公开(公告)号：US20100208764A1

公开(公告)日：2010-08-19

申请号：US12542806

申请日：2009-08-18

申请人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

发明人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

IPC分类号： H01S5/18

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/185

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 形成在半导体衬底上并包括第一导电类型的半导体多层的下反射器; 上反射器，其形成在所述半导体衬底上并且包括第二导电类型的半导体多层; 位于下反射器和上反射器之间的有源区; 介于所述下反射器和所述上反射器之间并且具有在垂直于光轴的平面中具有各向异性形状的导电区域的电流限制层; 以及电极，其形成在上反射体上并具有通过该开口射出激光束的开口，该开口在各向异性形状的方向上具有不同的边缘形状。

公开(公告)号：US07098059B2

公开(公告)日：2006-08-29

申请号：US11109753

申请日：2005-04-20

申请人： Hiromi Otoma ,  Jun Sakurai

发明人： Hiromi Otoma ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  G01R31/26

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

摘要翻译： 表面发射半导体激光器包括衬底，形成在衬底上的第一半导体多层反射器，形成在第一半导体多层反射器上的有源区，形成在有源区上的第二半导体多层反射器，介于第一和第二半导体层之间的电流限制层， 第二半导体多层反射器，并且部分地包括氧化物区域，以及形成在由半导体层提供的涂覆表面上的绝缘层，该半导体层是第一半导体多层反射器的一部分，并且在去除表面氧化层之后露出。

公开(公告)号：US20110058587A1

公开(公告)日：2011-03-10

申请号：US12718457

申请日：2010-03-05

申请人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

发明人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

IPC分类号： H01S5/183 ,  H01S5/026

CPC分类号： H01S5/1835 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/3432

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器，其是第一导电类型并形成在所述基板上; 形成在所述第一半导体多层反射器上的有源区; 第二半导体多层反射器，其是第二导电类型并形成在有源区上; 位于第一和第二半导体多层反射器之间的电流变窄层，并且形成在与基板的主表面平行的表面内的长边方向和短边方向上具有各向异性的导电区域 ; 以及凸透镜构件，其形成在在所述第二多层反射体上发射光并且在与所述基板的所述主表面平行的表面内的长边方向和短边方向上具有各向异性的光束窗中。

公开(公告)号：US07346089B2

公开(公告)日：2008-03-18

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US08059689B2

公开(公告)日：2011-11-15

申请号：US12718457

申请日：2010-03-05

申请人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

发明人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

IPC分类号： H01S5/00

CPC分类号： H01S5/1835 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/3432

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器，其是第一导电类型并形成在所述基板上; 形成在所述第一半导体多层反射器上的有源区; 第二半导体多层反射器，其是第二导电类型并形成在有源区上; 位于第一和第二半导体多层反射器之间的电流变窄层，并且形成在与基板的主表面平行的表面内的长边方向和短边方向上具有各向异性的导电区域 ; 以及凸透镜构件，其形成在在所述第二多层反射体上发射光并且在与所述基板的所述主表面平行的表面内的长边方向和短边方向上具有各向异性的光束窗中。

公开(公告)号：US08023543B2

公开(公告)日：2011-09-20

申请号：US12542806

申请日：2009-08-18

申请人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

发明人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

IPC分类号： H01S5/042 ,  H01S5/183

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/185

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 形成在半导体衬底上并包括第一导电类型的半导体多层的下反射器; 上反射器，其形成在所述半导体衬底上并且包括第二导电类型的半导体多层; 位于下反射器和上反射器之间的有源区; 介于所述下反射器和所述上反射器之间并且具有在垂直于光轴的平面中具有各向异性形状的导电区域的电流限制层; 以及电极，其形成在上反射体上并具有通过该开口射出激光束的开口，该开口在各向异性形状的方向上具有不同的边缘形状。

公开(公告)号：US20060227835A1

公开(公告)日：2006-10-12

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US20050208688A1

公开(公告)日：2005-09-22

申请号：US11109753

申请日：2005-04-20

申请人： Hiromi Otoma ,  Jun Sakurai

发明人： Hiromi Otoma ,  Jun Sakurai

IPC分类号： H01S5/183 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

公开(公告)号：US06898226B2

公开(公告)日：2005-05-24

申请号：US10315152

申请日：2002-12-10

申请人： Hiromi Otoma ,  Jun Sakurai

发明人： Hiromi Otoma ,  Jun Sakurai

IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

摘要翻译： 表面发射半导体激光器包括衬底，形成在衬底上的第一半导体多层反射器，形成在第一半导体多层反射器上的有源区，形成在有源区上的第二半导体多层反射器，介于第一和第二半导体层之间的电流限制层， 第二半导体多层反射器，并且部分地包括氧化物区域，以及形成在由半导体层提供的涂覆表面上的绝缘层，该半导体层是第一半导体多层反射器的一部分，并且在去除表面氧化层之后露出。

公开(公告)号：US06661823B1

公开(公告)日：2003-12-09

申请号：US09718479

申请日：2000-11-24

申请人： Hiromi Otoma ,  Ryoji Ishii ,  Jun Sakurai ,  Yasuaki Miyamoto

发明人： Hiromi Otoma ,  Ryoji Ishii ,  Jun Sakurai ,  Yasuaki Miyamoto

IPC分类号： H01S500

CPC分类号： H01S5/0282 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/18394 ,  H01S2301/176

摘要： A vertical resonator type surface light emitting semiconductor laser device includes a semiconductor substrate having formed thereon a first semiconductor multi-layered film reflection mirror, an active layer, a second semiconductor multi-layered film reflection mirror, and a contact electrode having an opening for emitting laser light. The opening is covered with a protective film for preventing damage during fabrication after the contact electrode has been formed. Or, the protective film is provided on the second semiconductor multi-layered film reflection mirror so that the contact electrode is superimposed on the surface of the protective film, and the opening is formed on the protective layer. In this way, there is provided a vertical resonator type surface light emitting semiconductor laser device having high reliability, capable of stably producing laser light with a low resistance and a high output, which output does not decrease over time.

摘要翻译： 一种垂直谐振器型表面发光半导体激光器件，包括其上形成有第一半导体多层膜反射镜，有源层，第二半导体多层膜反射镜和具有用于发射的开口的接触电极的半导体基板 激光灯。 在形成接触电极之后，用保护膜覆盖开口以防止制造过程中的损坏。 或者，保护膜设置在第二半导体多层膜反射镜上，使得接触电极重叠在保护膜的表面上，并且在保护层上形成开口。 以这种方式，提供了一种具有高可靠性的垂直谐振器型表面发光半导体激光器件，其能够稳定地产生具有低电阻和高输出的激光，该输出随时间而不降低。