公开(公告)号：US5295529A

公开(公告)日：1994-03-22

申请号：US782765

申请日：1991-10-22

申请人： Hiroto Matsuo ,  Takashi Imakoma ,  Seiichi Kondo ,  Iwaji Kawamoto

发明人： Hiroto Matsuo ,  Takashi Imakoma ,  Seiichi Kondo ,  Iwaji Kawamoto

IPC分类号： H01B17/06 ,  H01B17/38 ,  H01B19/00 ,  B22D19/08

CPC分类号： H01B17/38

摘要： Disclosed is a method and a mold for forming a zinc collar on an insulator metal cap. The zinc collar forming mold comprises a setting section for setting the metal cap in position on the mold and an upwardly opening cavity defined around the periphery of the setting section. For molding a zinc collar, the metal cap is immersed in a molten zinc, and the metal cap is set upright on the setting section of the mold with the lower half thereof being still in the molten state. Subsequently, a molten zinc is poured from the upper opening of the mold, and upon solidification of the molten zinc, a zinc collar can be formed around the external circumference of the metal cap.

摘要翻译： 公开了一种用于在绝缘体金属盖上形成锌合金环的方法和模具。 锌合金成形模具包括用于将金属盖设置在模具上的位置的设置部分和围绕设置部分的周边限定的向上开口的腔。 为了模制锌合金环，将金属盖浸入熔融锌中，并将金属盖直立放置在模具的设置部分上，其下半部分处于熔融状态。 随后，从模具的上部开口浇注熔融的锌，并且在熔融锌固化时，可以在金属盖的外周周围形成锌环。

公开(公告)号：US5323839A

公开(公告)日：1994-06-28

申请号：US41166

申请日：1993-04-01

申请人： Hiroto Matsuo ,  Takashi Imakoma ,  Iwaji Kawamoto ,  Seiichi Kondo

发明人： Hiroto Matsuo ,  Takashi Imakoma ,  Iwaji Kawamoto ,  Seiichi Kondo

IPC分类号： H01B17/06 ,  H01B17/38 ,  H01B19/00 ,  B22D17/24

CPC分类号： H01B17/38

摘要： The invention is directed to a method and a mold for forming a zinc collar on an insulator metal cap. The zinc collar forming mold is composed of a setting section for setting the metal cap in position on the mold and an upwardly opening cavity defined around the periphery of the setting section. For molding a zinc collar, the metal cap is immersed in a molten zinc, and the metal cap is set upright on the setting section of the mold with the lower half thereof being still in the molten state. Subsequenctly, a molten zinc is poured from the upper opening of the mold, and upon solidification of the molten zinc, a zinc collar can be formed around the external circumference of the metal cap.

摘要翻译： 本发明涉及一种用于在绝缘体金属盖上形成锌合金环的方法和模具。 锌合金成型模具由用于将金属盖设置在模具上的位置的设置部分和围绕设置部分的周边限定的向上开口的腔体组成。 为了模制锌合金环，将金属盖浸入熔融锌中，并将金属盖直立放置在模具的设置部分上，其下半部分处于熔融状态。 其次，从模具的上部开口浇注熔融的锌，在熔融锌凝固时，可以在金属盖的外周形成锌合金环。

公开(公告)号：US20080260156A1

公开(公告)日：2008-10-23

申请号：US11660105

申请日：2004-08-19

申请人： Akihiro Baba ,  Shouji Sakurai ,  Seiichi Kondo ,  Tatsuji Munaka ,  Mariko Sawamura

发明人： Akihiro Baba ,  Shouji Sakurai ,  Seiichi Kondo ,  Tatsuji Munaka ,  Mariko Sawamura

IPC分类号： H04L9/06 ,  G06F21/00

CPC分类号： G06F21/6209 ,  G06F11/1458 ,  G06F11/1464 ,  G06F11/1469 ,  G06F21/34 ,  G06F21/88 ,  G06F2221/2103 ,  G06F2221/2129

摘要： It is an object to provide a method for invalidation and new registration of a storage medium, a method for backup of data stored in a storage medium and for restoration of backup data to a storage medium, and a method for encryption of and application of an electronic signature to data to be backed up, and for decryption of backup data to be restored and verification of a signature. A service device includes a reception unit for receiving a request for data processing regarding a storage medium from a communication terminal device connected to the storage medium, an authentication unit for performing authentication of whether or not the storage medium connected to the communication terminal device is valid, and a database for storing a public key of the storage medium, wherein, when the reception unit receives a request for invalidation of the first storage medium from the communication terminal device, and the authentication unit authenticates the second storage medium connected to the communication terminal device as a valid storage medium, the database deletes the public key of the first storage medium stored in the database.

