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    Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
    5.
    发明授权
    Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures 有权
    使用氧化剂/氢混合物退火超薄，高质量的栅氧化层的方法

    公开(公告)号：US06780719B2

    公开(公告)日：2004-08-24

    申请号：US09885744

    申请日：2001-06-20

    申请人： Hiroaki Niimi ,  Rajesh Khamankar ,  James J. Chambers ,  Sunil Hattangady ,  Antonio L. P. Rotondaro

    发明人： Hiroaki Niimi ,  Rajesh Khamankar ,  James J. Chambers ,  Sunil Hattangady ,  Antonio L. P. Rotondaro

    IPC分类号： H01L21336

    CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

    摘要： An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

    摘要翻译： 本发明的一个实施例是形成超薄介电层的方法，该方法包括以下步骤：提供具有半导体表面的基板; 在半导体表面上形成含氧层; 将含氧层暴露于含氮等离子体以在整个含氧层中产生均匀的氮分布; 并重新氧化和退火层以稳定氮分布，治愈等离子体诱导的损伤并降低界面缺陷密度。该退火步骤选自四种再氧化技术：在H2和N2的混合物中连续退火 （优选小于20％H 2），然后是O 2和N 2（优选小于20％O 2）的混合物;通过尖峰状升温（优选在1000至1150℃下优选小于1秒）在氮气中退火 （优选为N 2 / O 2或N 2 O / H 2）;通过在减压的氨中快速热加热（优选在600至1000℃下5至60秒）进行退火;在氧化剂/氢气混合物（优选N 2 O 1％H 2）在800至1050℃下进行5至60秒。

    Nitrogen based implants for defect reduction in strained silicon
    6.
    发明授权
    Nitrogen based implants for defect reduction in strained silicon 有权
    用于应变硅缺陷还原的氮基植入物

    公开(公告)号：US07670892B2

    公开(公告)日：2010-03-02

    申请号：US11268040

    申请日：2005-11-07

    申请人： Srinivasan Chakravarthi ,  Pr Chidambaram ,  Rajesh Khamankar ,  Haowen Bu ,  Douglas T. Grider

    发明人： Srinivasan Chakravarthi ,  Pr Chidambaram ,  Rajesh Khamankar ,  Haowen Bu ,  Douglas T. Grider

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L29/7833 ,  H01L21/26506 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843

    摘要： A transistor is fabricated upon a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced or otherwise adapted. A strain inducing layer is formed over the transistor to apply a strain thereto to alter transistor operating characteristics, and more particularly to enhance the mobility of carriers within the transistor. Enhancing carrier mobility allows transistor dimensions to be reduced while also allowing the transistor to operate as desired. However, high strain and temperature associated with fabricating the transistor result in deleterious plastic deformation. The yield strength of the silicon substrate is therefore adapted by incorporating nitrogen into the substrate, and more particularly into source/drain extension regions and/or source/drain regions of the transistor. The nitrogen can be readily incorporated during transistor fabrication by adding it as part of source/drain extension region formation and/or source/drain region formation. The enhanced yield strength of the substrate mitigates plastic deformation of the transistor due to the strain inducing layer.

    摘要翻译： 晶体管制造在半导体衬底上，其中衬底的屈服强度或弹性得到增强或适应。 应变感应层形成在晶体管上以向其施加应变以改变晶体管工作特性，更具体地说，增强晶体管内的载流子迁移率。 增强载流子迁移率允许晶体管尺寸减小，同时也允许晶体管根据需要进行操作。 然而，与制造晶体管相关的高应变和温度导致有害的塑性变形。 因此，硅衬底的屈服强度通过将氮掺入到衬底中，更具体地掺入晶体管的源极/漏极延伸区域和/或源极/漏极区域来适应。 在晶体管制造期间，可以通过将其作为源极/漏极延伸区域形成和/或源极/漏极区域形成的一部分来添加来将氮容易地并入。 由于应变诱导层，衬底的增强的屈服强度减轻了晶体管的塑性变形。

    Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments for Transistor Improvement
    7.
    发明申请
    Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments for Transistor Improvement 审中-公开
    使用In-SITU多重等离子体处理晶体管改进的层压应力覆盖层

    公开(公告)号：US20090152639A1

    公开(公告)日：2009-06-18

    申请号：US11959111

    申请日：2007-12-18

    申请人： Haowen Bu ,  Jerry Che-Jen Hu ,  Rajesh Khamankar

    发明人： Haowen Bu ,  Jerry Che-Jen Hu ,  Rajesh Khamankar

    IPC分类号： H01L29/94 ,  H01L21/31 ,  H01L21/8238 ,  H01L23/58

    CPC分类号： H01L21/022 ,  C23C14/0652 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/7843

    摘要： Integrated circuits (ICs) commonly contain pre-metal dielectric (PMD) liners with compressive stress to increase electron and hole mobilities in MOS transistors. The increase is limited by the thickness of the PMD liner. The instant invention is a multi-layered PMD liner in an integrated circuit which has a higher stress than single layer PMD liners. Each layer in the inventive PMD liner is exposed to a nitrogen-containing plasma, and which has a compressive stress higher than 1300 MPa. The PMD liner of the instant invention is composed of 3 to 10 layers. The hydrogen content of the first layer may be increased to improve transistor properties such as flicker noise and Negative Bias Temperature Instabilty (NBTI). An IC containing the inventive PMD liner and a method for forming same are also claimed.

    摘要翻译： 集成电路（IC）通常含有具有压应力的预金属电介质（PMD）衬垫，以增加MOS晶体管中的电子和空穴迁移率。 该增加受到PMD衬套的厚度的限制。 本发明是集成电路中的多层PMD衬垫，其具有比单层PMD衬垫更高的应力。 将本发明的PMD衬垫中的每个层暴露于含氮等离子体，并且具有高于1300MPa的压缩应力。 本发明的PMD衬垫由3〜10层构成。 可以增加第一层的氢含量以改善诸如闪烁噪声和负偏压温度不稳定性（NBTI）的晶体管特性。 还要求一种包含本发明的PMD衬垫的IC及其形成方法。