公开(公告)号：US20110180734A1

公开(公告)日：2011-07-28

申请号：US13081899

申请日：2011-04-07

申请人： Masato MORIYA ,  Tamotsu ABE ,  Takashi SUGANUMA ,  Hiroshi SOMEYA ,  Takayuki YABU ,  Akira SUMITANI ,  Osamu WAKABAYASHI

发明人： Masato MORIYA ,  Tamotsu ABE ,  Takashi SUGANUMA ,  Hiroshi SOMEYA ,  Takayuki YABU ,  Akira SUMITANI ,  Osamu WAKABAYASHI

IPC分类号： H05G2/00

CPC分类号： H05G2/003 ,  H05G2/008

摘要： An EUV light source apparatus can reliably detect and accurately judge deterioration of an optical element in a laser beam focusing optics disposed within an EUV light generation chamber. This EUV light source apparatus includes: the EUV light generation chamber; a target material supply unit; an EUV light collector mirror; a driver laser; a window; a parabolic mirror which focuses collimated laser beam by reflection and is disposed within the EUV light generation chamber; an energy detector detecting energy of the laser beam diffused without being applied to a target material after being focused by the laser beam focusing optics when the EUV light is not generated; and a processing unit for judging the deterioration of the window and the parabolic mirror according to the laser beam energy detected by the energy detector.

摘要翻译： EUV光源装置可以可靠地检测并准确地判断设置在EUV光产生室内的激光束聚焦光学元件中的光学元件的劣化。 该EUV光源装置包括：EUV光产生室; 目标材料供应单位; EUV集光镜; 驱动激光器 一个窗口; 抛物面镜，其通过反射聚焦准直激光束并设置在EUV光产生室内; 能量检测器，当不产生EUV光时，检测在被激光束聚焦光学器件聚焦之后不会施加到目标材料上的激光束的能量扩散; 以及处理单元，用于根据由能量检测器检测的激光束能量来判断窗口和抛物面镜的劣化。

公开(公告)号：US20100140512A1

公开(公告)日：2010-06-10

申请号：US12603872

申请日：2009-10-22

申请人： Takashi SUGANUMA ,  Masato MORIYA ,  Tamotsu ABE ,  Kouji KAKIZAKI ,  Osamu WAKABAYASHI

发明人： Takashi SUGANUMA ,  Masato MORIYA ,  Tamotsu ABE ,  Kouji KAKIZAKI ,  Osamu WAKABAYASHI

IPC分类号： G21K5/00

CPC分类号： G03F7/70891 ,  G03F7/70033 ,  G03F7/70141 ,  G03F7/70175 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70591 ,  G03F7/7085 ,  H05G2/005

摘要： An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.

摘要翻译： 可以检测EUV收集镜的位置或姿势偏移的极紫外（EUV）光源装置。 该装置包括：一个室; 用于将目标材料供应到所述室中的目标供给机构; 用于用激光束照射目标材料以产生等离子体的驱动器激光器; 收集器反射镜，具有第一焦点和第二焦点，用于将在第一焦点处产生的光朝向第二焦点反射; 分离器光学元件，设置在由集光镜反射的光的光路中，用于分离由集光镜反射的一部分光; 以及图像传感器，其设置在由分离光学元件分离的光的光路中，用于检测由分离光学元件分离的光的轮廓。

公开(公告)号：US20090261242A1

公开(公告)日：2009-10-22

申请号：US12406388

申请日：2009-03-18

申请人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

发明人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

IPC分类号： B01D59/44 ,  H01J49/00

CPC分类号： H05G2/003 ,  G03F7/70033 ,  G03F7/70858 ,  G03F7/70916 ,  G03F7/70983 ,  G21K1/093 ,  G21K2201/00 ,  H05G2/005 ,  H05G2/008

摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

摘要翻译： 一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子， 其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。

公开(公告)号：US20120217414A1

公开(公告)日：2012-08-30

申请号：US13465108

申请日：2012-05-07

申请人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

发明人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

IPC分类号： H01J1/50

CPC分类号： H05G2/003 ,  G03F7/70033 ,  G03F7/70858 ,  G03F7/70916 ,  G03F7/70983 ,  G21K1/093 ,  G21K2201/00 ,  H05G2/005 ,  H05G2/008

摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

摘要翻译： 一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子， 其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。

