公开(公告)号：US20100044343A1

公开(公告)日：2010-02-25

申请号：US12545541

申请日：2009-08-21

申请人： Hiroshi Tomita ,  Linan Ji ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Hiroyasu Iimori ,  Hidekazu Hayashi

发明人： Hiroshi Tomita ,  Linan Ji ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Hiroyasu Iimori ,  Hidekazu Hayashi

IPC分类号： C03C15/00

CPC分类号： C03C15/00 ,  H01L21/67028 ,  H01L21/67126

摘要： A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.

摘要翻译： 一种用于处理其上形成有多个图案的基板的基板处理装置，具有耐化学品的第一室，并且用该化学品清洁该基板; 设置在第一室的上方或下方的第二室具有比第一室更高的耐压性，并且对基板进行超临界干燥; 以及设置在第一和第二室之间并可以打开/关闭的门单元。

公开(公告)号：US20100240219A1

公开(公告)日：2010-09-23

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

公开(公告)号：US07985683B2

公开(公告)日：2011-07-26

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/312

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20100075504A1

公开(公告)日：2010-03-25

申请号：US12574543

申请日：2009-10-06

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20090311874A1

公开(公告)日：2009-12-17

申请号：US12257493

申请日：2008-10-24

申请人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

发明人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

IPC分类号： H01L21/31

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.

摘要翻译： 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗 通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

公开(公告)号：US07838425B2

公开(公告)日：2010-11-23

申请号：US12257493

申请日：2008-10-24

申请人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

发明人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.

摘要翻译： 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗 通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

公开(公告)号：US07749909B2

公开(公告)日：2010-07-06

申请号：US12574543

申请日：2009-10-06

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/311 ,  H01L21/365

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US07097784B2

公开(公告)日：2006-08-29

申请号：US10742992

申请日：2003-12-23

申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

公开(公告)号：US07776756B1

公开(公告)日：2010-08-17

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20050230045A1

公开(公告)日：2005-10-20

申请号：US10922905

申请日：2004-08-23

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： C23F1/08 ,  B44C1/22 ,  C23F1/00 ,  C23F1/16 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。