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公开(公告)号：USRE38613E1
公开(公告)日：2004-10-05
申请号：US10174289
申请日：2002-09-18
IPC分类号： H01L2104
CPC分类号： H01L33/325 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals groups and alkyl radicals groups and/or phenyl radicals groups provided that the total amount of hydrogen radicals groups is less than or equal to the sum total of alkyl radicals groups and phenyl radicals groups present in the nitrogen compound used as the nitrogen source material.
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公开(公告)号：US6043140A
公开(公告)日：2000-03-28
申请号：US867964
申请日：1997-06-03
IPC分类号： C23C16/34 , C30B25/02 , C30B29/38 , H01L21/04 , H01L21/205 , H01L33/32 , H01S5/00 , H01S5/323
CPC分类号： H01L33/325 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals and alkyl radicals and/or phenyl radicals provided that the total amount of hydrogen radicals is less than or equal to the sum total of alkyl radicals and phenyl radicals present in the nitrogen compound used as the nitrogen source material.
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公开(公告)号：US06413312B1
公开(公告)日：2002-07-02
申请号：US09476544
申请日：2000-01-03
IPC分类号： C30B2502
CPC分类号： H01L33/325 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals and alkyl radicals and/or phenyl radicals provided that the total amount of hydrogen radicals is less than or equal to the sum total of alkyl radicals and phenyl radicals present in the nitrogen compound used as the nitrogen source material.
摘要翻译： 提供了一种用于生长p型氮化物III-V族化合物半导体的新型改进方法，其可以生产具有高载流子浓度的p型氮化物化合物半导体，而不需要退火以在生长后激活杂质。 在优选实施例中，p型氮化物半导体，例如p型GaN，通过金属有机化学气相沉积方法生长，使用在氮气释放期间不释放氢的氮源材料，并且半导体生长在 惰性气体 氮源材料可以选自含氢基团和烷基和/或苯基的氮化合物，条件是氢原子的总量小于或等于存在于氮化合物中的烷基和苯基的总和 用作氮源材料。
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4.发明申请Insulating nitride layer and process for its forming, and semiconductor device and process for its production 审中-公开绝缘氮化物层及其成型工艺，半导体器件及其制造方法公开(公告)号：US20050087751A1
公开(公告)日：2005-04-28
申请号：US10990116
申请日：2004-11-16
IPC分类号： H01L29/73 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/318 , H01L21/331 , H01L21/335 , H01L21/338 , H01L21/762 , H01L27/095 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/778 , H01L29/812 , H01L31/02 , H01L31/0304 , H01L33/02 , H01L33/08 , H01L33/14 , H01L33/30 , H01L33/32 , H01S5/026 , H01L33/00
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L33/02 , H01L33/145 , H01L33/305
摘要： Disclosed herein is an insulating nitride layer suitable for group III-V nitride semiconductor devices. It has a high resistance and good insulating properties and hence it electrically isolates elements, without the active layer decreasing in conductivity. Disclosed also herein is a process for forming said nitride layer and a semiconductor device having said nitride layer for improved characteristic properties. The semiconductor device is an AlGaN/GaN HEMT or the like which has a GaN active layer and an insulating nitride layer formed thereon from a group III-V nitride compound semiconductor heavily doped mostly with a group IIB element (particularly Zn) in an amount not less than 1×1017/cm3.
摘要翻译： 本文公开了适用于III-V族氮化物半导体器件的绝缘氮化物层。 它具有高电阻和良好的绝缘性能，因此电气隔离元件，而电导率不会降低活性层。 此处还公开了用于形成所述氮化物层的方法和具有用于改善特性的所述氮化物层的半导体器件。 半导体器件是AlGaN / GaN HEMT等，其具有由主要以IIB族元素（特别是Zn）重量掺杂的III-V族氮化物化合物半导体形成的GaN有源层和绝缘氮化物层， 小于1×10 17 / cm 3。
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5.发明授权公开(公告)号：US08903625B2
公开(公告)日：2014-12-02
申请号：US13133044
申请日：2008-12-05
CPC分类号： F02D41/1441 , F02D41/0085 , F02D2041/1418
摘要： A judging device comprises a catalyst, an upstream air/fuel ratio sensor having an air/fuel ratio sensing element covered with a diffusion resistance layer, and a downstream air/fuel ratio sensor. The judging device performs main feedback control to equalize the air/fuel ratio indicated by the output value of the upstream air/fuel ratio sensor to an upstream target air/fuel ratio and sub-feedback control to equalize the output value of the downstream air/fuel ratio sensor to a downstream target value. The judging device acquires “an imbalance judging parameter” which increases with “the increase of the difference between the amount of hydrogen contained in the exhaust gas before the exhaust gas passes through the catalyst and that after the exhaust gas passes through the catalyst” according to the sub-feedback amount. When the imbalance judging parameter is larger than an abnormality judgment threshold, the judging device judges that an air/fuel ratio imbalance among the cylinders has occurred. The judging device does not make judgment on air/fuel ratio imbalance among the cylinders if a predetermined judgment prohibition condition is satisfied, for example, if the flow of the exhaust gas is a predetermined value or more.
