Power transmission mechanism for a front and rear-wheel drive vehicle
    1.
    发明授权
    Power transmission mechanism for a front and rear-wheel drive vehicle 失效
    前轮和后轮驱动车辆的动力传递机构

    公开(公告)号:US06540636B2

    公开(公告)日:2003-04-01

    申请号:US09988191

    申请日:2001-11-19

    IPC分类号: F16H4806

    摘要: A power transmission mechanism for a front and rear-wheel drive vehicle in which the power of an electric motor is transmitted to rear wheels includes an output shaft adapted to rotate together with the electric motor, a middle shaft which is parallel with the output shaft, a drive shaft which is parallel with the output shaft and is adapted to rotate together with the rear wheels, a first pair of reduction gears for reducing the speed of rotation of the middle shaft relative to the output shaft, a second pair of reduction gears for reducing the speed of rotation of the drive shaft relative to the middle shaft and a rear differential disposed closer to an electric motor side than the second pair of reduction gears and coupled to the reduction gear and the drive shaft.

    摘要翻译: 一种用于前后轮驱动车辆的动力传递机构,其中电动机的动力传递到后轮,包括适于与电动机一起旋转的输出轴,与输出轴平行的中间轴, 驱动轴,其与所述输出轴平行并且与所述后轮一起旋转;第一对减速齿轮,用于减小所述中轴相对于所述输出轴的转动速度;第二对减速齿轮,用于 降低驱动轴相对于中轴的旋转速度和靠近电动机侧设置的后差速器,并且连接到减速齿轮和驱动轴。

    Synchronizing system and transmission torque control device therefor

    公开(公告)号:US06536572B2

    公开(公告)日:2003-03-25

    申请号:US09956929

    申请日:2001-09-21

    IPC分类号: F16D2306

    CPC分类号: F16D23/06 F16D2023/0656

    摘要: There are provided a synchronizing system which synchronizes two relatively rotating rotary bodies with each other by frictional forces generated between friction discs, such that a larger torque can be transmitted between the rotary bodies as an input torque becomes larger, and a transmission torque control device for the synchronizing system. In order to transmit torque between an input shaft and a gear member, the synchronizing system which connects the input shaft and the gear member with each other while synchronizing them urges a blocking ring toward the gear member by using a synchronizing spring, when a sleeve is caused to slide toward the blocking ring by an actuator. This starts synchronization of the input shaft and the gear member via friction discs rotating together with the blocking ring and friction discs rotating together with the gear member, and brings the tooth ends of the splines of the sleeve and the tooth ends of the splines of the blocking ring into abutment with each other, whereby the input shaft and the gear member are mechanically connected to each other.

    Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same
    4.
    再颁专利
    Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
    在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法

    公开(公告)号:USRE42180E1

    公开(公告)日:2011-03-01

    申请号:US12212105

    申请日:2008-09-17

    IPC分类号: H01L31/113 H01L29/76

    摘要: A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.

    摘要翻译: 半导体器件包括半导体衬底,形成在半导体衬底中的元件隔离区域,形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域,以及虚拟元件 元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。 在包括元件区域的1μm平方的感兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25%以上。

    Memory Element and Method for Manufacturing Same
    5.
    发明申请
    Memory Element and Method for Manufacturing Same 失效
    记忆元素及其制造方法

    公开(公告)号:US20080259680A1

    公开(公告)日:2008-10-23

    申请号:US11575091

    申请日:2005-11-04

    IPC分类号: G11C11/34 H01S4/00

    摘要: A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

    摘要翻译: 一种新颖的非易失性存储元件,其可以通过使用有机材料通过简单且高收率的方法制造并具有高的开/关比率,以及制造这种非易失性存储元件的方法。 在阳极层(12)和阴极层(16)之间设置由绝缘自由基聚合物构成的开关层(14)。 此外,在开关层(14)和阳极层(12)之间设置有空穴注入传输层(13),以及在开关层(14)和阴极层(16)之间的电子注入传输层(15) )。 在切换层和相邻层之间设置中间层。 自由基聚合物优选为氮氧自由基聚合物。 通过湿法堆叠形成开关层(14),空穴注入传输层(13)和电子注入传输层(15)。

    CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction
    6.
    发明授权
    CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
    CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层

    公开(公告)号:US07365949B2

    公开(公告)日:2008-04-29

    申请号:US11141543

    申请日:2005-05-31

    IPC分类号: G11B5/33 G11B5/127

    CPC分类号: G11B5/39 G11B5/3163 G11B5/398

    摘要: A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.

    摘要翻译: CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件(GMR)。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。 被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动,被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长,并且包括GMR中的第一部分。 第一部分设置在非磁性层和自由层的上方或下方。 第二部分在非磁性层的后面,高度方向上是自由层。 第一和第二部分在同一平面内。 第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

    Magnetoresistive-effect device and method for manufacturing the same
    8.
    发明授权
    Magnetoresistive-effect device and method for manufacturing the same 失效
    磁阻效应器件及其制造方法

    公开(公告)号:US06791804B2

    公开(公告)日:2004-09-14

    申请号:US10337479

    申请日:2003-01-06

    IPC分类号: G11B539

    摘要: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

    摘要翻译: 磁阻效应器件包括多层膜,布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下,形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上,感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时,直流电阻降低,同时改善了器件的再现特性。

    Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same
    9.
    发明授权
    Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
    具有扩展AFM层的磁阻效应器件及其制造方法

    公开(公告)号:US06690554B2

    公开(公告)日:2004-02-10

    申请号:US10337188

    申请日:2003-01-06

    IPC分类号: G11B539

    摘要: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

    摘要翻译: 磁阻效应器件包括多层膜,布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下,形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上,感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时,直流电阻降低,同时改善了器件的再现特性。

    Spin valve thin film magnetic element and method of manufacturing the same
    10.
    发明授权
    Spin valve thin film magnetic element and method of manufacturing the same 失效
    旋转阀薄膜磁性元件及其制造方法

    公开(公告)号:US06643107B1

    公开(公告)日:2003-11-04

    申请号:US09679724

    申请日:2000-10-04

    IPC分类号: G11B539

    摘要: The invention provides a spin valve thin film element in which output characteristics and the stability of reproduced waveforms are improved, asymmetry is decreased, and the occurrence of side reading is prevented. The spin valve thin film element includes a lamination having an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, and a backed layer composed of a nonmagnetic conductive material, which are laminated on a substrate. Hard bias layers are formed on both sides of the lamination, and orient the magnetization direction of the free magnetic layer in the direction crossing the magnetization direction of the second pinned magnetic layer. Electrode layers are formed on the hard bias layers to supply a sensing current J to the lamination. The electrode layers are formed to extend to the surface of the lamination toward the central portion from both sides of the lamination.

    摘要翻译: 本发明提供了一种自旋阀薄膜元件,其中输出特性和再现波形的稳定性得到改善,不对称性降低,并且防止了侧读出现。 自旋阀薄膜元件包括具有反铁磁层,第一钉扎磁性层,非磁性中间层,第二钉扎磁性层,非磁性导电层,自由磁性层和由非磁性导电性构成的背衬层的层压体 材料,其被层压在基底上。 在层叠体的两面形成有硬偏移层,并且在与第二被钉扎磁性层的磁化方向交叉的方向上使自由磁性层的磁化方向取向。 电极层形成在硬偏压层上,以向层压提供感测电流J。 电极层被形成为从层压体的两侧朝向中心部分延伸到层压体的表面。