公开(公告)号：US4261209A

公开(公告)日：1981-04-14

申请号：US14373

申请日：1979-02-23

申请人： Hiroshi Hatsuno ,  Masaki Saito ,  Mitsuo Fukushima ,  Shinji Ogawa

发明人： Hiroshi Hatsuno ,  Masaki Saito ,  Mitsuo Fukushima ,  Shinji Ogawa

IPC分类号： F02M65/00 ,  G01L9/00 ,  G01M15/00

CPC分类号： G01L19/12 ,  G01L9/12 ,  F02D2041/1432

摘要： A sensor (16) is connected to a high pressure line (13) in a fuel injection system for an internal combustion engine. The sensor (16) produces an output current which is proportional to the pressure in the line (13). The current is converted into a corresponding voltage and a displayed a voltmeter (21). An alarm is produced when the voltage exceeds a predetermined value or range. A second voltmeter (23) is energized to display the voltage when the alarm is produced.

摘要翻译： 传感器（16）连接到用于内燃机的燃料喷射系统中的高压管线（13）。 传感器（16）产生与线路（13）中的压力成比例的输出电流。 电流转换成相应的电压，并显示电压表（21）。 当电压超过预定值或范围时产生报警。 第二个电压表（23）被激励，以在报警产生时显示电压。

公开(公告)号：US08344575B2

公开(公告)日：2013-01-01

申请号：US12812701

申请日：2009-07-10

申请人： Kiyotaka Koga ,  Masaki Saito

发明人： Kiyotaka Koga ,  Masaki Saito

IPC分类号： H02K3/28

CPC分类号： H02K15/085 ,  H02K3/12 ,  H02K15/0031 ,  H02K15/0421 ,  H02K15/0478 ,  H02K15/064 ,  H02K15/067 ,  Y10T29/49009

摘要： The disclosed embodiments relate to a stator and manufacturing method of the stator in which the coil conducts of the stator have three phases (a U phase, V phase, and W phase), which are arranged in a distributed winding form in a plurality of slots of a stator core. The coil conductors of the three phases each include a slot conductor portion that is disposed in the slot, and a pair of coil end conductor portions disposed on both axial sides of the stator core to connect the slot conductor portions disposed in the different slots. The stator also includes a first side transition wire portion in each phase that is disposed further toward a radial inner side than an inner peripheral end surface of a tooth provided on each circumferential side of the slot so as to overlap another first side transition wire portions in the axial direction.

摘要翻译： 所公开的实施例涉及定子的定子和制造方法，其中定子的线圈导通具有三相（U相，V相和W相），它们以分布式绕组形式布置在多个槽中 的定子铁芯。 三相的线圈导体各自包括设置在槽中的槽导体部分和一对线圈端导体部分，其设置在定子芯的两个轴向两侧，以连接设置在不同槽中的槽导体部分。 定子还包括每相中的第一侧过渡金属线部分，该第一侧过渡金属线部分设置成比设置在槽的每个周向侧上的齿的内周端面更靠近径向内侧，以便与另一个第一侧过渡金属线部分重叠 轴向。

公开(公告)号：USD639017S1

公开(公告)日：2011-06-07

申请号：US29347325

申请日：2009-12-07

申请人： Masaki Saito ,  Hiromi Inui ,  Shinji Oda

设计人： Masaki Saito ,  Hiromi Inui ,  Shinji Oda

公开(公告)号：US07871878B2

公开(公告)日：2011-01-18

申请号：US12425476

申请日：2009-04-17

申请人： Junli Wang ,  Toyotaka Kataoka ,  Masaki Saito

发明人： Junli Wang ,  Toyotaka Kataoka ,  Masaki Saito

IPC分类号： H01L21/8238 ,  H01L27/118

CPC分类号： H01L27/1203 ,  H01L21/2007 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/7842 ,  H01L29/78684

摘要： A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.

摘要翻译： 一种制造半导体器件的方法，其包括在衬底上的第一和第二器件区域。 该方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上层压具有不同于衬底表面的平面取向的第一半导体层，并通过从绝缘层上除去绝缘层和第一半导体层而暴露衬底 第二设备区域。 具有与衬底相同的平面取向并由应变层制成的第二半导体层通过在第二器件区域中暴露的衬底上外延生长而形成。

公开(公告)号：US20090221134A1

公开(公告)日：2009-09-03

申请号：US12425476

申请日：2009-04-17

申请人： Junli Wang ,  Toyotaka Kataoka ,  Masaki Saito

发明人： Junli Wang ,  Toyotaka Kataoka ,  Masaki Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/1203 ,  H01L21/2007 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/7842 ,  H01L29/78684

摘要： A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.

