-
公开(公告)号:US20130068826A1
公开(公告)日:2013-03-21
申请号:US13415920
申请日:2012-03-09
CPC分类号: H01L24/27 , H01L24/75 , H01L2224/83191 , H01L2224/83192
摘要: A die bonder includes a die supply stage, which is configured to hold a wafer; a first head having a first collet, which is configured to pick up a die from the wafer and to attach the die, provisionally, on a target to be conducted with mounting thereon, on the attach stage; a second head having a second collet, which is configured to conduct main compression of the die, which is provisionally attached on the attach stage, on the target to be conducted with mounting; and a controller apparatus, wherein the controller apparatus controls the first head to pick up a next die from the die supply stage, during when the second head conducts the main compression on the die onto the target to be conducted with mounting, thereby achieving the die bonder and the die bonding method being stable in quality.
摘要翻译: 芯片接合器包括:晶片供给台,其配置成保持晶片; 第一头具有第一夹头,其被配置为从所述晶片拾取模具并且临时地将所述管芯附着到要安装在其上的待导电的靶上; 具有第二夹头的第二头部,其被构造成在临时安装在附接台上的模具上进行主压缩,以安装在导向件上; 以及控制装置,其特征在于,所述控制装置控制所述第一头从所述模具供给台拾取下一个模具,在所述第二头部将所述模具上的主压缩导向所述待进行导向的所述靶上,从而实现所述模具 粘合剂和芯片焊接方法质量稳定。
-
公开(公告)号:US10096526B2
公开(公告)日:2018-10-09
申请号:US13585900
申请日:2012-08-15
摘要: A bonding method of a die bonder with a single conveyance lane and a single bonding head, or a plurality of conveyance lanes and a plurality of bonding heads includes the steps of generating a classification map of class dies with different electric properties on the wafer, which are classified in accordance with a plurality of grades, picking up the die from the wafer, bonding the die onto a substrate or the die using a bonding head, conveying a class substrate corresponding to the class die on the conveyance lane in a unit of the class substrate, and further bonding the class die to the corresponding class substrate based on the classification map.
-
公开(公告)号:US08991681B2
公开(公告)日:2015-03-31
申请号:US13412684
申请日:2012-03-06
IPC分类号: B23K31/00 , B23K31/02 , H01L21/67 , H01L21/68 , H01L23/00 , H01L21/00 , H01L21/02 , H01L21/677 , H01L21/64
CPC分类号: H01L24/75 , H01L21/00 , H01L21/02 , H01L21/64 , H01L21/67 , H01L21/67144 , H01L21/677 , H01L21/68 , H01L21/682 , H01L24/00 , H01L24/01 , H01L24/02 , H01L24/10 , H01L2224/0401
摘要: A die bonder and a bonding method are disclosed which make it possible to provide high-quality products, particularly even if a die is rotated through predetermined degrees relative to an already-bonded die and then laminated.In the die bonder and bonding method in which a die is picked up from a wafer by a pick-up head which then places the die on an alignment stage, and the die is picked up from the alignment stage by a bonding head which then bond the die onto a substrate or an already-bonded die, a posture of the die is rotated through predetermined degrees on a plane parallel to a plane on which the bonding is performed, before the bonding head picks up the die from the alignment stage.
摘要翻译: 公开了一种管芯接合器和接合方法,其可以提供高质量的产品,特别是即使模具相对于已经结合的模具旋转预定角度然后层压。 在芯片接合器和接合方法中,其中通过拾取头从晶片上拾取管芯,然后将引线放置在校准台上,并且通过接合头从对准阶段拾取管芯,该接合头接合 模具到基板或已经结合的模具上,在接合头从对准台上取出模具之前,模具的姿态在与进行接合的平面平行的平面上旋转预定的角度。
-
公开(公告)号:US20130068824A1
公开(公告)日:2013-03-21
申请号:US13585900
申请日:2012-08-15
CPC分类号: H01L22/20 , H01L21/67132 , H01L21/67144 , H01L21/681 , H01L22/14 , H01L24/75 , H01L24/83 , H01L2224/7565 , H01L2224/757 , H01L2224/759 , H01L2224/83
摘要: A bonding method of a die bonder with a single conveyance lane and a single bonding head, or a plurality of conveyance lanes and a plurality of bonding heads includes the steps of generating a classification map of class dies with different electric properties on the wafer, which are classified in accordance with a plurality of grades, picking up the die from the wafer, bonding the die onto a substrate or the die using a bonding head, conveying a class substrate corresponding to the class die on the conveyance lane in a unit of the class substrate, and further bonding the class die to the corresponding class substrate based on the classification map.
