-
公开(公告)号：US4883562A
公开(公告)日：1989-11-28
申请号：US301467
申请日：1989-01-26
申请人： Hirofumi Ogawa , Kenji Sameshima , Tadaaki Hirai , Takaaki Unnai , Masanao Yamamoto , Keiichi Shidara , Junichi Yamazaki , Eikiyu Hiruma , Shirou Suzuki
发明人： Hirofumi Ogawa , Kenji Sameshima , Tadaaki Hirai , Takaaki Unnai , Masanao Yamamoto , Keiichi Shidara , Junichi Yamazaki , Eikiyu Hiruma , Shirou Suzuki
IPC分类号： H01J9/233 , H01J29/45 , H01L27/146 , H01L31/0248 , H01L31/0272 , H01L31/09 , H01L31/10 , H01L31/18 , H01L31/20
CPC分类号： H01L31/20 , H01J9/233 , H01L31/0272 , H01L31/095 , H01L31/1884 , Y02E10/50
摘要： A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.
摘要翻译： 使用非晶质光电导层制造图像拾取管靶（图1A）等的方法。 当在基板上设置电极，非晶半导体层等时，进行离子蚀刻离开基板的表面并形成电极的步骤，使得产生不产生缺陷的目标（图1A） 即使在目标上施加高电场，也在再现图像中基本上引起。
-
2.发明授权Method of fabricating an image pick-up tube and target section used therewith 失效制造图像拾取管的方法和与其一起使用的目标部分
公开(公告)号：US5021705A
公开(公告)日：1991-06-04
申请号：US357513
申请日：1989-05-24
申请人： Masanao Yamamoto , Takaaki Unnai , Shigeru Ehata , Tadaaki Hirai , Kenji Sameshima , Eikiyu Hiruma , Shirou Suzuki , Kenkichi Tanioka , Junichi Yamazaki , Keiichi Shidara
发明人： Masanao Yamamoto , Takaaki Unnai , Shigeru Ehata , Tadaaki Hirai , Kenji Sameshima , Eikiyu Hiruma , Shirou Suzuki , Kenkichi Tanioka , Junichi Yamazaki , Keiichi Shidara
CPC分类号： H01J29/456 , H01J9/233
摘要： An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.
摘要翻译： 一种图像拾取管及其制造方法，其中所述目标在至少包括用于光电转换的基板上的导电膜和光电导膜，以及信号 从目标部分通过电子束扫描系统读取。 目标部分的电子束扫描侧的有效扫描区域外的表面区域的至少一部分由二次电子发射阻挡层形成。
-
公开(公告)号：US5218264A
公开(公告)日：1993-06-08
申请号：US472886
申请日：1990-01-31
申请人： Tadaaki Hirai , Hirofumi Ogawa , Kenji Sameshima , Yukio Takasaki , Takaaki Unnai , Junichi Yamazaki , Misao Kubota , Kenkichi Tanioka , Eikyu Hiruma
发明人： Tadaaki Hirai , Hirofumi Ogawa , Kenji Sameshima , Yukio Takasaki , Takaaki Unnai , Junichi Yamazaki , Misao Kubota , Kenkichi Tanioka , Eikyu Hiruma
摘要： An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.
-
公开(公告)号：US5233265A
公开(公告)日：1993-08-03
申请号：US561678
申请日：1990-08-01
申请人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
发明人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01L31/0376 , H01L31/09 , H01L31/107 , H01L31/20
CPC分类号： H01J29/456 , H01L31/03765 , H01L31/095 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.
摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。 在本发明的一个方面，非晶半导体层是非晶态Se。 在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。 当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。
-
公开(公告)号：US4952839A
公开(公告)日：1990-08-28
申请号：US420773
申请日：1989-10-12
申请人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
-
公开(公告)号：US4888521A
公开(公告)日：1989-12-19
申请号：US69156
申请日：1987-07-02
申请人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。
-
公开(公告)号：US4980736A
公开(公告)日：1990-12-25
申请号：US155809
申请日：1988-02-16
申请人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi
发明人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi
IPC分类号： H01L31/0376 , H01L31/09 , H01L31/107 , H01L31/20
CPC分类号： H01L31/095 , H01L31/03765 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.
-
8.发明授权
公开(公告)号：US4900975A
公开(公告)日：1990-02-13
申请号：US67229
申请日：1987-06-29
申请人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
发明人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
CPC分类号： H01J29/456
摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。
-
公开(公告)号：US5070272A
公开(公告)日：1991-12-03
申请号：US547226
申请日：1990-07-03
申请人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
发明人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
IPC分类号： H01J31/38 , H01J29/45 , H01J29/86 , H01J29/88 , H01L27/146 , H01L31/024 , H01L31/0272 , H01L31/0392 , H01L31/09
CPC分类号： H01L31/0392 , H01J29/45 , H01L31/024 , H01L31/0272 , H01L31/09 , Y02E10/50
摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.
-
公开(公告)号：US5384597A
公开(公告)日：1995-01-24
申请号：US701508
申请日：1991-05-16
申请人： Kenji Sameshima , Tatsuo Makishima , Tadaaki Hirai , Yukio Takasaki , Misao Kubota , Kenkichi Tanioka , Keiichi Shidara
发明人： Kenji Sameshima , Tatsuo Makishima , Tadaaki Hirai , Yukio Takasaki , Misao Kubota , Kenkichi Tanioka , Keiichi Shidara
摘要： An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.
摘要翻译： 图像拾取管设置有第三电极，以控制包括目标电极和光导膜的图像拾取管目标部分中未被电子束扫描的区域的电位。 还公开了一种用于操作该图像拾取管的方法。 因此，可以抑制当使用具有较高目标电压（例如图像失真，阴影，瀑布现象和图像反转现象）的图像拾取管时产生的不期望的图像现象，从而实现高灵敏度图像拾取管。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.04 秒)