摘要翻译： 一种制造半导体器件的方法，其包括在衬底上的第一和第二器件区域。 该方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上层压具有不同于衬底表面的平面取向的第一半导体层，并通过从绝缘层上除去绝缘层和第一半导体层而暴露衬底 第二设备区域。 具有与衬底相同的平面取向并由应变层制成的第二半导体层通过在第二器件区域中暴露的衬底上外延生长而形成。

公开(公告)号：US20080227172A1

公开(公告)日：2008-09-18

申请号：US11771606

申请日：2007-06-29

申请人： Masaki Saito

发明人： Masaki Saito

IPC分类号： C12N9/10

CPC分类号： C12N9/1081

摘要： A sialyltransferase having the following physico-chemical properties: (1) Activity; transfers sialic acid from a sialic acid donor selectively to a 3-hydroxyl group of a galactose residue contained in lactosylceramide as a sialic acid acceptor to produce ganglioside GM3; (2) Optimal reaction pH: 6.0 to 7.0; and (3) Inhibition and activation: the activity increases at least 1.5 times with 10 mM of Mn2+ as compared with the case in the absence thereof.

摘要翻译： 具有以下物理化学性质的唾液酸转移酶：（1）活性; 将唾液酸供体选择性地将唾液酸转移到作为唾液酸受体的乳糖神经酰胺中含有的半乳糖残基的3-羟基，以产生神经节苷脂G M3; （2）最佳反应pH：6.0〜7.0; 和（3）抑制和活化：与没有其的情况相比，活性增加至少1.5倍，10mM的Mn 2+ 2 +。

公开(公告)号：US20080122151A1

公开(公告)日：2008-05-29

申请号：US11723306

申请日：2007-03-19

申请人： Masashi Ito ,  Hisanobu Niwa ,  Masaki Saito

发明人： Masashi Ito ,  Hisanobu Niwa ,  Masaki Saito

IPC分类号： F16C32/06

CPC分类号： F16C32/06

摘要： A rocking substrate 31 provided with a porous unit 41 is supported by a platform 21 by means of a spherical bearing. Furthermore, air is provided between the platform 21 and the rocking substrate 31 to allow the rocking substrate 31 and the porous unit 41 to rock along a spherical surface. This rocking allows the top surface 12a of an improved levitation unit 12 to tilt freely. When a wavy glass substrate is placed on the levitation device, the top surface 12a of the improved levitation unit 12 tilts, tracing the tilt of the substrate. Jetting air out in this state levitates the substrate, with its top surface 12a in the horizontal state, and allows the levitational force to be reliably applied to the substrate.

摘要翻译： 设置有多孔单元41的摆动基板31由平台21通过球面轴承支撑。 此外，在平台21和摇摆基板31之间设置空气，以使摇摆基板31和多孔单元41沿球面滚动。 该摇摆允​​许改进的悬浮单元12的顶表面12a自由倾斜。 当波纹玻璃基板被放置在悬浮装置上时，改进的悬浮单元12的顶表面12a倾斜，跟踪基板的倾斜。 在这种状态下喷射空气使基板浮起，其顶表面12a处于水平状态，并且允许悬浮力可靠地施加于基板。

公开(公告)号：US06666677B1

公开(公告)日：2003-12-23

申请号：US09711817

申请日：2000-11-13

申请人： Toshihiro Ichikawa ,  Masaki Saito

发明人： Toshihiro Ichikawa ,  Masaki Saito

IPC分类号： F23Q228

CPC分类号： F23Q2/164

摘要： A piezoelectric gas lighter includes a lighter body. The fuel gas in the lighter body is supplied to a nozzle through a valve mechanism which is opened and closed by an actuator lever and a piezoelectric unit ignites the fuel gas discharged from the nozzle. A depression member actuates the actuator lever and the piezoelectric unit to open the valve mechanism and ignite the fuel gas discharged from the nozzle in response to depression of the depression controller. The depression member includes a control cap operatively connected to a piezoelectric unit, a stopper member which is movable between a locking position where the control cap is prevented from being depressed and a releasing position where the control cap is permitted to be depressed and an urging member which urges the stopper member to the locking position. The stopper member is provided with a pair of sliding portions extending back and forth on opposite sides of the control cap and the sliding portions are slidably supported by the control cap so that the stopper member is movable downward together with the control cap and movable between the locking position and the releasing position. The urging member includes a pair of resilient pieces provided on opposite sides of the control cap so that they are engaged with the sliding portions of the stopper member to urge the stopper member to the locking position and the stopper member is moved to the releasing position by urging the stopper member toward the control cap.

