公开(公告)号：US08384236B2

公开(公告)日：2013-02-26

申请号：US12659526

申请日：2010-03-11

申请人： Hiroo Fuma ,  Takaji Umeno ,  Kota Manabe

发明人： Hiroo Fuma ,  Takaji Umeno ,  Kota Manabe

IPC分类号： B60L1/00

CPC分类号： H01M10/46 ,  B60L1/006 ,  B60L11/123 ,  B60L11/1803 ,  B60L11/1811 ,  B60L11/1812 ,  B60L11/1814 ,  B60L11/1816 ,  B60L11/1818 ,  B60L11/1842 ,  B60L15/007 ,  B60L2220/54 ,  H02M1/10 ,  H02M3/1584 ,  Y02E60/721 ,  Y02T10/6217 ,  Y02T10/641 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T10/7077 ,  Y02T90/121 ,  Y02T90/127 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163 ,  Y04S10/126

摘要： An object is to miniaturize device size in a vehicle mounted converter. The vehicle mounted converter includes a plurality of inductors, a switching unit for switching current path, an external power acquisition unit for acquiring alternating current power from a power generation source provided separately from the mounted vehicle, and a switching means for switching a circuit connection state to a connection state of either a boost connection state for connecting one end of the inductors to a path to a battery for vehicle drive power supply and connecting the switching unit to the other end of the inductors, or a charging connection state for connecting one end of one of the plurality of inductors to the path to the battery, disconnecting one end of the remaining inductors from the path to the battery and connecting to the external power acquisition unit, and connecting the other end of the inductors to the switching unit.

摘要翻译： 目的是在车载转换器中使设备尺寸小型化。 车载转换器包括多个电感器，用于切换电流通路的开关单元，用于从与安装的车辆分开设置的发电源获取交流电力的外部电力获取单元，以及用于切换电路连接状态的开关装置 将用于将电感器的一端连接到用于车辆驱动电源的电池的路径的升压连接状态的连接状态，以及将开关单元连接到电感器的另一端，或者连接一端的充电连接状态 将多个电感器中的一个电感器连接到电池的路径，将剩余电感器的一端从与电池的路径断开并连接到外部电力获取单元，并将电感器的另一端连接到开关单元。

公开(公告)号：US20100237694A1

公开(公告)日：2010-09-23

申请号：US12659526

申请日：2010-03-11

申请人： Hiroo Fuma ,  Takaji Umeno ,  Kota Manabe

发明人： Hiroo Fuma ,  Takaji Umeno ,  Kota Manabe

IPC分类号： B60L1/00

CPC分类号： H01M10/46 ,  B60L1/006 ,  B60L11/123 ,  B60L11/1803 ,  B60L11/1811 ,  B60L11/1812 ,  B60L11/1814 ,  B60L11/1816 ,  B60L11/1818 ,  B60L11/1842 ,  B60L15/007 ,  B60L2220/54 ,  H02M1/10 ,  H02M3/1584 ,  Y02E60/721 ,  Y02T10/6217 ,  Y02T10/641 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T10/7077 ,  Y02T90/121 ,  Y02T90/127 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163 ,  Y04S10/126

摘要： An object is to miniaturize device size in a vehicle mounted converter. The vehicle mounted converter includes a plurality of inductors, a switching unit for switching current path, an external power acquisition unit for acquiring alternating current power from a power generation source provided separately from the mounted vehicle, and a switching means for switching a circuit connection state to a connection state of either a boost connection state for connecting one end of the inductors to a path to a battery for vehicle drive power supply and connecting the switching unit to the other end of the inductors, or a charging connection state for connecting one end of one of the plurality of inductors to the path to the battery, disconnecting one end of the remaining inductors from the path to the battery and connecting to the external power acquisition unit, and connecting the other end of the inductors to the switching unit.