摘要翻译： 判断装置包括催化剂，具有覆盖有扩散电阻层的空气/燃料比感测元件的上游空燃比传感器和下游空气/燃料比传感器。 判断装置执行主反馈控制，以将由上游空燃比传感器的输出值表示的空燃比与上游目标空燃比和副反馈控制进行平衡，以使下游空气/燃料比传感器的输出值相等， 燃料比传感器到下游目标值。 判断装置获取“不平衡判定参数”，其随着“排气通过催化剂之前的排气中所含的氢的量与废气通过催化剂之后的氢气的差异的增加”增加，根据 子反馈量。 当不平衡判定参数大于异常判断阈值时，判断装置判断出气缸之间的空气/燃料比不平衡发生。 如果满足预定的判定禁止条件，例如如果排气的流量为预定值以上，则判断装置不判断气缸之间的空气/燃料比不平衡。
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6.发明授权Air-fuel ratio imbalance among cylinders determining apparatus for an internal combustion engine 有权用于内燃机的气缸确定装置之间的空燃比不平衡公开(公告)号：US08452517B2
公开(公告)日：2013-05-28
申请号：US13382079
申请日：2009-07-02
CPC分类号： F02D41/0085 , F02D41/1454 , F02D2400/18
摘要： An air-fuel ratio imbalance among cylinders determining apparatus according to the present invention comprises an air-fuel ratio sensor having a protective cover and an air-fuel ratio detection element accommodated in the protective cover, and imbalance determining means. The imbalance determining means obtains a detected air-fuel ratio abyfs based on an output Vabyfs of the air-fuel ratio sensor every elapse of a constant sampling time ts, and obtains, as an indicating amount of air-fuel ratio change rate, a difference (detected air-fuel ratio change rate ΔAF) between a present detected air-fuel ratio abyfs which is newly detected and a previous air-fuel ratio abyfsold which was detected the sampling time ts ago, an average of the detected air-fuel ratio change rate ΔAF, and the like. The imbalance determining means determines that the air-fuel ratio imbalance among cylinders state is occurring, when a magnitude of the indicating amount of air-fuel ratio change rate is larger than an imbalance determination threshold.
摘要翻译： 根据本发明的气缸确定装置之间的空燃比不平衡包括具有保护盖和容纳在保护盖中的空燃比检测元件的空燃比传感器和不平衡确定装置。 不平衡确定装置根据空燃比传感器每经过一定采样时间ts的输出Vabyfs获得检测的空燃比abyfs，并且获得作为空燃比变化率的指示量的差 在检测到的新检测到的当前检测空燃比abyfs与检测出采样时间ts前的空燃比abyfsold之间的检测空燃比变化率ΔAF（检测空燃比变化率ΔAF），检测到的空燃比变化的平均值 速率DeltaAF等。 当空燃比变化率的指示量大于不平衡判定阈值时，不平衡确定装置确定气缸状态之间的空燃比不平衡发生。
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7.发明授权公开(公告)号：US08447497B2
公开(公告)日：2013-05-21
申请号：US13496623
申请日：2009-09-18
IPC分类号： B60T7/12
CPC分类号： F02D41/00 , F02D41/0042 , F02D41/0085 , F02D41/1454 , F02D41/2441 , F02D41/2454
摘要： An apparatus for determining an air-fuel ratio imbalance among cylinders based on an output value of an air-fuel ratio sensor, an imbalance determination parameter which becomes larger or smaller as a difference among air-fuel ratios becomes larger, and performs determining an air-fuel ratio imbalance among cylinders based on a result of a comparison between the imbalance determination parameter and a imbalance determination threshold. The determining apparatus calculates a purge correction coefficient which compensates for a change in the air-fuel ratio due to an evaporated fuel gas which is generated in a fuel tank, while the evaporated fuel gas is being introduced into an intake passage, and corrects a fuel injection amount with the purge correction coefficient FPG.