摘要翻译: 具有单个输送通道和单个接合头,或多个输送通道和多个接合头的管芯接合器的接合方法包括以下步骤:在晶片上产生具有不同电特性的类别的分类图,其中 根据多个等级进行分类,从晶片拾取模具,使用结合头将模具接合到基板或模具上,以一个单位的方式将对应于类模的类基板输送在输送通道上 并且基于分类图进一步将类模具结合到相应的类基板。
-
公开(公告)号:US07757930B2
公开(公告)日:2010-07-20
申请号:US11837168
申请日:2007-08-10
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: B23K31/02
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方,随后半导体芯片和矩阵基板通过热压接而临时结合,同时 然后将临时接合的基质基板设置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板上,同时 由第二加热阶段直接加热。
-
公开(公告)号:US08292159B2
公开(公告)日:2012-10-23
申请号:US13295336
申请日:2011-11-14
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: B23K31/02
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方,随后半导体芯片和矩阵基板通过热压接而临时结合,同时 然后将临时接合的基质基板设置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板上,同时 由第二加热阶段直接加热。
-
公开(公告)号:US08074868B2
公开(公告)日:2011-12-13
申请号:US12956524
申请日:2010-11-30
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: B23K31/02
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方,随后半导体芯片和矩阵基板通过热压接而临时结合,同时 然后将临时接合的基质基板设置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板上,同时 由第二加热阶段直接加热。
-
公开(公告)号:US07270258B2
公开(公告)日:2007-09-18
申请号:US10901999
申请日:2004-07-30
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: B23K31/02
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, and then the matrix substrate is disposed above the semiconductor chips on the first heating stage. Subsequently, the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding, while heating the chips directly by the first heating stage. Thereafter, the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then, on the second heating stage, the semiconductor chips are thermocompression-bonded to the matrix substrate, while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方。 随后,半导体芯片和矩阵基板通过热压接而临时接合,同时通过第一加热阶段直接加热芯片。 然后,将暂时接合的基质基板配置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板,同时通过第二加热直接加热 阶段。
-
公开(公告)号:US08640943B2
公开(公告)日:2014-02-04
申请号:US13607864
申请日:2012-09-10
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: B23K31/02
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方,随后半导体芯片和矩阵基板通过热压接而临时结合,同时 然后将临时接合的基质基板设置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板上,同时 由第二加热阶段直接加热。
-
公开(公告)号:US20110070696A1
公开(公告)日:2011-03-24
申请号:US12956524
申请日:2010-11-30
申请人: Hiroshi Maki , Yukio Tani
发明人: Hiroshi Maki , Yukio Tani
IPC分类号: H01L21/50
CPC分类号: H01L24/83 , H01L21/561 , H01L23/3128 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/97 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2224/83101 , H01L2224/83192 , H01L2224/8385 , H01L2224/92147 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/05599
摘要: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
摘要翻译: 在组装半导体集成电路器件时,要提高生产率。 提供矩阵基板,将半导体芯片设置在第一加热台上,然后将矩阵基板设置在第一加热台上的半导体芯片的上方,随后半导体芯片和矩阵基板通过热压接而临时结合,同时 然后将临时接合的基质基板设置在与第一加热台相邻的第二加热台上,然后在第二加热台上将半导体芯片热压接合到基体基板上,同时 由第二加热阶段直接加热。
-
-
-
-
-
-
-
-
-