摘要翻译： 目的是在车载转换器中使设备尺寸小型化。 车载转换器包括多个电感器，用于切换电流通路的开关单元，用于从与安装的车辆分开设置的发电源获取交流电力的外部电力获取单元，以及用于切换电路连接状态的开关装置 将用于将电感器的一端连接到用于车辆驱动电源的电池的路径的升压连接状态的连接状态，以及将开关单元连接到电感器的另一端，或者连接一端的充电连接状态 将多个电感器中的一个电感器连接到电池的路径，将剩余电感器的一端从与电池的路径断开并连接到外部电力获取单元，并将电感器的另一端连接到开关单元。

公开(公告)号：US20110193408A1

公开(公告)日：2011-08-11

申请号：US13125247

申请日：2009-10-21

申请人： Hiroo Fuma ,  Yuji Nishibe ,  Kota Manabe ,  Nobuyuki Kitamura

发明人： Hiroo Fuma ,  Yuji Nishibe ,  Kota Manabe ,  Nobuyuki Kitamura

IPC分类号： B60L1/00

CPC分类号： H02M3/1584

摘要： An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.

摘要翻译： 目的在于使用在车载升压转换器中的升压线圈小型化。 在包括多个升压线圈的车载多相转换器的设计方法中，以及用于通过切换流过每个升压线圈以提供输出电压的电流来产生每个升压线圈处的感应电动势的开关电路， 电压和在每个升压线圈处产生的感应电动势到车辆驱动电路，耦合因子表示多个升压线圈中的一个中的感应电动势对另一个升压线圈的端子之间的电压有贡献的程度， 每个增压线圈的耦合因子和电流纹波分量之间的关系的基础。

公开(公告)号：US08610414B2

公开(公告)日：2013-12-17

申请号：US13125247

申请日：2009-10-21

申请人： Hiroo Fuma ,  Yuji Nishibe ,  Kota Manabe ,  Nobuyuki Kitamura

发明人： Hiroo Fuma ,  Yuji Nishibe ,  Kota Manabe ,  Nobuyuki Kitamura

IPC分类号： G05F1/40

CPC分类号： H02M3/1584

摘要： An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.

摘要翻译： 目的在于使用在车载升压转换器中的升压线圈小型化。 在包括多个升压线圈的车载多相转换器的设计方法中，以及用于通过切换流过每个升压线圈以提供输出电压的电流来产生每个升压线圈处的感应电动势的开关电路， 电压和在每个升压线圈处产生的感应电动势到车辆驱动电路，耦合因子表示多个升压线圈中的一个中的感应电动势对另一个升压线圈的端子之间的电压有贡献的程度， 每个增压线圈的耦合因子和电流纹波分量之间的关系的基础。

公开(公告)号：US6133587A

公开(公告)日：2000-10-17

申请号：US23280

申请日：1998-02-13

申请人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

发明人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/0696

摘要： A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in the p-type silicon carbide semiconductor layer 3. A trench 7 is formed in a predetermined region in the n.sup.+ -type source region 5, which trench 7 passes through the n.sup.+ -type source region 5 and the p-type silicon carbide semiconductor layer 3, reaching the n.sup.- -type silicon carbide semiconductor layer 2. The trench 7 has side walls 7a perpendicular to the surface of the semiconductor substrate 4 and a bottom side 7b parallel to the surface of the semiconductor substrate 4. The hexagonal region surrounded by the side walls 7a of the trench 7 is an island semiconductor region 12. A high-reliability gate insulating film 8 is obtained by forming a gate insulating layer on the side walls 7a which surround the island semiconductor region 12.

