摘要:
A semiconductor device is fabricated by the step of forming a first device isolation film in a peripheral circuit region by the use of a first pattern and a second device isolation film in a memory cell region by the use of a second pattern; forming a first conducting film processed by the use of a third pattern having a pattern-to-be-removed in a peripheral edge of the memory cell region; the step of forming an insulation film covering the memory cell region and processed by the use of a fourth pattern whose peripheral edge is positioned on the pattern-to-be-removed of the third pattern; and the step of forming a second conducting film processed by a fifth pattern.
摘要:
In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
摘要:
In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
摘要:
There is provided a nonvolatile semiconductor memory device which has a floating gate electrode and writes data by injecting electrons into the floating gate electrode by applying a voltage to a control gate electrode and erases the data by extracting the electrons from the floating gate electrode. The nonvolatile semiconductor memory device which includes a plurality of word lines, a plurality of bit lines intersecting with the plurality of word lines, and a plurality of memory elements each of which is connected to a word line and a bit line at a location where the word line and the bit line are intersected with each other, comprises at least one monitor bit line which intersects with the word lines, and a plurality of monitor elements which are connected to the monitor bit line and the plurality of word lines at locations where the monitor bit line and the plurality of word lines are intersected with each other.
摘要:
A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.
摘要:
An information recording and reproducing apparatus according to the invention includes an emergency conveying device for conveying an information recording medium on a carriage member from an information recording and/or reproducing position to an ejecting port. The emergency conveying device includes a device for moving the carriage member to the ejecting port by coming into engagement with the carriage member. A gear (20) is manually actuated in case of a power failure so as to manually move the carriage (3) toward the discharge area.
摘要:
A reinforced rubber composition comprising 100 parts by weight of a vulcanizable rubber including 1 to 100 parts by weight of fine short fibers of a fiber forming polyamide buried therein, and the polyamide and the rubber are bonded through a silane coupling agent. This reinforced rubber composition is suitable for use as automobile tires and the parts thereof and rubber products such as, rubber houses, rubber belts, rubber parts for automobiles, and footwear materials.
摘要:
Provided are a fiber-reinforced thermoplastic resin composition excellent in terms of dispersion property, moldability, rigidity, and reinforcing property and a process for producing the resin composition. This fiber-reinforced thermoplastic resin composition comprises (a) a polyolefin, (b) a rubbery polymer, (c) spherical silica having a water content of 1,000 ppm or less, (d) ultrafine fibers of a thermoplastic polymer having amide groups in the main chain, and (e) a silane coupling agent, wherein the ingredient (d) has been dispersed as ultrafine fibers having an average diameter of 1 [mu]m or less in a matrix comprising the ingredients (a), (b), and (c), and the ingredients (a), (b), (c), and (d) have been chemically bonded through the ingredient (e).
摘要:
An information recording medium cleaning device includes moving the recording medium and the cleaning device relative to each other and a detection device for detecting a degree of stain caused by dust, fingerprints or oil, for example, on the information recording medium. Cleaning is performed based on the degree of stain detected on the information recording medium.
摘要:
A reinforced rubber composition comprising 100 parts by weight of a vulcanizable rubber including 1 to 100 parts by weight of fine short fibers of a fiber forming polyamide buried therein, and the polyamide and the rubber are bonded through a silane coupling agent. This reinforced rubber composition is suitable for use as automobile tires and the parts thereof and rubber products such as, rubber houses, rubber belts, rubber parts for automobiles, and footwear materials.