摘要翻译： 一种用于基于空燃比传感器的输出值来确定气缸之间的空燃比不平衡的装置，作为空燃比之差变大或变小的不平衡确定参数变大，并且执行空气 - 基于不平衡确定参数和不平衡确定阈值之间的比较的结果，气缸之间的燃料比不平衡。 确定装置计算净化校正系数，其补偿由于在燃料箱中产生的蒸发燃料气体而引起的空燃比的变化，同时蒸发的燃料气体被引入进气通道中，并且校正燃料 喷射量与净化校正系数FPG。
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8.发明授权公开(公告)号：US08370043B2
公开(公告)日：2013-02-05
申请号：US13146354
申请日：2009-02-03
IPC分类号： G06F19/00
CPC分类号： F02D41/0085 , F02D41/0042 , F02D41/1441 , F02D41/1454 , F02D41/2454 , F02M25/08 , F02M35/10216 , F02M35/10386
摘要： An apparatus for determining an air-fuel ratio imbalance among cylinders including an upstream air-fuel ratio sensor, a catalytic converter, and a downstream air-fuel ratio sensor disposed at positions downstream of an exhaust gas aggregated portion, calculates a sub feedback amount to have an output value of the downstream air-fuel ratio sensor coincides with a value corresponding to the stoichiometric air-fuel ratio, and performs an air-fuel ratio feedback control to have an air-fuel ratio of a mixture supplied to an engine based on the sub feedback amount and the output value of the upstream air-fuel ratio sensor.
摘要翻译： 一种用于确定包括上游空燃比传感器，催化转化器和布置在废气聚集部分下游的下游空燃比传感器的气缸之间的空燃比不平衡的装置，计算副反馈量至 具有下游空燃比传感器的输出值与理论空燃比对应的值一致，进行空燃比反馈控制，使得供给发动机的混合气的空燃比基于 副反馈量和上游空燃比传感器的输出值。
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公开(公告)号：US20110282541A1
公开(公告)日：2011-11-17
申请号：US13146323
申请日：2009-01-28
申请人： Toru Kidokoro , Hiroshi Sawada , Yasushi Iwazaki , Fumihiko Nakamura , Shuntaro Okazaki , Masanori Ishida
发明人： Toru Kidokoro , Hiroshi Sawada , Yasushi Iwazaki , Fumihiko Nakamura , Shuntaro Okazaki , Masanori Ishida
IPC分类号： F01N11/00
CPC分类号： F02D41/0085 , F02D41/1441 , F02D41/1495 , F02D41/2454
摘要： A monitoring apparatus including a catalytic converter, an upstream air-fuel ratio sensor, and a downstream air-fuel ratio sensor; calculates a sub feedback amount to have an air-fuel ratio represented based on an output value of the downstream air-fuel ratio sensor coincide with a stoichiometric air-fuel ratio; and controls an fuel injection amount based on an output value of the upstream air-fuel ratio sensor and the sub feedback amount, in such a manner that an air-fuel ratio of a mixture supplied to an engine coincides with the stoichiometric air-fuel ratio.
摘要翻译： 一种监测装置，包括催化转化器，上游空燃比传感器和下游空燃比传感器; 计算出具有基于下游空燃比传感器的输出值表示的空燃比与副理论空燃比一致的副反馈量; 并且以提供给发动机的混合物的空燃比与理论空燃比一致的方式控制基于上游空燃比传感器的输出值和副反馈量的燃料喷射量 。
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10.发明授权公开(公告)号：US08047064B2
公开(公告)日：2011-11-01
申请号：US12393597
申请日：2009-02-26
IPC分类号： G01M15/10
CPC分类号： G01M15/104 , F02D41/0085 , F02D41/1441 , F02D41/1456
摘要： An apparatus or a method for detecting an abnormality of inter-cylinder air-fuel ratio dispersion in a multi-cylinder internal combustion engine according to the invention is equipped with a catalytic element that purifies exhaust gas of hydrogen, a first air-fuel ratio sensor that detects an air-fuel ratio of exhaust gas that has not passed through the catalytic element, a second air-fuel ratio sensor that detects an air-fuel ratio of exhaust gas that has passed through the catalytic element, a device that detects an abnormality of inter-cylinder air-fuel ratio dispersion on the basis of a divergence state of a detected value of a second air-fuel ratio to a lean side from a detected value of a first air-fuel ratio, and a device that forcibly reduces fuel injection amounts in cylinders individually when an abnormality on dispersion is detected by the abnormality detector, detects a divergence state of the detected value of the second air-fuel ratio to the lean side from the detected value of the first air-fuel ratio at this time, and specifies as an abnormal cylinder that one of the cylinders in which a value indicating this divergence state has become smaller than at a time of detection of the abnormality of dispersion.
摘要翻译： 根据本发明的用于检测多缸内燃机中的缸内空燃比分散异常的装置或方法装备有净化氢气废气的催化元件，第一空燃比传感器 检测未通过催化剂元件的废气的空燃比，检测通过催化元件的废气的空燃比的第二空燃比传感器，检测异常的装置 基于第一空燃比对第一空燃比的检测值与第一空燃比的检测值的偏差状态的液压缸间空燃比的分散，以及强制地减少燃料的装置 当由异常检测器检测到异常异常时，分别在气缸中的喷射量，从检测到的va检测到第二空气燃料比的检测值与偏斜侧的发散状态 此时指定第一空燃比，并且指定作为异常气缸，其中指示该发散状态的值的气缸中的一个已经变得比检测到色散异常时的小。
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