摘要翻译： 本发明的目的是提供一种用于存储介质的无效和新的注册的方法，用于备份存储在存储介质中的数据的方法以及用于将备份数据恢复到存储介质的方法，以及用于对存储介质进行加密和应用的方法 对要备份的数据进行电子签名，以及解密要恢复的备份数据和签名的验证。 服务设备包括：接收单元，用于从连接到存储介质的通信终端设备接收关于存储介质的数据处理的请求;认证单元，用于执行与通信终端设备连接的存储介质是否有效的认证 以及用于存储所述存储介质的公开密钥的数据库，其中，当所述接收单元从所述通信终端设备接收到所述第一存储介质的无效请求时，所述认证单元认证连接到所述通信终端的所述第二存储介质 设备作为有效的存储介质，数据库删除存储在数据库中的第一个存储介质的公开密钥。

公开(公告)号：US20080233736A1

公开(公告)日：2008-09-25

申请号：US12127564

申请日：2008-05-27

申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

IPC分类号： H01L21/4763

CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

摘要翻译： 为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层 含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

公开(公告)号：US07183212B2

公开(公告)日：2007-02-27

申请号：US10898252

申请日：2004-07-26

申请人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  C09G1/04 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

摘要翻译： 描述了适用于电子电路器件的多层金属化的抛光技术，其包括用包含氧化物质，磷酸和保护层形成剂的抛光液抛光金属膜。 本发明能够在抑制划痕，分层，凹陷或侵蚀的发生的同时以高的去除率对金属膜进行研磨。

公开(公告)号：US20060141792A1

公开(公告)日：2006-06-29

申请号：US11357181

申请日：2006-02-21

申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

IPC分类号： H01L21/44

CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP). method, a process for manufacturing. a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

摘要翻译： 为了提供通过化学机械抛光（CMP）形成的金属配线的防腐蚀技术。 方法，制造方法。 根据本发明的半导体集成电路器件包括以下步骤：在晶片的主面上形成Cu（或含有Cu作为主要成分的Cu合金）的金属层，然后通过化学机械抛光使金属层平坦化 （CMP）方法形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

公开(公告)号：US06800557B2

公开(公告)日：2004-10-05

申请号：US10369716

申请日：2003-02-21

申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

IPC分类号： H01L21302

CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

摘要翻译： 为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层 含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

公开(公告)号：US06750128B2

公开(公告)日：2004-06-15

申请号：US10396410

申请日：2003-03-26

申请人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L213205

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  H01L21/7684

摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

摘要翻译： 本发明提供减少和抑制划痕和分层，抑制和控制凹陷和侵蚀的发展并以高抛光速率抛光的技术。 使用包含氧化剂，磷酸，有机酸，形成抑制层的化学品和水的抛光溶液进行抛光。

公开(公告)号：US06596638B1

公开(公告)日：2003-07-22

申请号：US09618999

申请日：2000-07-18

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。 在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US4596141A

公开(公告)日：1986-06-24

申请号：US610550

申请日：1984-05-15

申请人： Seiichi Kondo

发明人： Seiichi Kondo

IPC分类号： F01M11/12 ,  G01F23/00 ,  G01F23/04 ,  G01F23/22 ,  G01F23/24 ,  G08B21/00

CPC分类号： G01F23/241 ,  G01F23/04

摘要： An electrically operated oil level gauge is composed of a flexible elongate bar whose one end section is provided with an oil level sensing element such as a thermistor. Additionally, a flexible elongate printed-wiring film is adhered on the surface of the flexible elongate bar so as to electrically connect the sensing element with a lead wire through which an electric current is supplied to the sensing element, thereby rendering the oil level gauge axially flexible while effectively preventing lead wire troubles.

摘要翻译： 电动油位计由柔性细长杆构成，其一端部设置有诸如热敏电阻的油位传感元件。 此外，柔性细长印刷布线膜粘附在柔性细长条的表面上，以便将感测元件与引线电连接，通过该导线将电流供应到感测元件，从而使油位计轴向 灵活，同时有效防止引线故障。