公开(公告)号：US07361450B2

公开(公告)日：2008-04-22

申请号：US10505600

申请日：2003-02-25

申请人： Hiroo Koyanagi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Minoru Yokoshima

发明人： Hiroo Koyanagi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Minoru Yokoshima

IPC分类号： G03C1/73 ,  G03F7/027 ,  G03F7/09 ,  G03F7/20

CPC分类号： C09D167/07 ,  C08F290/06 ,  C08F290/061 ,  C08G63/668 ,  C08G63/91 ,  C08L67/07 ,  G02B6/138 ,  Y10S430/109 ,  Y10S430/117 ,  Y10S525/921

摘要： A photosensitive resin (A) consisting substantially of a product obtained by reacting a polyester (c) which is a reaction product of a polyol (a) with a tetrabasic acid dianhydride (b) with a compound (d) having an ethylenically unsaturated group and an epoxy group in the molecule; an alkali-soluble photosensitive resin (AA) obtained by reacting the photosensitive resin (A) with a di- or tri-basic acid mono-anhydride (e); photosensitive resin compositions prepared by incorporating the above photosensitive resin with a diluent (XX), a crosslinking agent (B) and/or a photopolymerization initiator (C); products of curing of the compositions; and articles equipped with these products. The resins and resin compositions give cured articles which are suitable for the formation of optical waveguides and excellent in processability, transparency, developability, close adhesion, resistance to soldering heat, and so on.

摘要翻译： 基本上由通过使多元醇（a）与四元酸二酐（b）的反应产物的聚酯（c）与具有烯键式不饱和基团的化合物（d）反应得到的产物的光敏树脂（A）和 分子中的环氧基; 通过使感光性树脂（A）与二 - 或三 - 碱性单酸酐（e）反应得到的碱溶性感光性树脂（AA） 通过将上述感光性树脂与稀释剂（XX），交联剂（B）和/或光聚合引发剂（C）并入而制备的感光性树脂组合物; 组合物的固化产物; 和配备这些产品的物品。 树脂和树脂组合物提供适合于形成光波导的固化物，加工性，透明性，显影性，密合性，耐焊接性等优异。

公开(公告)号：US20050153230A1

公开(公告)日：2005-07-14

申请号：US10505600

申请日：2003-02-25

申请人： Hiroo Koyanagi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Minoru Yokoshima

发明人： Hiroo Koyanagi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Minoru Yokoshima

IPC分类号： C08F290/06 ,  C08G63/20 ,  C08G63/668 ,  C08G63/91 ,  C08L67/06 ,  C08L67/07 ,  C09D167/07 ,  G02B6/138 ,  G03C1/76

CPC分类号： C09D167/07 ,  C08F290/06 ,  C08F290/061 ,  C08G63/668 ,  C08G63/91 ,  C08L67/07 ,  G02B6/138 ,  Y10S430/109 ,  Y10S430/117 ,  Y10S525/921

摘要： A photosensitive resin (A) consisting substantially of a product obtained by reacting a polyester (c) which is a reaction product of a polyol (a) with a tetrabasic acid dianhydride (b) with a compound (d) having an ethylenically unsaturated group and an epoxy group in the molecule; an alkali-soluble photosensitive resin (AA) obtained by reacting the photosensitive resin (A) with a di- or tri-basic acid mono-anhydride (e); photosensitive resin compositions prepared by incorporating the above photosensitive resin with a diluent (XX), a crosslinking agent (B) and/or a photopolymerization initiator (C); products of curing of the compositions; and articles equipped with these products. The resins and resin compositions give cured articles which are suitable for the formation of optical waveguides and excellent in processability, transparency, developability, close adhesion, resistance to soldering heat, and so on.

摘要翻译： 基本上由通过使多元醇（a）与四元酸二酐（b）的反应产物的聚酯（c）与具有烯属不饱和基团的化合物（d）反应得到的产物的光敏树脂（A）和 分子中的环氧基; 通过使感光性树脂（A）与二 - 或三 - 碱性单酸酐（e）反应得到的碱溶性感光性树脂（AA） 通过将上述感光性树脂与稀释剂（XX），交联剂（B）和/或光聚合引发剂（C）并入而制备的感光性树脂组合物; 组合物的固化产物; 和配备这些产品的物品。 树脂和树脂组合物提供适合于形成光波导的固化物，加工性，透明性，显影性，密合性，耐焊接性等优异。

公开(公告)号：US20080076900A1

公开(公告)日：2008-03-27

申请号：US11662014

申请日：2005-09-29

申请人： Katsuhiko Oshimi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Naofusa Miyagawa

发明人： Katsuhiko Oshimi ,  Koji Nakayama ,  Chie Umeyama ,  Yoshihiro Kawada ,  Naofusa Miyagawa