摘要翻译： 压电式气体打火机包括打火机。 打火机中的燃料气体通过致动器杆打开和关闭的阀机构供给喷嘴，压电单元点燃从喷嘴排出的燃料气体。 按压部件驱动致动器杠杆和压电单元以打开阀机构，并且响应于凹陷控制器的按压而点燃从喷嘴排出的燃料气体。 凹陷构件包括可操作地连接到压电单元的控制帽，止动构件，其能够在防止控制帽被压下的锁定位置和允许控制帽被压下的释放位置之间移动;以及推动构件 其将止动件推动到锁定位置。 止动构件设置有一对在控制盖的相对侧上前后延伸的滑动部分，并且滑动部分由控制盖可滑动地支撑，使得止动构件可与控制盖一起向下移动， 锁定位置和释放位置。 推动构件包括设置在控制盖的相对侧上的一对弹性片，使得它们与止动构件的滑动部分接合以将止动构件推动到锁定位置，并且止动构件通过 将止动件推向控制帽。

公开(公告)号：US5545436A

公开(公告)日：1996-08-13

申请号：US336054

申请日：1994-11-04

申请人： Masaki Saito

发明人： Masaki Saito

IPC分类号： C23C14/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01L21/205 ,  H01L21/316 ,  C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/45595 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608

摘要： A CVD system for accomplishing deposition of a silicon oxide film on a wafer which is moved in a predetermined direction, under a reaction between an organic Si source and O.sub.3. The CVD system comprises a gas injector having a first slit for ejecting a gas containing O.sub.3, a second slit for ejecting a gas which is inert to a reaction between the organic Si source and O.sub.3, a third slit for ejecting a gas containing the organic Si source, a fourth slit for ejecting a gas which is inert to the reaction, a fifth slit for ejecting a gas containing the organic Si source, a sixth slit for ejecting a gas which is inert to the reaction, and a seventh slit for ejecting a gas containing O.sub.3. Additionally, the first to seventh slits are arranged in the order named in the predetermined wafer moving direction. This CVD system improves the characteristics and quality of silicon oxide film deposited on the wafer while lowering a so-called substrate dependency of the deposited film.

摘要翻译： 用于在有机Si源和O 3之间的反应下在预定方向上移动的晶片上实现氧化硅膜的沉积的CVD系统。 CVD系统包括气体喷射器，其具有用于喷射含有O 3的气体的第一狭缝，用于喷射对有机Si源和O 3之间的反应是惰性的气体的第二狭缝，用于喷射含有有机Si的气体的第三狭缝 源，用于喷射对反应呈惰性的气体的第四狭缝，用于喷射含有有机Si源的气体的第五狭缝，用于喷射对反应呈惰性的气体的第六狭缝和用于喷射 含O3的气体。 此外，第一至第七狭缝按照预定晶片移动方向的顺序排列。 该CVD系统改善沉积在晶片上的氧化硅膜的特性和质量，同时降低沉积膜的所谓衬底依赖性。

公开(公告)号：US5492735A

公开(公告)日：1996-02-20

申请号：US294409

申请日：1994-08-23

申请人： Masaki Saito

发明人： Masaki Saito

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  B05D3/06

CPC分类号： C23C16/5096 ,  C23C16/4405 ,  C23C16/50

摘要： A process for plasma deposition is disclosed, which permits increasing the plasma deposition processing capacity.In a single substrate processing plasma CVD apparatus, chamber plasma cleaning II is done once for every plural deposition cycles I. If necessary, for each deposition cycle the intensity of the electric field applied between pair electrodes is varied (for instance, increased to an extent corresponding to the deposition capacity reduction).

摘要翻译： 公开了一种用于等离子体沉积的方法，其允许提高等离子体沉积处理能力。 在单个衬底处理等离子体CVD装置中，每隔多个沉积循环I对室等离子体清洁II进行一次。如果需要，对于每个沉积循环，施加在对电极之间的电场强度变化（例如，增加到一定程度 对应于沉积容量降低）。