Image processing apparatus, image capturing system, image processing method, and recording medium

    公开(公告)号:US10937134B2

    公开(公告)日:2021-03-02

    申请号:US16474491

    申请日:2017-12-28

    摘要: An image processing apparatus, an image capturing system, an image processing method, and a recording medium are provided. The image processing apparatus: obtains a first image in a first projection, and a second image in a second projection; transforms projection of at least a part of the first image corresponding to the second image, from the first projection to the second projection, to generate a third image in the second projection; extracts a plurality of feature points, respectively, from the second image and the third image; determines a corresponding area in the third image that corresponds to the second image, based on the plurality of feature points respectively extracted from the second image and the third image; transforms projection of a plurality of points in the corresponding area of the third image, from the second projection to the first projection, to obtain location information indicating locations of the plurality of points in the first projection in the first image; and stores, in a memory, the location information indicating the locations of the plurality of points in the first projection in the first image, in association with the plurality of points in the second projection in the second image.

    Ceramic capacitor and electronic component including the same
    4.
    发明授权
    Ceramic capacitor and electronic component including the same 有权
    陶瓷电容器和包括其的电子部件

    公开(公告)号:US08797712B2

    公开(公告)日:2014-08-05

    申请号:US13534000

    申请日:2012-06-27

    IPC分类号: H01G4/228 H01G4/06

    摘要: In a ceramic capacitor, first and second electrode terminals each include a bonded-to-substrate portion, a first bonded-to-electrode portion bonded to a first edge of one of first and second external electrodes, a second bonded-to-electrode portion bonded to a second edge of the one of first and second external electrodes and disposed at a distance from the first bonded-to-electrode portion in the first directions, and a connecting portion connecting the first and second bonded-to-electrode portions and the bonded-to-substrate portion. W1/W0 is about 0.3 or more, and h/L is about 0.1 or more.

    摘要翻译: 在陶瓷电容器中,第一和第二电极端子各自包括接合到衬底部分,第一接合电极部分接合到第一和第二外部电极之一的第一边缘,第二接合电极部分 接合到第一外部电极和第二外部电极中的一个的第二边缘并且在第一方向上与第一接合电极部分设置一定距离,以及连接第一和第二接合电极部分和第二接合电极部分的连接部分, 键合到衬底部分。 W1 / W0为约0.3以上,h / L约为0.1以上。

    Roller bearing device having radial-plane arrangement structure of rotation sensor
    5.
    发明授权
    Roller bearing device having radial-plane arrangement structure of rotation sensor 有权
    滚子轴承装置具有旋转传感器的径向平面布置结构

    公开(公告)号:US08616775B2

    公开(公告)日:2013-12-31

    申请号:US13616851

    申请日:2012-09-14

    IPC分类号: F16C32/00 H02K5/16 G01B7/30

    摘要: Provided is a roller bearing device, which is suitable for preventing misdetection of a rotation sensor when a moment load is applied. A thin motor 100 includes a cross roller bearing 14 having an inner ring 14a and an outer ring 14b, a stator 22 supported by the inner ring 14a, a rotor 12 supported by the outer ring 14b, a motor unit 16 that applies rotation torque to the rotor 12, and a resolver 30 that detects a rotation angle position of the rotor 12. The resolver 30, the cross roller bearing 14, and the motor unit 16 are arranged in the recited order from the radially inner side on a radially identical plane.

    摘要翻译: 提供一种滚子轴承装置,其适用于在施加力矩载荷时防止旋转传感器错误检测。 薄电动机100包括具有内环14a和外环14b,由内环14a支撑的定子22,由外环14b支撑的转子12的交叉滚子轴承14,将旋转扭矩施加到 转子12和检测转子12的旋转角度位置的旋转变压器30.旋转变压器30,交叉滚子轴承14和马达单元16以径向相同的平面的径向内侧的顺序排列 。

    Method for manufacturing electronic component
    6.
    发明授权
    Method for manufacturing electronic component 有权
    电子元件制造方法

    公开(公告)号:US08382934B2

    公开(公告)日:2013-02-26

    申请号:US13183511

    申请日:2011-07-15

    IPC分类号: B29C65/02 B32B37/14

    摘要: A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.

