利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.031 秒)

    Compound, polymer, and radiation-sensitive composition
    1.
    发明授权
    Compound, polymer, and radiation-sensitive composition 有权
    化合物，聚合物和辐射敏感组合物

    公开(公告)号：US08697331B2

    公开(公告)日：2014-04-15

    申请号：US12949795

    申请日：2010-11-19

    申请人： Hirokazu Sakakibara ,  Takehiko Naruoka ,  Makoto Shimizu ,  Yukio Nishimura ,  Nobuji Matsumura ,  Yuusuke Asano

    发明人： Hirokazu Sakakibara ,  Takehiko Naruoka ,  Makoto Shimizu ,  Yukio Nishimura ,  Nobuji Matsumura ,  Yuusuke Asano

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： C07C69/96 ,  C08F220/18 ,  C08F220/22 ,  C08F220/24 ,  C08F220/26 ,  C09D133/18 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A compound is shown by a following formula (1), wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or a derivative thereof, each of R3 represents at least one of a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, a derivative thereof, and a linear or branched alkyl group having 1 to 4 carbon atoms, provided that two of R3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof together with the carbon atom that is bonded thereto, and X represents a linear or branched fluoroalkylene group having 1 to 20 carbon atoms.

    摘要翻译： 化合物由下式（1）表示，其中R1表示氢原子，甲基或三氟甲基，R2表示亚甲基，亚乙基，1-甲基亚乙基，2-甲基亚乙基， 碳原子数4〜20的二价脂环式烃基或其衍生物，各R3表示碳原子数为4〜20的一价脂环族烃基，其衍生物和具有1个碳原子的直链或支链烷基中的至少一种 至4个碳原子，条件是R3中的两个可以键合形成具有4至20个碳原子的二价脂环族烃基或其衍生物和与其键合的碳原子，并且X表示具有1个碳原子的直链或支链氟亚烷基 至20个碳原子。

    NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION
    2.
    发明申请
    NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION 有权
    新型化合物，聚合物和辐射敏感组合物

    公开(公告)号：US20110104611A1

    公开(公告)日：2011-05-05

    申请号：US12949795

    申请日：2010-11-19

    申请人： Hirokazu Sakakibara ,  Takehiko Naruoka ,  Makoto Shimizu ,  Yukio Nishimura ,  Nobuji Matsumura ,  Yuusuke Asano

    发明人： Hirokazu Sakakibara ,  Takehiko Naruoka ,  Makoto Shimizu ,  Yukio Nishimura ,  Nobuji Matsumura ,  Yuusuke Asano

    IPC分类号： G03F7/004 ,  C07C69/96 ,  C08F120/22

    CPC分类号： C07C69/96 ,  C08F220/18 ,  C08F220/22 ,  C08F220/24 ,  C08F220/26 ,  C09D133/18 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A compound is shown by a following formula (1), wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or a derivative thereof, each of R3 represents at least one of a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, a derivative thereof, and a linear or branched alkyl group having 1 to 4 carbon atoms, provided that two of R3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof together with the carbon atom that is bonded thereto, and X represents a linear or branched fluoroalkylene group having 1 to 20 carbon atoms.

    摘要翻译： 化合物由下式（1）表示，其中R1表示氢原子，甲基或三氟甲基，R2表示亚甲基，亚乙基，1-甲基亚乙基，2-甲基亚乙基， 碳原子数4〜20的二价脂环式烃基或其衍生物，各R3表示碳原子数为4〜20的一价脂环族烃基，其衍生物和具有1个碳原子的直链或支链烷基中的至少一种 至4个碳原子，条件是R3中的两个可以键合形成具有4至20个碳原子的二价脂环族烃基或其衍生物和与其键合的碳原子，并且X表示具有1个碳原子的直链或支链氟亚烷基 至20个碳原子。

    POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION
    6.
    发明申请
    POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION 审中-公开
    积极工作的辐射敏感性组合物和使用组合物形成抗蚀剂图案的方法

    公开(公告)号：US20100068650A1

    公开(公告)日：2010-03-18

    申请号：US12529341

    申请日：2008-03-17

    申请人： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

    发明人： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

    IPC分类号： G03F7/039 ,  G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

    摘要： A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.

    摘要翻译： 提供了一种在液浸光刻工艺中使用双曝光图案化的图案化方法。 图案化方法包括使用第一抗蚀剂层形成组合物在基板上形成第一图案的步骤，使第一图案无效的步骤，在其上已经形成图案的基板上形成第二图案的步骤，使用 第二抗蚀剂层形成组合物并将第二抗蚀剂层暴露于辐射，以及在第一图案的空间区域中显影曝光的抗蚀剂层以形成第二图案的步骤。 第一抗蚀剂层形成组合物含有交联剂，其加速第一层从正性转变为负性转化。

    Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
    9.
    发明授权
    Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film 有权
    形成图案的方法，用于形成上层膜的组合物和用于形成底层膜的组合物

    公开(公告)号：US08119324B2

    公开(公告)日：2012-02-21

    申请号：US12375915

    申请日：2007-07-27

    申请人： Hikaru Sugita ,  Nobuji Matsumura ,  Daisuke Shimizu ,  Toshiyuki Kai ,  Tsutomu Shimokawa

    发明人： Hikaru Sugita ,  Nobuji Matsumura ,  Daisuke Shimizu ,  Toshiyuki Kai ,  Tsutomu Shimokawa

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/265

    摘要： A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.

    摘要翻译： 提供了适用于使用电子束（EB），X射线或极紫外线（EUV）形成微图案的图形形成方法。 该方法按以下顺序包括以下步骤：（1）形成和固化含有辐射敏感性酸产生剂的底层膜的步骤，所述辐射敏感酸产生剂在暴露于基材上时产生酸，（2）步骤 通过掩模用辐射照射底层膜以在底层膜的暴露区域中选择性地产生酸，（3）形成不含辐射敏感性的上层膜的步骤 酸产生剂，但含有能够通过酸的作用聚​​合或交联的组合物，（4）通过聚合或选择性地在上层膜对应于下面的区域的区域中选择性地交联固化膜的步骤 产生酸的层 - 膜，以及（5）除去与未生成酸的下层膜的面积对应的上层膜的面积的工序。