摘要:
An extreme ultra violet light source apparatus prevents debris staying and accumulating within a chamber from contaminating the chamber and deteriorating the performance of an important optical component. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a driver laser for applying a laser beam to a target supplied to a predetermined position within the chamber to generate plasma; a collector mirror provided within the chamber, for collecting and outputting the extreme ultra violet light radiated from the plasma; an exhaust path communicating with the chamber and connected to an exhausting device, for maintaining an interior of the chamber at a certain pressure; a catching chamber provided in the exhaust path, for catching debris generated from the plasma; and a collecting unit for collecting the caught debris out of the chamber.
摘要:
A nozzle protection device capable of protecting a target nozzle from heat of plasma without disturbing formation of a stable flow of a target material in an LPP type EUV light source apparatus. This nozzle protection device includes a cooling unit which is formed with an opening for passing the target material therethrough, and which is formed with a flow path for circulating a cooling medium inside, and an actuator which changes a position or a shape of the cooling unit between a first state of evacuating the cooling unit from a trajectory of the target material and a second state of blocking heat radiation from the plasma to the nozzle by the cooling unit while securing a path of the target material in the cooling unit.
摘要:
A laser device, which includes an oscillator unit having a rectangular-solid-shaped housing containing a laser oscillator for generating and outputting a laser light; an amplifier unit having a rectangular-solid-shaped housing containing an amplifier that receives and amplifies the laser light to output; and, a group of optical elements including optical elements provided on a laser light path, wherein the laser device includes one or more amplifier units, and the oscillator and the amplifier units are arranged such that surfaces having a wide area other than a surface having a smallest area of a housing of the oscillator unit and a housing of at least one amplifier unit are next to and face each other, or such that surfaces having a wide area other than a surface having a smallest area of a housing of at least two amplifier units are next to and face each other.
摘要:
An EUV light source apparatus can reliably detect and accurately judge deterioration of an optical element in a laser beam focusing optics disposed within an EUV light generation chamber. This EUV light source apparatus includes: the EUV light generation chamber; a target material supply unit; an EUV light collector mirror; a driver laser; a window; a parabolic mirror which focuses collimated laser beam by reflection and is disposed within the EUV light generation chamber; an energy detector detecting energy of the laser beam diffused without being applied to a target material after being focused by the laser beam focusing optics when the EUV light is not generated; and a processing unit for judging the deterioration of the window and the parabolic mirror according to the laser beam energy detected by the energy detector.
摘要:
An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.
摘要:
An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.
摘要:
The higher efficiency and lower power consumption are realized in a laser system for generating a high-power short-pulse laser beam. The laser system includes a laser oscillator for generating a pulse laser beam by laser oscillation, plural amplifiers for sequentially inputting the pulse laser beam generated by the laser oscillator and amplifying the pulse laser beam, and a control unit for controlling the laser oscillator to perform burst oscillation and halting an amplification operation of at least one of the plural amplifiers in a burst halt period between burst oscillation periods.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.