Semiconductor device manufacturing method including forming FOX with dual oxidation
    1.
    发明授权
    Semiconductor device manufacturing method including forming FOX with dual oxidation 有权
    半导体器件制造方法,包括形成具有双重氧化的FOX

    公开(公告)号:US06579769B2

    公开(公告)日:2003-06-17

    申请号:US09726384

    申请日:2000-12-01

    IPC分类号: H01L21336

    CPC分类号: H01L21/76221

    摘要: In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.

    摘要翻译: 在制造半导体器件的方法中,包括在半导体衬底的表面上形成防氧化层的步骤,在氧化防止层中形成第一窗口,将半导体衬底放置在第一气氛中,其中氧气 气体和第一量的氯气通过第一温度被供应,然后在第一温度下加热半导体衬底,使得通过热氧化从第一窗口暴露的半导体衬底的表面来生长第一选择性氧化物膜,形成第二 通过图案化氧化防止层,并将半导体衬底放置在第二气氛中,在第二气氛中,将氧气和大于第一量的第二量的氯气供给到第二气氛中,然后在 第二温度使得形成第二选择性氧化物膜,并且形成第一选择性氧化物膜的厚度 增强了形成在第一窗口下方的氧化膜。 因此,在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中,可以防止在选择性氧化物膜的鸟嘴上产生投影。

    Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide
    2.
    发明授权
    Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide 有权
    包括具有不同浓度的氯的各种氧化步骤以形成场氧化物的半导体器件制造方法

    公开(公告)号:US06187640B1

    公开(公告)日:2001-02-13

    申请号:US09193252

    申请日:1998-11-17

    IPC分类号: H01L21336

    CPC分类号: H01L21/76221

    摘要: In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.

    摘要翻译: 在制造半导体器件的方法中,包括在半导体衬底的表面上形成氧化防止层的步骤,在氧化防止层中形成第一窗口,将半导体衬底放置在第一气氛中,其中氧气 并且在第一温度下通过第一量的氯气供应第一量的氯气,然后在第一温度下加热第一选择性氧化物膜,以便通过热氧化从第一窗口露出的半导体衬底的表面生长第一选择性氧化物膜,形成第二窗口 通过图案化氧化防止层,并且将半导体衬底放置在第二气氛中,在第二气氛中,将氧气和大于第一量的第二量的氯气供给到第二气氛中,然后再次加热半导体衬底 温度使得形成第二选择性氧化物膜,并且第一选择性氧化物膜的厚度 在第一窗口下方形成的底片增强。 因此,在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中,可以防止在选择性氧化物膜的鸟嘴上产生投影。

    Method of fabricating an EPROM type device with reduced process residues
    3.
    发明授权
    Method of fabricating an EPROM type device with reduced process residues 失效
    制造具有减少的工艺残留物的EPROM型器件的方法

    公开(公告)号:US5950086A

    公开(公告)日:1999-09-07

    申请号:US878119

    申请日:1997-06-18

    CPC分类号: H01L27/115

    摘要: A semiconductor device is fabricated by the step of forming a first device isolation film in a peripheral circuit region by the use of a first pattern and a second device isolation film in a memory cell region by the use of a second pattern; forming a first conducting film processed by the use of a third pattern having a pattern-to-be-removed in a peripheral edge of the memory cell region; the step of forming an insulation film covering the memory cell region and processed by the use of a fourth pattern whose peripheral edge is positioned on the pattern-to-be-removed of the third pattern; and the step of forming a second conducting film processed by a fifth pattern.

    摘要翻译: 通过使用第二图案在存储单元区域中通过使用第一图案和第二器件隔离膜在外围电路区域中形成第一器件隔离膜的步骤来制造半导体器件; 形成通过使用在存储单元区域的外围边缘中具有要去除的图案的第三图案处理的第一导电膜; 形成覆盖存储单元区域并通过使用周边位于第三图案的图案上的第四图案进行处理的绝缘膜的步骤; 以及形成通过第五图案处理的第二导电膜的步骤。

    Nonvolatile semiconductor memory device and method of reproducing data
of nonvolatile semiconductor memory device
    4.
    发明授权
    Nonvolatile semiconductor memory device and method of reproducing data of nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件和再现非易失性半导体存储器件的数据的方法

    公开(公告)号:US5999448A

    公开(公告)日:1999-12-07

    申请号:US223281

    申请日:1998-12-30

    摘要: There is provided a nonvolatile semiconductor memory device which has a floating gate electrode and writes data by injecting electrons into the floating gate electrode by applying a voltage to a control gate electrode and erases the data by extracting the electrons from the floating gate electrode. The nonvolatile semiconductor memory device which includes a plurality of word lines, a plurality of bit lines intersecting with the plurality of word lines, and a plurality of memory elements each of which is connected to a word line and a bit line at a location where the word line and the bit line are intersected with each other, comprises at least one monitor bit line which intersects with the word lines, and a plurality of monitor elements which are connected to the monitor bit line and the plurality of word lines at locations where the monitor bit line and the plurality of word lines are intersected with each other.