IPC分类号： C08G59/18

CPC分类号： C08G59/3254 ,  C08L83/06

摘要： Disclosed is an epoxy resin composition for optical semiconductor encapsulation which contains an epoxy resin obtained by co-hydrolysis/condensation of alkoxy silicon compounds expressed as XSi(R1)n(OR2)3-n (wherein X represents an organic group having an epoxy group; R1 represents a substituted or unsubstituted alkyl group having 1-10 carbon atoms, a substituted or unsubstituted aryl group or a substituted or unsubstituted alkenyl group having 2-5 carbon atoms; R2 represents an alkyl group having 1-4 carbon atoms; n represents an integer of 0-2; and when more than one R1 are included, they may be the same as or different from each other) or co-hydrolysis/condensation of such an alkoxy silicon compound and another specific alkoxy silicon compound.

摘要翻译： 公开了一种用于光学半导体封装的环氧树脂组合物，其包含通过以XSi（R 1）N（OR）表示的烷氧基硅化合物的共水解/缩合获得的环氧树脂 3-n（其中X表示具有环氧基的有机基团; R 1表示取代或未取代的具有1- 10个碳原子，取代或未取代的芳基或具有2-5个碳原子的取代或未取代的烯基; R 2表示具有1-4个碳原子的烷基; n表示0的整数 -2;当包含多于一个R 1'时，它们可以彼此相同或不同）或这种烷氧基硅化合物与另一种特定烷氧基硅化合物的共水解/缩合 。

公开(公告)号：US20140045680A1

公开(公告)日：2014-02-13

申请号：US14112507

申请日：2012-04-17

申请人： Koji Nakayama ,  Yoshihiko Yokoyama

发明人： Koji Nakayama ,  Yoshihiko Yokoyama

IPC分类号： B01J27/185 ,  B01J23/755

CPC分类号： B01J27/1853 ,  B01J21/066 ,  B01J23/42 ,  B01J23/44 ,  B01J23/755 ,  B01J35/06 ,  B22F1/0025 ,  B22F9/002 ,  B22F9/082 ,  B22F2999/00 ,  B82Y30/00 ,  C22C1/002 ,  C22C1/03 ,  C22C1/0433 ,  C22C1/0458 ,  C22C1/0466 ,  C22C28/00 ,  C22C33/003 ,  C22C33/02 ,  C22C38/002 ,  C22C45/00 ,  C22C45/003 ,  C22C45/02 ,  C22C45/04 ,  C22C45/10 ,  B22F2202/03

摘要： Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.

摘要翻译： 提供了容易制造大体积的具有极小直径的金属玻璃纳米线的方法。 该金属玻璃纳米线的制造方法的特征在于，熔融金属玻璃或其母合金以过冷却状态进行气体雾化。

公开(公告)号：US08178949B2

公开(公告)日：2012-05-15

申请号：US12525198

申请日：2008-01-31

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L21/331

CPC分类号： H01L29/866 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66106 ,  H01L29/8613

摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

摘要翻译： 双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。 双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层 第二导电类型，其中基板和导电层按顺序层压。

公开(公告)号：US08154026B2

公开(公告)日：2012-04-10

申请号：US12097019

申请日：2006-12-13

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Tomonori Nakamura

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Tomonori Nakamura

IPC分类号： H01L29/15

CPC分类号： H01L29/1604 ,  H01L21/0465 ,  H01L21/047 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8613

摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.

摘要翻译： 在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成 防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。 此外，提高了反向偏置中的耐受电压的特性。 在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。 在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。 在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上 。 在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

公开(公告)号：US08093599B2

公开(公告)日：2012-01-10

申请号：US12597121

申请日：2008-04-25

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866

CPC分类号： H01L29/866 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/66106

摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

摘要翻译： 一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层 形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层 导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

公开(公告)号：US08079698B2

公开(公告)日：2011-12-20

申请号：US11782725

申请日：2007-07-25

申请人： Koji Nakayama

发明人： Koji Nakayama

IPC分类号： B41J2/01

CPC分类号： B41J29/17 ,  B41J11/0015 ,  B41J11/007

摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.

摘要翻译： 公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。 馈送装置沿着通过去除区域的馈送路径馈送记录介质。 反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。 在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。 喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。 喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。

公开(公告)号：US07960737B2

公开(公告)日：2011-06-14

申请号：US12801679

申请日：2010-06-21

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

公开(公告)号：US07960257B2

公开(公告)日：2011-06-14

申请号：US12801680

申请日：2010-06-21

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

摘要翻译： 为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在 生长表面，其由具有偏角角度的硅碳化物半导体的晶体的表面给出; （000-1）碳表面8度，以每小时薄膜增加率为10μm/小时的膜生长速率，比常规对应物高3倍以上。 硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。