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公开(公告)号：US07787735B2
公开(公告)日：2010-08-31
申请号：US11822542
申请日：2007-07-06
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00
摘要： There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.
摘要翻译： 公开了传播表面等离子体波的波导结构，包括：量子阱结构，设置在半导体衬底上; 其中所述量子阱结构具有量子阱层，其又具有与基本上正交于所述量子阱结构相对于所述半导体衬底的取向方向的假想平面相交的交叉区域，以及所述量子阱结构的介电常数的实部 量子阱结构对于预定波长的THz波是负的。
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公开(公告)号：US20080013878A1
公开(公告)日：2008-01-17
申请号：US11822542
申请日：2007-07-06
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00
摘要： There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.
摘要翻译： 公开了传播表面等离子体波的波导结构，包括：量子阱结构，设置在半导体衬底上; 其中所述量子阱结构具有量子阱层，其又具有与基本上正交于所述量子阱结构相对于所述半导体衬底的取向方向的假想平面相交的交叉区域，以及所述量子阱结构的介电常数的实部 量子阱结构对于预定波长的THz波是负的。
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公开(公告)号：US20100230596A1
公开(公告)日：2010-09-16
申请号：US12738163
申请日：2008-10-24
CPC分类号： H01Q1/44 , H01L31/0224 , H01L31/0304 , H01L31/09 , H01Q1/38 , H01Q9/16 , H01Q9/28 , H01Q21/062 , H01S1/02 , Y02E10/544
摘要： This invention relates to a photoconductive antenna element having a structure capable of preventing element characteristics from deteriorating and attain a smaller size at the same time. This photoconductive antenna element (17) comprises a pair of electrodes (21) formed on a semiconductor layer (19). Each electrode (21) is constituted by an antenna part (22), pad parts (23), and a line part (24) connecting them, while the line part (24) includes a parallel portion (24a) extending from the antenna part (22). In the line part (24) of one electrode (21), a portion other than the antenna region (A) is bent opposite to the other electrode (21). In the line part (24) of the other electrode (21), a portion other than the antenna region (A) is bent opposite to the one electrode (21). This structure can prevent the photoconductive antenna element (17) from deteriorating its element characteristics and make it smaller.
摘要翻译： 本发明涉及具有能够同时防止元件特性恶化并达到较小尺寸的结构的光电导天线元件。 该光电导天线元件（17）包括形成在半导体层（19）上的一对电极（21）。 每个电极（21）由天线部分（22），焊盘部分（23）和连接它们的线部分（24）构成，而线部分（24）包括从天线部分延伸的平行部分 （22）。 在一个电极（21）的线路部分（24）中，与天线区域（A）以外的部分相对于另一个电极（21）弯曲。 在另一个电极（21）的线路部分（24）中，天线区域（A）之外的部分与一个电极（21）相对弯曲。 这种结构可以防止光导天线元件（17）劣化其元件特性并使其变小。
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公开(公告)号：US20050173712A1
公开(公告)日：2005-08-11
申请号：US10500238
申请日：2002-12-26
申请人： Kazutoshi Nakajima
发明人： Kazutoshi Nakajima
IPC分类号： H01L21/306 , H01L31/0224 , H01L31/0352 , H01L31/10 , H01L31/105 , H01L27/15 , H01L21/00
CPC分类号： H01L31/105 , H01L31/022416 , H01L31/035281 , Y02E10/50
摘要： In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2. An n-type GaAs layer 3, an i-type GaAs layer 4, and a p-type GaAs layer 5 are successively deposited on the lower step surface formed in a central region of the semi-insulating GaAs substrate 2. Furthermore, a p-side ohmic electrode 6 is provided astride and above a flat surface formed by the p-type GaAs layer 5 and the upper step surface of the semi-insulating GaAs substrate 2, and an n-side ohmic electrode 7 is provided astride and above a flat surface formed by the n-type GaAs layer 3 and the middle step surface of the semi-insulating GaAs substrate 2.
摘要翻译： 在本发明的半导体光电探测器1中，在半绝缘GaAs衬底2的顶表面部分形成具有不同高度的三个阶梯的平面。 在形成于半绝缘GaAs衬底2的中心区域的下阶层表面上依次沉积n型GaAs层3，i型GaAs层4和p型GaAs层5。 此外，在p型GaAs层5和半绝缘GaAs衬底2的上部台阶表面形成的平坦表面上跨越并设置p侧欧姆电极6，并且设置n侧欧姆电极7 跨越并由n型GaAs层3形成的平坦表面和半绝缘GaAs衬底2的中间台阶表面。
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公开(公告)号：US5068815A
公开(公告)日：1991-11-26
申请号：US541309
申请日：1990-06-21
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
摘要： SUM and CARRY output signals of a first optical half adder are provided to one input terminal of a second optical half adder and an optical latch memory, respectively, and an output signal of the optical latch memory is provided to the other input terminal of the second optical half adder. Input and output of the two optical half adders and optical latch memory are performed through an optical signal. Each optical half adder includes two light-receiving elements each having a symmetrical electrode arrangement in which two Schottky junctions are connected to each other opposite in polarity, and peripheral elements of resistors, a capacitor and an amplifier. The optical latch memory is an optical flip-flop memory in which a high-speed light-receiving element produces an electric signal in response to an input optical signals, and a high-speed light-emitting element produces, in response to the electric signal guided from the light-receiving element, feed-back light to be applied to the light-receiving element and an output optical signal.
