公开(公告)号：US07346089B2

公开(公告)日：2008-03-18

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US20060227835A1

公开(公告)日：2006-10-12

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US5990494A

公开(公告)日：1999-11-23

申请号：US827358

申请日：1997-03-27

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  F21S2/00 ,  F21V23/00 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/16 ,  H01L33/26 ,  H01L33/58 ,  H01L33/60 ,  H01S5/00 ,  H01S5/02 ,  H04N1/04 ,  H01L33/00

CPC分类号： B41J2/45

摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.

摘要翻译： 描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。 根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是 设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US07058104B2

公开(公告)日：2006-06-06

申请号：US10375110

申请日：2003-02-28

申请人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

发明人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01L2224/48463 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18344

摘要： A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.

公开(公告)号：US5533042A

公开(公告)日：1996-07-02

申请号：US317594

申请日：1994-10-03

申请人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

发明人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

IPC分类号： G11B7/09 ,  G11B7/125 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18 ,  G11B7/00

CPC分类号： G11B7/127 ,  G11B7/0901 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/06243 ,  H01S5/4031

摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。

公开(公告)号：US5491709A

公开(公告)日：1996-02-13

申请号：US106700

申请日：1993-08-16

申请人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

发明人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407

摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层​​低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5394425A

公开(公告)日：1995-02-28

申请号：US201342

申请日：1994-02-24

申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

公开(公告)号：US06650683B2

公开(公告)日：2003-11-18

申请号：US10228217

申请日：2002-08-27

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18388 ,  H01S2301/166 ,  H01S2301/18

摘要： The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

摘要翻译： 本发明提供一种表面发射半导体激光器，包括：半导体衬底，其上依次层叠有下层多层反射镜，有源层区域和上层多层反射镜，其与下层多层反射镜一起贡献 形成一个空腔; 上电极，其设置在所述上​​多层反射镜的上层上，并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分，其设置在所述上​​电极和所述下多层反射镜之间，并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径，使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值，并且抑制高阶横向模式，并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。