摘要:
An information recording medium capable of high-density recording and accurate reproduction and also capable of repeated recording and reproduction, an information recording device that employs the information recording medium has a Co—Si oxide thin film 1 constructed such that columnar crystals 2 are separated by an intergranular phase 3 which contains SiO2 having a lower coefficient of thermal conductivity than the columnar crystals 2. Therefore, the intergranular phase 3 prevents heat transfer from one columnar crystal 2 to another. In addition, the intergranular phase 3 separates columnar crystals 2 from each other, so that the crystalline structure of each columnar crystal 2 is not affected by its adjacent columnar crystal 2. The advantage of such construction is that the columnar crystals 2 do not undergo phase transformation except for those which were given energy necessary for phase transformation directly from the laser beam, and hence columnar crystals 2 overheated by the laser beam do not affect their adjacent columnar crystals. Thus it is possible to accurately form recording pits whose mark length is smaller than the laser beam diameter.
摘要:
An information recording medium capable of high-density recording and accurate reproduction and also capable of repeated recording and reproduction, an information recording device that employs the information recording medium has a Co—Si oxide thin film 1 constructed such that columnar crystals 2 are separated by an intergranular phase 3 which contains SiO2 having a lower coefficient of thermal conductivity than the columnar crystals 2. Therefore, the intergranular phase 3 prevents heat transfer from one columnar crystal 2 to another. In addition, the intergranular phase 3 separates columnar crystals 2 from each other, so that the crystalline structure of each columnar crystal 2 is not affected by its adjacent columnar crystal 2. The advantage of such construction is that the columnar crystals 2 do not undergo phase transformation except for those which were given energy necessary for phase transformation directly from the laser beam, and hence columnar crystals 2 overheated by the laser beam do not affect their adjacent columnar crystals. Thus it is possible to accurately form recording pits whose mark length is smaller than the laser beam diameter.
摘要:
The magnetic recording medium includes an underlayer 12 formed of an inorganic compound layer, and a magnetic layer 13 formed over the underlayer 12. The inorganic compound layer as the underlayer 12 has crystal grains and at least one kind of oxide, the crystal grains having as main elements at least one of cobalt oxide, chromium oxide, iron oxide and nickel oxide, the at least one kind of oxide lying as a non-crystalline phase in grain boundaries between the crystal grains and selected from among silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide.
摘要:
A magnetic recording medium includes a non-magnetic substrate, an inorganic compound layer that is formed on the substrate and which contains a crystalline first oxide and a second oxide, and a magnetic layer that is formed on the inorganic compound layer. The crystalline first oxide comprises at least one oxide selected from cobalt oxide, chromium oxide, iron oxide and nickel oxide. The second oxide comprises at least one oxide selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide. The second oxide is present at a grain boundary of crystal grains of said first oxide. According to the present invention, magnetic recording media low in noise and diminished in thermal fluctuation and thermal decay can be obtained by making fine the crystal grains of a magnetic layer and controlling the dispersion of the grain size. Thus, magnetic recording apparatuses can be realized which can perform an ultrahigh density magnetic recording of higher than 20 Gb/in2.
摘要:
A magneto-optical storage apparatus including an ultra-high density information recording media having an inorganic compound layer 12 on a substrate 11, and in the inorganic compound layer 12, an oxide of at least one kind selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide exists in an amorphous state at a grain boundary of crystal grain of an oxide of at least one kind selected from cobalt oxide, iron oxide, and nickel oxide. The media has a magnetic layer 13 made of an artificial lattice multilayer obtained by alternately laminating a Co layer or an alloy layer consisting of Co as a main phase and a metal element layer of at least one kind selected from Pt and Pd onto the layer 12. Thus, a distribution of magnetic properties serving as a pinning site of the movement of a magnetic wall in case of recording information to the magnetic layer 13 is formed in the magnetic layer 13.
摘要:
An ultra-high density information recording media has an inorganic compound layer 12 on a substrate 11, and in the inorganic compound layer 12, an oxide of at least one kind selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide exists in an amorphous state at a grain boundary of crystal grain of an oxide of at least one kind selected from cobalt oxide, iron oxide, and nickel oxide. The media has a magnetic layer 13 made of an artificial lattice multilayer obtained by alternately laminating a Co layer or an alloy layer consisting of Co as a main phase and a metal element layer of at least one kind selected from Pt and Pd onto the layer 12. Thus, a distribution of magnetic properties serving as a pinning site of the movement of a magnetic wall in case of recording information to the magnetic layer 13 is formed in the magnetic layer 13.
摘要:
The magnetic recording medium includes an underlayer 12 formed of an inorganic compound layer, and a magnetic layer 13 formed over the underlayer 12. The inorganic compound layer as the underlayer 12 has crystal grains and at least one kind of oxide, the crystal grains having as main elements at least one of cobalt oxide, chromium oxide, iron oxide and nickel, the at least one kind of oxide lying as a non-crystalline phase in grain boundaries between the crystal grains and selected from among silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide.
摘要:
The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10−4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.
摘要:
The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10−4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.
摘要:
A compound constructed by N (N is an integer of 2 or more) kinds of phases containing at least one kind of elements selected from a group consisting of Co, Ti, V, Cr, Mn, Fe, Ni, Si, Pb, Bi and Al. At least one kind to (N−1) kinds among the N kinds of phases are continuous phases, and the other phases are discontinuous phases.