公开(公告)号：US20110310365A1

公开(公告)日：2011-12-22

申请号：US13051649

申请日：2011-03-18

申请人： Takayuki YABU ,  Kouji KAKIZAKI ,  Yukio WATANABE ,  Osamu WAKABAYASHI

发明人： Takayuki YABU ,  Kouji KAKIZAKI ,  Yukio WATANABE ,  Osamu WAKABAYASHI

IPC分类号： G03B27/52

CPC分类号： G03F7/70033 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

摘要： A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet for introducing thereinto a laser beam outputted from the laser apparatus; a target supply unit provided to the chamber for supplying a target material to a predetermined region in the chamber; a recovery control unit for instructing the target supply unit to execute recovery operation if a predetermined condition is met; a recovery unit for executing the recovery operation in response to the instruction from the recovery control unit; and a position measuring unit for measuring a position of the target material supplied from the target supply unit into the chamber.

摘要翻译： 与激光装置一起使用的室装置可以包括：设置有至少一个入口的室，用于将从激光装置输出的激光束引入其中; 目标供给单元，其设置在所述室中，用于将目标材料供应到所述室中的预定区域; 恢复控制单元，用于在满足预定条件时指示目标供应单元执行恢复操作; 恢复单元，用于响应于来自恢复控制单元的指令执行恢复操作; 以及位置测量单元，用于测量从目标供应单元供应到室中的目标材料的位置。

公开(公告)号：US20080087840A1

公开(公告)日：2008-04-17

申请号：US11870020

申请日：2007-10-10

申请人： Yoshifumi UENO ,  Georg SOUMAGNE ,  Akira SUMITANI ,  Osamu WAKABAYASHI

发明人： Yoshifumi UENO ,  Georg SOUMAGNE ,  Akira SUMITANI ,  Osamu WAKABAYASHI

IPC分类号： H05G2/00

CPC分类号： H05G2/001 ,  B82Y10/00 ,  G03F7/70033

摘要： An extreme ultra violet light source apparatus having relatively high output for exposure, in which debris are suppressed to be produced as much as possible in stead of disposing debris that has been once produced. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a target supply unit for supplying solid tin or lithium as a target to a predetermined position within the chamber; a CO2 laser for applying a laser beam based on pulse operation to the target supplied by the target supply unit so as to generate plasma; and a collector mirror having a multilayer film on a reflecting surface thereof, for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light.

摘要翻译： 具有相对高的曝光输出的极紫外光源装置，其中尽可能多地抑制碎屑被产生以代替已经生产的碎屑。 极紫外光源装置包括：产生极紫外光的室; 用于将固体锡或锂作为目标供应到所述室内的预定位置的目标供应单元; 用于将基于脉冲操作的激光束施加到由目标供给单元提供的目标以产生等离子体的CO 2激光器; 以及在其反射表面上具有多层膜的收集器反射镜，用于收集从等离子体辐射的极紫外光以输出极紫外光。

公开(公告)号：US20150168848A1

公开(公告)日：2015-06-18

申请号：US14629282

申请日：2015-02-23

申请人： Hiroshi TANAKA ,  Akihiko KUROSU ,  Hiroyuki MASUDA ,  Hideyuki OCHIAI ,  Osamu WAKABAYASHI ,  Masato MORIYA

发明人： Hiroshi TANAKA ,  Akihiko KUROSU ,  Hiroyuki MASUDA ,  Hideyuki OCHIAI ,  Osamu WAKABAYASHI ,  Masato MORIYA

IPC分类号： G03F7/20 ,  H01L21/268 ,  H01L21/67 ,  H01L21/66

CPC分类号： G03F7/70483 ,  G03F7/70041 ,  G03F7/70058 ,  G03F7/70358 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/26

摘要： A light source apparatus according to an embodiment may be used for an exposure apparatus which exposes a plurality of wafers by repeating a wafer exposure for exposing a total exposure area of each wafer. The wafer exposure may include a sequential execution of scanning exposures in which each divided area defined by dividing the total exposure area of each wafer is scanned by pulsed light. The apparatus may comprise: a light source controller configured to execute a control for outputting the pulsed light based on a luminescence trigger signal received from the exposure apparatus; a detector configured to detect a characteristic of the pulsed light; and a data collection processor configured to collect at least a piece of data in data included in a pulse light data group related to the pulsed light detected by the detector and a control data group related to the control, and execute a mapping process of mapping the collected data by at least one of scanning exposure basis and wafer exposure basis.