摘要翻译： n型源极区5形成在半导体衬底4的p型碳化硅半导体层3的表层部分的预定区域上。低电阻p型碳化硅区6形成在 在p型碳化硅半导体层3中的表层部分的预定区域。沟槽7形成在n +型源极区域5中的预定区域中，沟槽7通过n +型源极区域5，并且 p型碳化硅半导体层3，到达n型碳化硅半导体层2.沟槽7具有垂直于半导体衬底4的表面的侧壁7a和平行于半导体衬底的表面的底侧7b 由沟槽7的侧壁7a包围的六边形区域是岛状半导体区域12.通过在侧壁7a上形成栅极绝缘层，形成高可靠性栅极绝缘膜8， 岛半导体区域12。

公开(公告)号：US20070090707A1

公开(公告)日：2007-04-26

申请号：US11583073

申请日：2006-10-19

申请人： Kazunari Moriya ,  Yukio Inaguma ,  Hiroo Fuma

发明人： Kazunari Moriya ,  Yukio Inaguma ,  Hiroo Fuma

IPC分类号： H02K49/00 ,  H02K47/00 ,  H02P15/00

CPC分类号： H02K16/02 ,  B60K6/26 ,  B60K6/445 ,  B60K6/448 ,  B60K6/48 ,  B60K2006/262 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/20 ,  B60L15/2009 ,  B60L2210/40 ,  B60L2220/12 ,  B60L2220/14 ,  B60L2220/52 ,  B60L2240/423 ,  H02K7/006 ,  H02K16/00 ,  H02P2207/03 ,  Y02T10/6217 ,  Y02T10/6221 ,  Y02T10/6239 ,  Y02T10/6243 ,  Y02T10/641 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  Y02T10/7275

摘要： An induction machine includes a stator provided with stator windings and a first rotor provided with first rotor windings, and generates an induction current in one of the stator windings and the first rotor windings by a rotating magnetic field generated in the other of the stator windings and the first rotor windings. A synchronous machine includes a second rotor which is provided with second rotor windings connected to the first rotor windings and coupled to the first rotor, and a third rotor which is provided with permanent magnets and rotatable independent of the second rotor, and a torque acts between the second rotor and the third rotor due to the interaction between the rotating magnetic field generated in the second rotor windings and the field flux generated in the permanent magnets.

摘要翻译： 感应电动机包括定子绕组的定子和设置有第一转子绕组的第一转子，并且通过在另一个定子绕组中产生的旋转磁场在定子绕组和第一转子绕组中的一个中产生感应电流， 第一转子绕组。 同步电机包括第二转子，其具有连接到第一转子绕组并且耦合到第一转子的第二转子绕组，以及设置有永磁体并且独立于第二转子旋转的第三转子，并且扭矩作用在 第二转子和第三转子由于在第二转子绕组中产生的旋转磁场与在永磁体中产生的磁场通量之间的相互作用而产生。

公开(公告)号：US5744826A

公开(公告)日：1998-04-28

申请号：US785952

申请日：1997-01-22

申请人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata

发明人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/0696 ,  H01L29/1608 ,  Y10S438/931

摘要： A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately in the (0001) carbon face. An n.sup.+ -type source region 5 is formed in the surface layer of the semiconductor layer 3, and a trench 7 runs from the main surface through the region 5 and the semiconductor layer 3 reaching to the semiconductor layer 2, and extending approximately in the �1120! direction. An n-type silicon carbide semiconductor thin-film layer 8 is provided on the region 5, the semiconductor layer 3 and the semiconductor layer 2 on the side walls of the trench 7, while a gate electrode layer 10 is formed on the inner side of a gate insulating film 9, a source electrode layer 12 is formed on the surface of the semiconductor region 5, and a drain electrode layer 13 is formed on the surface of the n.sup.+ -type substrate 1.

摘要翻译： 由n +型基板1，n型碳化硅半导体层2和p型碳化硅半导体层3构成的半导体基板4由六面晶体型单晶碳化硅制成，主表面具有 大概在（000 + E，ovs 1 + EE）碳面的平面取向。 在半导体层3的表面层中形成n +型源极区域5，并且沟槽7从主表面延伸穿过半导体层2的区域5和半导体层3，并且大致在[ 11 + E，ovs 2 + EE 0]方向。 在沟槽7的侧壁上的区域5，半导体层3和半导体层2上设置n型碳化硅半导体薄膜层8，而在栅极电极层10的内侧形成有栅电极层10 栅极绝缘膜9，在半导体区域5的表面上形成源电极层12，在n +型衬底1的表面上形成漏电极层13。

