公开(公告)号：US07977700B2

公开(公告)日：2011-07-12

申请号：US12348027

申请日：2009-01-02

申请人： Hiroshi Mitsuyama ,  Kotaro Yajima ,  Naokazu Terai

发明人： Hiroshi Mitsuyama ,  Kotaro Yajima ,  Naokazu Terai

IPC分类号： H01L23/498 ,  H01L33/48

CPC分类号： H01S5/02244 ,  H01L33/62 ,  H01L2224/48091 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02469 ,  H01L2924/00014

摘要： A semiconductor package and a semiconductor light-emitting device including the semiconductor package. The semiconductor package includes: a frame for mounting a semiconductor light-emitting element; and a lead integral with the frame. The frame and the lead are made of a resin. A metal film is located in a predetermined area on the frame.

摘要翻译： 一种半导体封装件和包括该半导体封装件的半导体发光器件。 半导体封装包括：用于安装半导体发光元件的框架; 和与框架一体的引线。 框架和导线由树脂制成。 金属膜位于框架上的预定区域中。

公开(公告)号：US20090321777A1

公开(公告)日：2009-12-31

申请号：US12348027

申请日：2009-01-02

申请人： Hiroshi Mitsuyama ,  Kotaro Yajima ,  Naokazu Terai

发明人： Hiroshi Mitsuyama ,  Kotaro Yajima ,  Naokazu Terai

IPC分类号： H01L31/0203 ,  H01L23/495

CPC分类号： H01S5/02244 ,  H01L33/62 ,  H01L2224/48091 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02469 ,  H01L2924/00014

摘要： A semiconductor package and a semiconductor light-emitting device including the semiconductor package. The semiconductor package includes: a frame for mounting a semiconductor light-emitting element; and a lead integral with the frame. The frame and the lead are made of a resin. A metal film is located in a predetermined area on the frame.

摘要翻译： 一种半导体封装件和包括该半导体封装件的半导体发光器件。 半导体封装包括：用于安装半导体发光元件的框架; 和与框架一体的引线。 框架和导线由树脂制成。 金属膜位于框架上的预定区域中。

公开(公告)号：US08680599B2

公开(公告)日：2014-03-25

申请号：US13207002

申请日：2011-08-10

申请人： Hiroshi Mitsuyama ,  Yasuhisa Fujii ,  Keiichi Yamada

发明人： Hiroshi Mitsuyama ,  Yasuhisa Fujii ,  Keiichi Yamada

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L23/5223 ,  H01L21/7687 ,  H01L21/76883 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a more reliable semiconductor device including a lower-cost and more reliable capacitor and a method of manufacturing the same. This manufacturing method comprises the steps of: preparing a semiconductor substrate; and forming, over one of the major surfaces of the semiconductor substrate, a first metal electrode including an aluminum layer, a dielectric layer over the first metal electrode, and a second metal electrode over the dielectric layer. In the step of forming the first metal electrode, the aluminum layer is formed so that the surface thereof satisfies a relationship of Rmax

摘要翻译： 为了提供一种更可靠的半导体装置及其制造方法。 该制造方法包括以下步骤：制备半导体衬底; 以及在所述半导体衬底的一个主表面上形成第一金属电极，所述第一金属电极包括铝层，所述第一金属电极上的电介质层和所述电介质层上的第二金属电极。 在形成第一金属电极的步骤中，形成铝层，使得其表面满足Rmax <80nm，Rms <10nm和Ra <9nm的关系。 形成第一金属电极的步骤包括以下步骤：形成至少一个第一阻挡层; 在所述第一阻挡层上形成所述铝层; 并使构成铝层的结晶重结晶。

公开(公告)号：US07956473B2

公开(公告)日：2011-06-07

申请号：US12178373

申请日：2008-07-23

申请人： Hiroyuki Momono ,  Hiroshi Mitsuyama ,  Katsuhiro Hasegawa ,  Keiko Nishitsuji ,  Kazunobu Miki

发明人： Hiroyuki Momono ,  Hiroshi Mitsuyama ,  Katsuhiro Hasegawa ,  Keiko Nishitsuji ,  Kazunobu Miki

IPC分类号： H01L23/58 ,  H01L21/302 ,  H01L23/52

CPC分类号： H01L21/76838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02125 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Method of manufacturing semiconductor device including forming inter-layer insulating film on semiconductor substrate. First metal film is formed on inter-layer insulating film. First resist is formed on first metal film and patterned. Anisotropic etching performed on first metal film using first resist as mask. First resist is removed and second metal film is formed on inter-layer insulating film to cover remaining first metal film. Second resist is formed on second metal film in area where first metal film exists on inter-layer insulating film and part of area where first metal film does not exist. Anisotropic etching is performed on second metal film using second resist as mask and bonding pad having first metal film and second metal film, and upper layer wiring having second metal film and not first metal film. Second resist is removed. Surface protection film covering bonding pad is formed. Pad opening is formed on bonding pad.

摘要翻译： 制造半导体器件的方法，包括在半导体衬底上形成层间绝缘膜。 第一金属膜形成在层间绝缘膜上。 第一抗蚀剂在第一金属膜上形成并图案化。 使用第一抗蚀剂作为掩模对第一金属膜进行各向异性蚀刻。 第一抗蚀剂被去除并且第二金属膜形成在层间绝缘膜上以覆盖剩余的第一金属膜。 在层间绝缘膜上存在第一金属膜的区域和不存在第一金属膜的部分区域的第二金属膜上形成第二抗蚀剂。 使用第二抗蚀剂作为掩模和具有第一金属膜和第二金属膜的接合焊盘和具有第二金属膜而不是第一金属膜的上层布线在第二金属膜上进行各向异性蚀刻。 第二抗蚀剂被去除。 形成表面保护膜覆盖焊盘。 焊盘开口形成在焊盘上。

公开(公告)号：US20090026635A1

公开(公告)日：2009-01-29

申请号：US12178373

申请日：2008-07-23

申请人： Hiroyuki MOMONO ,  Hiroshi Mitsuyama ,  Katsuhiro Hasegawa ,  Keiko Nishitsuji ,  Kazunobu Miki

发明人： Hiroyuki MOMONO ,  Hiroshi Mitsuyama ,  Katsuhiro Hasegawa ,  Keiko Nishitsuji ,  Kazunobu Miki

IPC分类号： H01L21/302 ,  H01L23/58

CPC分类号： H01L21/76838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02125 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A method of manufacturing a semiconductor device comprises: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成层间绝缘膜的步骤; 在所述层间绝缘膜上形成第一金属膜的工序; 在第一金属膜上形成第一抗蚀剂并对第一抗蚀剂进行构图的步骤; 使用第一抗蚀剂作为掩模对第一金属膜进行各向异性蚀刻的步骤; 去除第一抗蚀剂的步骤; 在层间绝缘膜上形成第二金属膜以覆盖剩余的第一金属膜的步骤; 在层间绝缘膜上存在第一金属膜的区域和不存在第一金属膜的区域的一部分的第二金属膜上形成第二抗蚀剂的工序; 使用第二抗蚀剂作为掩模在第二金属膜上进行各向异性蚀刻并形成具有第一金属膜和第二金属膜的接合焊盘和具有第二金属膜的上层布线的步骤，但不是第一金属 电影; 去除第二抗蚀剂的步骤; 形成表面保护膜以覆盖所述接合焊盘的步骤; 以及在接合焊盘上的表面保护膜中形成焊盘开口的步骤。