present invention provides method of forming a gate dielectric that includes forming a metal source layer (210) comprising a metal and at least one nonmetallic element over a substrate (110). The metal source layer (210) is formed having a composition rich in the metal. A dielectric layer (310) comprising the metal is formed over the metal source layer (210).
摘要翻译： 本发明提供了形成栅极电介质的方法，其包括在衬底（110）上形成包括金属和至少一种非金属元素的金属源层（210）。 金属源层（210）形成为具有富含金属的组成。 在金属源层（210）之上形成包括金属的电介质层（310）。
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公开(公告)号：US08800077B2
公开(公告)日：2014-08-12
申请号：US13264677
申请日：2010-04-21
申请人： Luigi Colombo
发明人： Luigi Colombo
IPC分类号： A47C17/56
摘要： A pull down bed with automatic locking device has a movable framework, which constitutes a mattress frame, and is hinged to a container body, which constitutes a piece of furniture, so as to define a closed position, in which said mattress frame is substantially inside the piece of furniture, and an open position, for use as a bed, in which the mattress frame is in a horizontal position and rests on the ground by means of two feet. The mattress frame is hinged to the piece of furniture at one end and has its feet at the other end. The pull down bed includes a device for locking said mattress frame in the closed or horizontal position, which is actuated by an actuation device, which includes the feet.
摘要翻译： 具有自动锁定装置的下拉床具有可移动的框架，其构成床垫框架，并铰接到构成一件家具的容器主体上，以限定关闭位置，其中所述床垫框架基本上在其内 家具和开放位置，用作床，其中床垫框架处于水平位置，并通过两个脚搁置在地面上。 床垫框架在一端铰接到一件家具，另一端有脚。 下拉床包括用于将所述床垫框架锁定在封闭或水平位置的装置，其由包括脚的致动装置致动。
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公开(公告)号：US08143212B2
公开(公告)日：2012-03-27
申请号：US12476785
申请日：2009-06-02
申请人： Martin Stogniew , Luigi Colombo , Romeo Ciabatti
发明人： Martin Stogniew , Luigi Colombo , Romeo Ciabatti
IPC分类号： A61K38/04
CPC分类号： C07H7/033 , A61K31/704 , A61K38/00 , C07H13/06 , C07H15/203 , C07K9/008 , Y02A50/475 , Y02A50/478 , Y02A50/479 , Y02A50/481 , A61K2300/00
摘要： The invention provides methods and compositions for treatment of bacterial infections. The composition may be a combination of factors, which include A0, A1, B1, B2, C0, C1, isoB0, and MAG, in the presence of low level solvent. Methods of the invention include administration of dalbavancin formulations for treatment of a bacterial infection, in particular a Gram-positive bacterial infection of skin and soft tissue. Dosing regimens include multiple dose administration of dalbavancin, which often remains at therapeutic levels in the bloodstream for at least one week, providing prolonged therapeutic action against a bacterial infection. Dosing regimens for renal patients are also included.
摘要翻译： 本发明提供了用于治疗细菌感染的方法和组合物。 该组合物可以是低浓度溶剂存在下的A0，A1，B1，B2，C0，C1，isoBO和MAG等因素的组合。 本发明的方法包括施用达巴万星制剂用于治疗细菌感染，特别是皮肤和软组织的革兰氏阳性细菌感染。 给药方案包括达巴万星的多剂量给药，其通常在血流中保持治疗水平至少一周，为细菌感染提供长时间的治疗作用。 还包括肾脏患者的给药方案。
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公开(公告)号：US08021990B2
公开(公告)日：2011-09-20
申请号：US12421036
申请日：2009-04-09
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/823857 , H01L21/823871 , H01L27/092 , H01L29/517 , H01L29/518
摘要： A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.
摘要翻译： 一种MOSFET结构，包括在栅极材料沉积之前具有栅极电介质的氮化处理的硅酸盐栅极电介质。
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公开(公告)号：US20110132810A1
公开(公告)日：2011-06-09
申请号：US12964567
申请日：2010-12-09
CPC分类号： B03C1/0335 , B03C1/005 , B03C1/035 , B03C2201/20
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。
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公开(公告)号：US07842567B2
公开(公告)日：2010-11-30
申请号：US12271080
申请日：2008-11-14
IPC分类号： H01L21/00
CPC分类号： H01L21/823842 , H01L21/28088 , H01L29/4966
摘要： Concurrently forming different metal gate transistors having respective work functions is disclosed. In one example, a metal carbide, which has a relatively low work function, is formed over a semiconductor substrate. Oxygen and/or nitrogen are then added to the metal carbide in a second region to establish a second work function in the second region, where the metal carbide itself establishes a first work function in a first region. One or more first metal gate transistor types are then formed in the first region and one or more second metal gate transistor types are formed in the second region.
摘要翻译： 同时形成具有各自功函数的不同金属栅极晶体管。 在一个实例中，在半导体衬底上形成具有较低功函数的金属碳化物。 然后在第二区域中将氧和/或氮添加到金属碳化物中以在第二区域中建立第二功函数，其中金属碳化物本身在第一区域中建立第一功函数。 然后在第一区域中形成一个或多个第一金属栅极晶体管类型，并且在第二区域中形成一个或多个第二金属栅极晶体管类型。
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