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1.发明授权Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing 有权使用等离子体处理修改包含高k层的栅极电介质叠层的方法和系统公开(公告)号：US07163877B2
公开(公告)日：2007-01-16
申请号：US10920990
申请日：2004-08-18
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02274 , H01L21/28185 , H01L21/28202 , H01L21/3115 , H01L21/3144 , H01L21/3165 , H01L29/513 , H01L29/517
摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
摘要翻译： 一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。 该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力 被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。
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2.发明申请Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing 有权使用等离子体处理修改包含高k层的栅极电介质叠层的方法和系统公开(公告)号：US20060040483A1
公开(公告)日：2006-02-23
申请号：US10920990
申请日：2004-08-18
IPC分类号： H01L21/3205
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02274 , H01L21/28185 , H01L21/28202 , H01L21/3115 , H01L21/3144 , H01L21/3165 , H01L29/513 , H01L29/517
摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
摘要翻译： 一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。 该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力 被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。
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3.发明授权Temperature measuring system, substrate processing apparatus and temperature measuring method 有权温度测量系统，基板加工设备和温度测量方法公开(公告)号：US09046417B2
公开(公告)日：2015-06-02
申请号：US13529391
申请日：2012-06-21
申请人： Tatsuo Matsudo , Kenji Nagai
发明人： Tatsuo Matsudo , Kenji Nagai
CPC分类号： G01J5/0896 , G01J5/0007
摘要： The temperature measuring system using optical interference includes a light source which generates measuring light; a spectroscope which measures an interference intensity distribution that is an intensity distribution of reflected light; optical transfer mechanisms which emit light reflected from a surface and a rear surface of the object to be measured to the spectroscope; an optical path length calculation unit which calculates an optical path length by performing Fourier transformation; and a temperature calculation unit which calculates a temperature of the object to be measured on the basis of a relation between optical path lengths and temperatures. The light source has a half-width at half-maximum of a light source spectrum that satisfies conditions based on a wavelength span of the spectroscope. The spectroscope measures the intensity distribution by using the number of samplings that satisfies conditions based on the wavelength span and a maximum measurable thickness.
摘要翻译： 使用光学干涉的温度测量系统包括产生测量光的光源; 测量作为反射光的强度分布的干涉强度分布的分光镜; 将从测量对象的表面和后表面反射的光发射到分光器的光学传递机构; 光路长度计算单元，其通过执行傅立叶变换来计算光程长度; 以及温度计算单元，其基于光程长度和温度之间的关系来计算被测量物体的温度。 光源具有满足基于分光器的波长跨度的条件的光源光谱的半值的半宽度。 分光镜通过使用满足基于波长跨度和最大可测量厚度的条件的采样数来测量强度分布。
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公开(公告)号：US09022645B2
公开(公告)日：2015-05-05
申请号：US13428207
申请日：2012-03-23
申请人： Tatsuo Matsudo
发明人： Tatsuo Matsudo
CPC分类号： G01K5/48 , G01K11/125
摘要： A plasma processing apparatus and a temperature measuring method that may measure a temperature of an object in a processing chamber by a low-coherence interferometer without forming a hole in a holding stage or an upper electrode of the plasma processing apparatus, thereby performing a plasma process of a substrate with high precision and uniformity. The plasma processing apparatus is implemented by disposing a light source collimator outside of a light source window, disposing a light-receiving collimator outside of a light-receiving window, allowing a measurement light emitted from the light source collimator to pass through the light source window to be obliquely emitted to a surface of the object to be measured, and allowing the reflected measurement light to pass through the light-receiving window to be incident on the light-receiving collimator. The temperature of the object in the processing chamber may be measured by the low-coherence interferometer.
摘要翻译： 一种等离子体处理装置和温度测量方法，其可以通过低相干干涉仪测量处理室中的物体的温度，而不在等离子体处理装置的保持阶段或上电极中形成孔，从而进行等离子体处理 的基板，具有高精度和均匀性。 等离子体处理装置通过在光源窗口外部设置光源准直器，将光接收准直仪配置在受光窗口外部，使从光源准直仪发出的测量光通过光源窗口 倾斜地发射到待测量物体的表面，并且允许反射的测量光通过受光窗口以入射到受光准直仪。 处理室中的物体的温度可以由低相干干涉仪来测量。
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公开(公告)号：US08825434B2
公开(公告)日：2014-09-02
申请号：US13248538
申请日：2011-09-29
申请人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
发明人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.
摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。
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6.发明授权Probe for temperature measurement, temperature measuring system and temperature measuring method using the same 有权温度测量探头，温度测量系统和使用温度测量的温度测量方法公开(公告)号：US08500326B2
公开(公告)日：2013-08-06
申请号：US13044705
申请日：2011-03-10
申请人： Tatsuo Matsudo
发明人： Tatsuo Matsudo
IPC分类号： G01N25/00
CPC分类号： G01K11/00
摘要： A probe for temperature measurement uses interference of a low-coherence light beam. The probe includes a temperature acquiring member configured to be brought into contact with a surface of a temperature measurement target and thermally assimilate with the temperature measurement target; a light irradiating/receiving unit configured to irradiate a measurement light beam as a low-coherence light beam to the temperature acquiring member and receive reflected light beams from a front surface and a rear surface of the temperature acquiring member; and a housing configured to define a distance between the temperature acquiring member and the light irradiating/receiving unit to a preset length and isolate optical paths of the measurement light beam and the two reflected light beams from an atmosphere in which the temperature measurement target is placed.
摘要翻译： 用于温度测量的探头使用低相干光束的干涉。 探头包括温度获取部件，其构造成与温度测量对象的表面接触并与温度测量目标热同化; 光照射/接收单元，被配置为将测量光束作为低相干光束照射到温度获取部件，并接收来自温度获取部件的前表面和后表面的反射光束; 以及壳体，其被构造成将所述温度获取构件和所述光照射/接收单元之间的距离限定到预定长度，并且隔离所述测量光束的光路和来自放置所述温度测量对象的气氛的所述两个反射光束 。
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公开(公告)号：US08144332B2
公开(公告)日：2012-03-27
申请号：US12399431
申请日：2009-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
CPC分类号： G01K11/00 , G01K11/125
摘要： A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
摘要翻译： 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。
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8.发明申请公开(公告)号：US20110211817A1
公开(公告)日：2011-09-01
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。
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9.发明授权公开(公告)号：US07582182B2
公开(公告)日：2009-09-01
申请号：US11742688
申请日：2007-05-01
IPC分类号： C23F1/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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公开(公告)号：US09038566B2
公开(公告)日：2015-05-26
申请号：US13278228
申请日：2011-10-21
申请人： Shinji Himori , Tatsuo Matsudo
发明人： Shinji Himori , Tatsuo Matsudo
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/32532 , H01J37/32568
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.
摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。
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