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公开(公告)号：US08093560B2
公开(公告)日：2012-01-10
申请号：US12738163
申请日：2008-10-24
IPC分类号： G01J5/02
CPC分类号： H01Q1/44 , H01L31/0224 , H01L31/0304 , H01L31/09 , H01Q1/38 , H01Q9/16 , H01Q9/28 , H01Q21/062 , H01S1/02 , Y02E10/544
摘要： This invention relates to a photoconductive antenna element having a structure capable of preventing element characteristics from deteriorating and attain a smaller size at the same time. This photoconductive antenna element (17) comprises a pair of electrodes (21) formed on a semiconductor layer (19). Each electrode (21) is constituted by an antenna part (22), pad parts (23), and a line part (24) connecting them, while the line part (24) includes a parallel portion (24a) extending from the antenna part (22). In the line part (24) of one electrode (21), a portion other than the antenna region (A) is bent opposite to the other electrode (21). In the line part (24) of the other electrode (21), a portion other than the antenna region (A) is bent opposite to the one electrode (21). This structure can prevent the photoconductive antenna element (17) from deteriorating its element characteristics and make it smaller.
摘要翻译： 本发明涉及具有能够同时防止元件特性恶化并达到较小尺寸的结构的光电导天线元件。 该光电导天线元件（17）包括形成在半导体层（19）上的一对电极（21）。 每个电极（21）由天线部分（22），焊盘部分（23）和连接它们的线部分（24）构成，而线部分（24）包括从天线部分延伸的平行部分 （22）。 在一个电极（21）的线路部分（24）中，与天线区域（A）以外的部分相对于另一个电极（21）弯曲。 在另一个电极（21）的线路部分（24）中，天线区域（A）之外的部分与一个电极（21）相对弯曲。 这种结构可以防止光导天线元件（17）劣化其元件特性并使其变小。
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公开(公告)号：US07217932B2
公开(公告)日：2007-05-15
申请号：US10717904
申请日：2003-11-21
IPC分类号： G01J5/10
CPC分类号： G01J1/429 , H01L2224/48465
摘要： A UV sensor (1) includes a container (5) in which the upper end opening of a metal side tube (2) is sealed with a front plate (3) composed of borosilicate glass as an incident light window and the lower end opening is sealed with a base plate (4). The front plate (3) serving as an incident light window constitutes part of the wall of container (5) by sealing the upper end opening of the metal side tube (2). A pin-type photodiode (6) is disposed inside the container (5). The pin-type photodiode (6) comprises a photoabsorption layer (9) formed from InxGa(1−x)N (0
摘要翻译： UV传感器（1）包括容器（5），金属侧管（2）的上端开口用作为入射光窗的硼硅玻璃构成的前板（3）密封，下端开口 用基板（4）密封。 用作入射光窗的前板（3）通过密封金属侧管（2）的上端开口构成容器（5）的壁的一部分。 销式光电二极管（6）设置在容器（5）的内部。 针式光电二极管（6）包括由n个（n-1）x（1-x）N（0
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公开(公告)号：US5109358A
公开(公告)日：1992-04-28
申请号：US423203
申请日：1989-10-17
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
CPC分类号： G11C11/42
摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.
摘要翻译： 一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射 响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件 光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括 通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号 环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。
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9.发明授权公开(公告)号：US07816866B2
公开(公告)日：2010-10-19
申请号：US11585936
申请日：2006-10-25
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译： 半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于 光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。
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公开(公告)号：US07214971B2
公开(公告)日：2007-05-08
申请号：US10864797
申请日：2004-06-10
申请人： Minoru Niigaki , Kazutoshi Nakajima
发明人： Minoru Niigaki , Kazutoshi Nakajima
IPC分类号： H01L29/32 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L31/03046 , H01L31/1035 , Y02E10/544
摘要： A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the boundary between the portion of the p-type layer and the middle region. An n-type layer on the p-type layer has a top surface including a portion on a level with the upper region. Another electrode covers at least part of the boundary between the portion of the n-type layer and the upper region.
摘要翻译： 半导体光接收装置具有包括其前侧的上部，中部和下部区域的基板。 下部区域上的p型层具有顶部表面，该顶部表面包括与中间区域在水平面上的部分。 电极覆盖p型层的部分和中间区域之间的边界的至少一部分。 p型层上的n型层具有包括与上部区域的层的一部分的顶面。 另一个电极覆盖n型层的部分和上部区域之间的边界的至少一部分。
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