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公开(公告)号：US20110075693A1
公开(公告)日：2011-03-31
申请号：US12888670
申请日：2010-09-23
IPC分类号： H01S5/02
CPC分类号： H01S5/0425 , H01S5/02276 , H01S5/22 , H01S5/4031 , H01S2301/176
摘要： The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.
摘要翻译： 本发明提供一种半导体激光器，其即使在温度差大的恶劣环境下也能够降低布置在空气中的配线层的可能性。 在相邻的脊之间设置沟槽，并且在空气中至少在沟槽上方设置电连接上电极和焊盘电极的布线层。 沟槽上方部分的布线层具有朝沟槽凹陷的扁平形状或凹形。 通过这种结构，抑制了在温差大的恶劣环境下布线层重复膨胀和收缩时布线层中的应变累积。
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公开(公告)号：US20080128721A1
公开(公告)日：2008-06-05
申请号：US11873763
申请日：2007-10-17
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L33/00
摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译： 本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。
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3.发明申请Insulating nitride layer and process for its forming, and semiconductor device and process for its production 审中-公开绝缘氮化物层及其成型工艺，半导体器件及其制造方法公开(公告)号：US20050087751A1
公开(公告)日：2005-04-28
申请号：US10990116
申请日：2004-11-16
IPC分类号： H01L29/73 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/318 , H01L21/331 , H01L21/335 , H01L21/338 , H01L21/762 , H01L27/095 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/778 , H01L29/812 , H01L31/02 , H01L31/0304 , H01L33/02 , H01L33/08 , H01L33/14 , H01L33/30 , H01L33/32 , H01S5/026 , H01L33/00
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L33/02 , H01L33/145 , H01L33/305
摘要： Disclosed herein is an insulating nitride layer suitable for group III-V nitride semiconductor devices. It has a high resistance and good insulating properties and hence it electrically isolates elements, without the active layer decreasing in conductivity. Disclosed also herein is a process for forming said nitride layer and a semiconductor device having said nitride layer for improved characteristic properties. The semiconductor device is an AlGaN/GaN HEMT or the like which has a GaN active layer and an insulating nitride layer formed thereon from a group III-V nitride compound semiconductor heavily doped mostly with a group IIB element (particularly Zn) in an amount not less than 1×1017/cm3.
摘要翻译： 本文公开了适用于III-V族氮化物半导体器件的绝缘氮化物层。 它具有高电阻和良好的绝缘性能，因此电气隔离元件，而电导率不会降低活性层。 此处还公开了用于形成所述氮化物层的方法和具有用于改善特性的所述氮化物层的半导体器件。 半导体器件是AlGaN / GaN HEMT等，其具有由主要以IIB族元素（特别是Zn）重量掺杂的III-V族氮化物化合物半导体形成的GaN有源层和绝缘氮化物层， 小于1×10 17 / cm 3。
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公开(公告)号：US20110068363A1
公开(公告)日：2011-03-24
申请号：US12957908
申请日：2010-12-01
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L33/52
摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译： 一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。
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公开(公告)号：US08575643B2
公开(公告)日：2013-11-05
申请号：US11876909
申请日：2007-10-23
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.
摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。
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公开(公告)号：US08223814B2
公开(公告)日：2012-07-17
申请号：US12888670
申请日：2010-09-23
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/02276 , H01S5/22 , H01S5/4031 , H01S2301/176
摘要： The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.
摘要翻译： 本发明提供一种半导体激光器，其即使在温度差大的恶劣环境下也能够降低布置在空气中的配线层的可能性。 在相邻的脊之间设置沟槽，并且在空气中至少在沟槽上方设置电连接上电极和焊盘电极的布线层。 沟槽上方部分的布线层具有朝沟槽凹陷的扁平形状或凹形。 通过这种结构，抑制了在温差大的恶劣环境下布线层重复膨胀和收缩时布线层中的应变累积。
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公开(公告)号：US08217407B2
公开(公告)日：2012-07-10
申请号：US12957908
申请日：2010-12-01
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L21/00
摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译： 一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。
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公开(公告)号：US07858418B2
公开(公告)日：2010-12-28
申请号：US11873763
申请日：2007-10-17
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L21/00
摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译： 本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。
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公开(公告)号：US20080105885A1
公开(公告)日：2008-05-08
申请号：US11876909
申请日：2007-10-23
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.
摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。
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