    摘要翻译: 一种三轴加速度传感器,其具有包括接合到包括要被密封的机械可操作功能单元的基板的盖的结构,使得可以可靠地获得接合状态,以便不干扰功能的位移 单元。 密封框架由设置有功能单元的基板的上主表面的周边上的加热的聚酰亚胺制成,并且在盖的整个下主表面上形成由聚酰亚胺制成的密封层。 为了整合基板和盖以便密封功能单元,密封框架和密封层通过在约50℃到约50℃的温度下加热和加压密封框架和密封层而彼此接合 比使聚酰亚胺的玻璃化转变温度高150℃,同时使密封框和密封层相互接触。 在这种情况下,在密封层的一部分附近形成凹部以与密封框架接触,从而防止在接合步骤中变形的密封层产生的凸块朝向 功能单元。

    Organosilicon compound and thermosetting resin composition containing the same
    8.
    发明授权
    Organosilicon compound and thermosetting resin composition containing the same 有权
    有机硅化合物和含有它们的热固性树脂组合物

    公开(公告)号:US08273843B2

    公开(公告)日:2012-09-25

    申请号:US12765215

    申请日:2010-04-22

    IPC分类号: C08G77/12

    摘要: An organosilicon compound which is obtained by subjecting a compound (A), a compound (B) and a compound (C) to hydrosilylation reaction: (A) silicone and/or silsesquioxane that has two or more Si—H groups per one molecule and has a molecular weight of 100 to 500,000; (B) silicone and/or silsesquioxane that has two or more alkenyl groups per one molecule and has a molecular weight of 100 to 500,000; and (C) a compound that has one or more epoxy or oxetanyl group and an alkenyl group having 2 to 18 carbon atoms per one molecule.

    摘要翻译: 通过使化合物(A),化合物(B)和化合物(C)进行氢化硅烷化反应得到的有机硅化合物:(A)每分子具有2个以上的Si-H基的硅氧烷和/或倍半硅氧烷, 分子量为100〜500,000; (B)每分子具有两个或更多个烯基并且分子量为100至500,000的硅氧烷和/或倍半硅氧烷; 和(C)每分子具有一个或多个环氧基或氧杂环丁烷基和具有2至18个碳原子的烯基的化合物。

    Semiconductor device having a dummy gate
    9.
    发明授权
    Semiconductor device having a dummy gate 有权
    具有虚拟栅极的半导体器件

    公开(公告)号:US08026536B2

    公开(公告)日:2011-09-27

    申请号:US11391286

    申请日:2006-03-29

    申请人: Kazuhiro Yoshida

    发明人: Kazuhiro Yoshida

    IPC分类号: H01L23/52

    摘要: A semiconductor device includes a plurality of MOS transistors, wherein each of the MOS transistors has a drain region, a pair of source regions sandwiching therebetween the drain region, and a pair of normal gates each overlying a space between the drain region and a corresponding one of the source regions. A plurality of dummy gates are provided each between adjacent two of the MOS transistors. The dummy gate electrodes are maintained at an equi-potential with the adjacent drain regions. MOS transistors include a row of pMOS transistors and nMOS transistors, wherein each of pMOS transistors and a corresponding nMOS transistor configure a CMOS gate, and a plurality of CMOS gates configure a ring oscillator.

    摘要翻译: 一种半导体器件包括多个MOS晶体管,其中每个MOS晶体管具有漏极区域,一对源极区域夹在它们之间的漏极区域以及一对法向栅极,每对栅极覆盖漏极区域和相应的一个漏极区域之间的空间 的源地区。 在相邻的两个MOS晶体管之间设置多个伪栅极。 虚拟栅极电极与相邻的漏极区域保持等电位。 MOS晶体管包括一行pMOS晶体管和nMOS晶体管,其中pMOS晶体管和相应的nMOS晶体管中的每一个构成CMOS栅极,并且多个CMOS栅极配置环形振荡器。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07952164B2

    公开(公告)日:2011-05-31

    申请号:US12607450

    申请日:2009-10-28

    申请人: Kazuhiro Yoshida

    发明人: Kazuhiro Yoshida

    IPC分类号: H01L29/00 H01L29/8605

    CPC分类号: H01L27/101 H01L27/0802

    摘要: The semiconductor device includes a resistor cell that includes a diffused layer resistor, a P-well contact and an N-well contact. The diffused layer resistor is arranged on a semiconductor substrate and is formed by a diffused layer. The P-well contact surrounds an outer rim of the diffused layer resistor and is formed by another diffused layer. The N-well contact is arranged surrounding the outer rim of the P-well contact and is formed by a further diffused layer. Both the P-well and N-well contacts are partitioned into contact portions. Control electrode layer portions are arranged between neighboring contact sections of the P-well contact so the contact sections of the P-well contact and the control electrode layer portions alternate. Control electrode layer portions are arranged between neighboring contact sections of the N-well contact so that the contact sections of the N-well contact and the control electrode layer portions alternate with one another.

    摘要翻译: 该半导体器件包括电阻单元,其包括扩散层电阻器,P阱触点和N阱触点。 扩散层电阻器布置在半导体衬底上并且由扩散层形成。 P阱接触包围扩散层电阻器的外缘,并由另一个扩散层形成。 N阱接触设置在P阱接触的外缘周围,并由另外的扩散层形成。 P阱和N阱触点都被分隔成接触部分。 控制电极层部分布置在P阱触点的相邻接触部分之间,使得P阱触点和控制电极层部分的接触部分交替。 控制电极层部分布置在N阱接触的相邻接触部分之间,使得N阱接触部分和控制电极层部分的接触部分彼此交替。