摘要翻译： 根据实施例的光源装置可以用于通过重复用于暴露每个晶片的总曝光区域的晶片曝光而暴露多个晶片的曝光装置。 晶片曝光可以包括扫描曝光的顺序执行，其中通过用脉冲光扫描每个晶片的总曝光面积所限定的每个划分区域。 该装置可以包括：光源控制器，被配置为基于从曝光装置接收的发光触发信号执行用于输出脉冲光的控制; 检测器，被配置为检测所述脉冲光的特性; 以及数据收集处理器，被配置为收集与由所述检测器检测到的脉冲光有关的脉冲光数据组中包含的数据中的至少一条数据以及与所述控制相关的控制数据组，并执行映射处理 通过扫描曝光基础和晶片曝光基础中的至少一个来收集数据。

公开(公告)号：US20120068091A1

公开(公告)日：2012-03-22

申请号：US13306358

申请日：2011-11-29

申请人： Akira ENDO ,  Krzysztof NOWAK ,  Hideo HOSHINO ,  Tatsuya ARIGA ,  Masato MORIYA ,  Osamu WAKABAYASHI

发明人： Akira ENDO ,  Krzysztof NOWAK ,  Hideo HOSHINO ,  Tatsuya ARIGA ,  Masato MORIYA ,  Osamu WAKABAYASHI

IPC分类号： G21K5/00 ,  H01S3/04

CPC分类号： H05G2/003 ,  H01S3/005 ,  H01S3/0064 ,  H01S3/2316 ,  H05G2/008

摘要： An EUV light source of the present invention is capable of using a saturable absorber stably and continuously in a high heat load state. A saturable absorber (SA) device is disposed on a laser beam line to absorb feeble light, such as self-excited oscillation light, parasitic oscillation light or return light. SA gas from an SA gas cylinder and buffer gas from a buffer gas cylinder are mixed to be a mixed gas. The mixed gas is supplied to an SA gas cell via a supply pipeline, and absorbs the feeble light included in the laser beam. The mixed gas is exhausted via an exhaust pipeline, and is sent to a heat exchanger. The mixed gas, cooled down by a heat exchanger, is sent back to the SA gas cell by a circulation pump.

摘要翻译： 本发明的EUV光源能够在高热负荷状态下稳定且连续地使用饱和吸收体。 可饱和吸收体（SA）装置设置在激光束线上以吸收诸如自激振荡光，寄生振荡光或返回光的微弱光。 来自SA气瓶的SA气体和来自缓冲气瓶的缓冲气体混合成混合气体。 混合气体经由供给管路供给到SA气室，吸收激光束中包含的微弱光。 混合气体通过排气管道排出，并被送到热交换器。 由热交换器冷却的混合气体通过循环泵送回到SA气室。

公开(公告)号：US20090267003A1

公开(公告)日：2009-10-29

申请号：US12469176

申请日：2009-05-20

申请人： Masato MORIYA ,  Osamu WAKABAYASHI ,  Georg SOUMAGNE

发明人： Masato MORIYA ,  Osamu WAKABAYASHI ,  Georg SOUMAGNE

IPC分类号： G21K5/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射以不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

公开(公告)号：US20120267553A1

公开(公告)日：2012-10-25

申请号：US13540314

申请日：2012-07-02

申请人： Shinji NAGAI ,  Tamotsu ABE ,  Takanobu ISHIHARA ,  Osamu WAKABAYASHI

发明人： Shinji NAGAI ,  Tamotsu ABE ,  Takanobu ISHIHARA ,  Osamu WAKABAYASHI

IPC分类号： G21K5/00

CPC分类号： H05G2/003 ,  G01J3/10 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

摘要： An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.

摘要翻译： 一种与激光系统组合使用的极紫外光发生装置，该装置可以包括：设置有至少一个入口的腔室，用于将从激光系统输出的激光束引入腔室; 目标供给单元，其设置在所述室中，用于将所述目标材料供给到所述室内的预定区域，所述目标材料用所述激光束照射; 设置在所述室内的至少一个光学元件; 用于产生围绕预定区域的磁场的磁场产生单元; 离子收集单元，设置在所述磁场的磁力线的方向上，用于收集当所述靶材料被所述激光束照射并沿着所述磁力线流动时产生的离子; 以及用于将蚀刻气体引入到室中的气体引入单元。