摘要:
A novel self-align type method of making an FET with a very short gate length and a good high frequency characteristic, and a low noise characteristic, the method comprising the steps of:forming on a silicon epitaxial layer (13) of n-type conductivity a doped oxide film (14) containing boron as an impurity to give p-type conductivity,forming a mask (15a, 16a) containing Si.sub.3 N.sub.4 film and having a width larger than that of a gate region (19) to be formed on said n-type epitaxial layer (13),etching said doped oxide film (14) by utilizing said mask (15a, 16a) as an etching mask to expose surface of said silicon crystal layer (13) in a manner that sides of the part of said doped oxide film (14) covered by said mask (15, 16a) are side-etched by a predetermined width,ion-implanting an impurity of said first conductivity type into said n-type epitaxial layer (13) by utilizing said mask as implanting mask, andcarrying out a heat treating thereby diffusing said second conductivity type impurity from said doped oxide film (14) retained only under said mask into said n-type epitaxial layer (13) to form said gate region (19) and driving said ion-implanted first conductivity type impurity into said silicon crystal layer (13) to form a source region (17) and a drain region (18).
摘要翻译:一种制造具有非常短的栅极长度和良好的高频特性以及低噪声特性的FET的新型自对准型方法,该方法包括以下步骤:在n型硅外延层(13)上形成 电导率为含有硼作为杂质的掺杂氧化物膜(14)以产生p型导电性,形成包含Si 3 N 4膜的掩模(15a,16a),其宽度大于所述栅极区域(19)的宽度 通过利用所述掩模(15a,16a)作为蚀刻掩模蚀刻所述掺杂氧化物膜(14),以使得所述硅晶体层(13)的所述一部分的侧面 将由所述掩模(15,16a)覆盖的所述掺杂氧化物膜(14)以预定宽度进行侧蚀刻,通过利用所述掩模将所述第一导电类型的杂质离子注入所述n型外延层(13) 植入掩模,并进行热处理,从而扩散所述第二导电型不动杆 将所述掺杂氧化物膜(14)保留在所述掩模内的所述n型外延层(13)中以形成所述栅极区域(19)并将所述离子注入的第一导电类型杂质驱动到所述硅晶体层(13)中, 以形成源极区(17)和漏极区(18)。
摘要:
In the process of forming a thermal oxide film or heat treatment of an oxide film in making a semiconductor device comprising a compound semiconductor of arsenic, the semiconductor is handled in an atmosphere containing arsenic oxide vapor in order to prevent evaporation of the arsenic tri-oxide in the thermal oxidation film or the oxide film under heat treatment, thereby to form a thermal oxide film having good chemical stability and good electrical characteristics, or to improve the oxide film so as to have good chemical stability and good electrical characteristics.
摘要:
A negative resistance device formed by series-connection of a complementary pair of insulated gate type FETs (field effect transistors), the source of the FETs being connected to each other and the gates of each of the FETs being connected to the respective drain of the other FET at least one FET having a double layered gate insulation film under the gate electrode, thereby forming a non-volatile memory element. The negative resistance device acquires or loses negative resistance characteristics by responding to signals to the gates, thereby memorizing the signals and resulting in a highly efficient memory which requires little power in writing-in, erasing and memory-holding.
摘要:
A very narrow current injection region (16") is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16") and a shallower part (16'), and the deeper part (16") can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).
摘要:
The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x . The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.
摘要翻译:本发明提供一种用于半导体器件的化学蚀刻方法,其包括形成具有表面(100)的第一层Ga 1-x Al x As(0 的方向化学蚀刻所述层的步骤。 第二层的蚀刻面的倾斜角取决于第二层的摩尔分数y,第一层的蚀刻面的倾斜角取决于第二层的摩尔分数y和第一层的摩尔分数x 层。 这些事实在本发明中最好地利用,使得第一层的蚀刻轮廓可以具有期望的倾斜角。 通过利用这种化学蚀刻方法,可以通过化学蚀刻具有垂直于结的平坦腔面的半导体激光器来制造; 也可以提供具有侧壁垂直的槽的内条型半导体激光器。
摘要:
In a laser of such type that the distribution of the effective refractive index varies in a direction which is along the face of its active layer and perpendicular to the direction of the laser light transmission, thereby defining the active region to be between a pair of refractive index changing zones, the refractive indexes of a pair of end surfaces of a laser resonator (i.e. the active region) is made smaller than the intrinsic refractive indexes of the cleavage face of the active layer.
摘要:
An improvement in optical remote-control apparatus which comprises a light-beam transmitter and a light-receiver, wherein the improvement is that a light-scattering (i.e., light-diffusing) plate having a suitable area is provided in front of the light-receiver, so that the aiming tolerance of the light-beam transmitter becomes broader, enabling easy remote-control.