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    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING SYSTEM
    1.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING SYSTEM 有权
    磁阻效应元件，磁头和磁复制系统

    公开(公告)号：US20070230065A1

    公开(公告)日：2007-10-04

    申请号：US11760254

    申请日：2007-06-08

    申请人： Hiromi YUASA ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    发明人： Hiromi YUASA ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

    摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.

    摘要翻译： 一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到 磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分， 在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。 所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层 其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC RECORDING AND/OR REPRODUCING SYSTEM
    3.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC RECORDING AND/OR REPRODUCING SYSTEM 有权
    磁阻效应元件，磁头和磁记录和/或再现系统

    公开(公告)号：US20080158737A1

    公开(公告)日：2008-07-03

    申请号：US12042166

    申请日：2008-03-04

    申请人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

    发明人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

    摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

    摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在其中使感应电流在垂直于膜的平面的方向上流动的磁阻效应元件中，如果被钉扎层和自由层具有磁性层和非磁性层的层叠结构或堆叠结构 的磁性层和磁性层，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于旋转的散射效应 。

    METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM
    5.
    发明申请
    METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM 审中-公开
    制造磁记录介质的方法

    公开(公告)号：US20110049090A1

    公开(公告)日：2011-03-03

    申请号：US12872820

    申请日：2010-08-31

    申请人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

    发明人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

    IPC分类号： G11B5/84

    CPC分类号： G11B5/855

    摘要： According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an etching protection layer, and an adhesion layer on a substrate, applying a resist on the adhesion layer, transferring patterns of protrusions and recesses on the resist by imprinting to form a resist pattern, patterning the adhesion layer by using the resist pattern as a mask, patterning the etching protection layer by using the resist pattern as a mask, etching the magnetic recording layer by using patterns of the adhesion layer and the etching protection layer as masks to form patterns of protrusions and recesses of the magnetic recording layer and removing the pattern of the adhesion layer, stripping the pattern of the etching protection layer, and exposing the patterns of protrusions and recesses of the magnetic recording layer to a non-ionized reducing gas.

    摘要翻译： 根据一个实施例，制造磁记录介质的方法包括在基板上形成磁记录层，蚀刻保护层和粘合层，在粘合层上涂布抗蚀剂，在抗蚀剂上转印凹凸图案 通过印刷形成抗蚀剂图案，通过使用抗蚀剂图案作为掩模对粘合层进行图案化，通过使用抗蚀剂图案作为掩模对蚀刻保护层进行图案化，通过使用粘合层和蚀刻的图案蚀刻磁记录层 保护层作为掩模以形成磁记录层的突起和凹陷的图案并去除粘附层的图案，剥离蚀刻保护层的图案，以及将磁记录层的突起和凹陷的图案暴露于非磁性层 - 还原气体。

    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS
    6.
    发明申请
    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS 有权
    磁电元件，磁头组件和磁记录/再现装置

    公开(公告)号：US20110228427A1

    公开(公告)日：2011-09-22

    申请号：US12879376

    申请日：2010-09-10

    申请人： Hiromi YUASA ,  Shuichi Murakami ,  Yoshihiko Fuji ,  Hideaki Fukuzawa

    发明人： Hiromi YUASA ,  Shuichi Murakami ,  Yoshihiko Fuji ,  Hideaki Fukuzawa

    IPC分类号： G11B5/33 ,  G11B5/48

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G11B5/486 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/1936 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.

    摘要翻译： 磁阻元件包括第一铁磁层，第二铁磁层，非磁性层，第一金属层，第二金属层，第一电极和第二电极。 非磁性层设置在第一铁磁层和第二铁磁层之间。 第一金属层包括Au，并且设置成使得第一铁磁层夹在非磁性层和第一金属层之间。 第二金属层包括CuNi合金，并且被设置成使得第一金属层夹在第一铁磁层和第二金属层之间。 此外，第一铁磁层和第二铁磁层中的任一个的磁化在一个方向上固定。 另一个的磁化响应于外部场是可变的。 第一铁磁层和第二铁磁层中的至少一个包括半金属。