公开(公告)号：US07847604B2

公开(公告)日：2010-12-07

申请号：US12442029

申请日：2008-01-17

申请人： Hiroo Fuma ,  Hiromichi Kuno ,  Satoshi Hirose ,  Naoyoshi Takamatsu

发明人： Hiroo Fuma ,  Hiromichi Kuno ,  Satoshi Hirose ,  Naoyoshi Takamatsu

IPC分类号： H03K3/00

CPC分类号： H02M1/08 ,  H03K17/0828 ,  H03K17/165 ,  H03K17/18 ,  H03K2217/0036

摘要： Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.

摘要翻译： 提供一种驱动电路，其抑制在切换功率半导体元件时的浪涌电压并降低开关损耗。 诸如IGBT和要配对的另一元件（20）的元件（10）连接，元件（10）由驱动器（22）驱动，栅极电压由控制电路（24）控制。 当功率半导体元件关断时，比较器26检测元件20的电压（Vak）为规定电压，控制电路24将栅极电阻从低电阻切换到高电阻，抑制 浪涌电压，开关损耗减小。 当功率半导体元件导通时，检测到启动电压（Vak），并且控制电路（24）在规定时间之后将栅极电阻从高电阻切换到低电阻以抑制浪涌电压，并且切换 损失减少。

公开(公告)号：US5976936A

公开(公告)日：1999-11-02

申请号：US893221

申请日：1997-07-15

申请人： Takeshi Miyajima ,  Norihito Tokura ,  Kazukuni Hara ,  Hiroo Fuma

发明人： Takeshi Miyajima ,  Norihito Tokura ,  Kazukuni Hara ,  Hiroo Fuma

IPC分类号： H01L21/04 ,  H01L29/08 ,  H01L29/24 ,  H01L29/78 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/66068 ,  H01L29/7828 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/4236 ,  Y10S438/981

摘要： A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9.

摘要翻译： 提供了具有高阻断电压，低损耗和低阈值电压的碳化硅半导体器件。 n +型碳化硅半导体衬底1，n型碳化硅半导体衬底2和p型碳化硅半导体层3相互层叠在一起。 在p型碳化硅半导体层3的表面的预定区域中形成n +型源极区6，并且形成沟槽9，以延伸穿过n +型源极区6和p型碳化硅半导体层 在n型碳化硅半导体层2的表面上延伸设置有薄膜半导体层（n型或p型）11a，在n +型源极区6，p型碳化硅半导体层3的表面上， n型碳化硅半导体层2在沟槽9的侧面。

公开(公告)号：US20100019808A1

公开(公告)日：2010-01-28

申请号：US12442029

申请日：2008-01-17

申请人： Hiroo Fuma ,  Hiromichi Kuno ,  Satoshi Hirose ,  Naoyoshi Takamatsu

发明人： Hiroo Fuma ,  Hiromichi Kuno ,  Satoshi Hirose ,  Naoyoshi Takamatsu

IPC分类号： G05F1/10

CPC分类号： H02M1/08 ,  H03K17/0828 ,  H03K17/165 ,  H03K17/18 ,  H03K2217/0036

摘要： Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.

摘要翻译： 提供一种驱动电路，其抑制在切换功率半导体元件时的浪涌电压并降低开关损耗。 诸如IGBT和要配对的另一元件（20）的元件（10）连接，元件（10）由驱动器（22）驱动，栅极电压由控制电路（24）控制。 当功率半导体元件关断时，比较器26检测元件20的电压（Vak）为规定电压，控制电路24将栅极电阻从低电阻切换到高电阻，抑制 浪涌电压，开关损耗减小。 当功率半导体元件导通时，检测到启动电压（Vak），并且控制电路（24）在规定时间之后将栅极电阻从高电阻切换到低电阻以抑制浪涌电压，并且切换 损失减少。