    摘要翻译: 提供了一种非易失性半导体存储器件,其具有浮置栅极电极,并通过向控制栅电极施加电压并将电子注入到浮置栅极电极中来写入数据,并通过从浮置栅电极提取电子来擦除数据。 所述非易失性半导体存储器件包括多个字线,与所述多个字线相交的多个位线,以及多个存储元件,每个所述存储元件连接到字线和位线, 字线和位线彼此相交,包括与字线相交的至少一个监视位线,以及多个监视元件,其连接到监视器位线,并且多个字线在 监视位线和多个字线彼此相交。

    Non-volatile semiconductor memory and method of manufacturing the same

    公开(公告)号:US20060249771A1

    公开(公告)日:2006-11-09

    申请号:US11480553

    申请日:2006-07-05

    IPC分类号: H01L21/8242 H01L29/94

    摘要: A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.

    Information recording and reproducing apparatus having an emergency
conveying device for moving a carriage member to an ejecting port
    6.
    发明授权
    Information recording and reproducing apparatus having an emergency conveying device for moving a carriage member to an ejecting port 失效
    信息记录和重放装置具有用于将滑架构件移动到排出口的应急传送装置

    公开(公告)号:US5150352A

    公开(公告)日:1992-09-22

    申请号:US412333

    申请日:1989-09-26

    申请人: Hideo Kurihara

    发明人: Hideo Kurihara

    CPC分类号: G06K13/0843 G11B25/04

    摘要: An information recording and reproducing apparatus according to the invention includes an emergency conveying device for conveying an information recording medium on a carriage member from an information recording and/or reproducing position to an ejecting port. The emergency conveying device includes a device for moving the carriage member to the ejecting port by coming into engagement with the carriage member. A gear (20) is manually actuated in case of a power failure so as to manually move the carriage (3) toward the discharge area.

    摘要翻译: 根据本发明的信息记录和再现装置包括一个紧急输送装置,用于将信息记录介质从信息记录和/或再现位置传送到排出口。 紧急输送装置包括用于通过与滑架构件接合而将滑架构件移动到排出口的装置。 在断电的情况下手动地驱动齿轮(20),以便手动地将滑架(3)移动到排放区域。

    Fiber-Reinforced Thermoplastic Resin Composition and Process for Producing Fiber-Reinforced Thermoplastic Resin Composition
    8.
    发明申请
    Fiber-Reinforced Thermoplastic Resin Composition and Process for Producing Fiber-Reinforced Thermoplastic Resin Composition 审中-公开
    纤维增强热塑性树脂组合物和生产纤维增强热塑性树脂组合物的方法

    公开(公告)号:US20130123388A1

    公开(公告)日:2013-05-16

    申请号:US13810101

    申请日:2011-07-13

    摘要: Provided are a fiber-reinforced thermoplastic resin composition excellent in terms of dispersion property, moldability, rigidity, and reinforcing property and a process for producing the resin composition. This fiber-reinforced thermoplastic resin composition comprises (a) a polyolefin, (b) a rubbery polymer, (c) spherical silica having a water content of 1,000 ppm or less, (d) ultrafine fibers of a thermoplastic polymer having amide groups in the main chain, and (e) a silane coupling agent, wherein the ingredient (d) has been dispersed as ultrafine fibers having an average diameter of 1 [mu]m or less in a matrix comprising the ingredients (a), (b), and (c), and the ingredients (a), (b), (c), and (d) have been chemically bonded through the ingredient (e).

    摘要翻译: 提供了在分散性,成型性,刚性和增强性方面优异的纤维增强热塑性树脂组合物和制备树脂组合物的方法。 该纤维增强热塑性树脂组合物包含(a)聚烯烃,(b)橡胶状聚合物,(c)水分含量为1,000ppm以下的球形二氧化硅,(d)具有酰胺基的热塑性聚合物的超细纤维 主链和(e)硅烷偶联剂,其中成分(d)已经在包含成分(a),(b),(b)的基质中分散为平均粒径为1μm以下的超细纤维, 和(c),成分(a),(b),(c)和(d)通过成分(e)化学键合。

    Apparatus having mechanism for cleaning information record medium
    9.
    发明授权
    Apparatus having mechanism for cleaning information record medium 失效
    具有清理信息记录媒体的机构的装置

    公开(公告)号:US5428213A

    公开(公告)日:1995-06-27

    申请号:US151364

    申请日:1993-11-12

    申请人: Hideo Kurihara

    发明人: Hideo Kurihara

    IPC分类号: G11B23/50 G06K13/00

    CPC分类号: G06K13/0893 G11B23/50

    摘要: An information recording medium cleaning device includes moving the recording medium and the cleaning device relative to each other and a detection device for detecting a degree of stain caused by dust, fingerprints or oil, for example, on the information recording medium. Cleaning is performed based on the degree of stain detected on the information recording medium.

    摘要翻译: 信息记录介质清洁装置包括相对于彼此移动记录介质和清洁装置,以及用于检测例如在信息记录介质上的灰尘,指纹或油引起的污染程度的检测装置。 基于在信息记录介质上检测到的污渍程度进行清洗。