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公开(公告)号：US5105134A
公开(公告)日：1992-04-14
申请号：US655589
申请日：1991-02-15
CPC分类号： B60S1/482 , Y10S318/02
摘要： A wiper apparatus comprises a wiper switch, a washer motor, a washer switch for actuating the washer motor by its on-operation, a wiper motor actuated independently by on-operation of the wiper switch and interlockingly with the washer motor by the on-operation of the washer switch, and a controller for maintaining the wiper motor to rotate until the load applied on the wiper motor reaches predetermined value. According to this invention, the wiper blade never stops before the cleaning liquid is removed from the wiping surface by detecting frictional resistance between the wiper blade and the wiping surface as the motor load.
摘要翻译： 刮水器装置包括刮水器开关，洗衣机马达，用于通过其操作来驱动洗衣机马达的洗衣机开关，通过刮水器开关的操作而独立地致动的刮水器马达，并且通过开启操作与洗衣机马达互锁 以及用于保持刮水器马达旋转直到施加到刮水器马达上的载荷达到预定值的控制器。 根据本发明，通过检测作为电动机负载的刮水片和擦拭面之间的摩擦阻力，在擦拭液体从擦拭表面上除去之前，刮片永不停止。
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公开(公告)号：US07785697B2
公开(公告)日：2010-08-31
申请号：US11819263
申请日：2007-06-26
申请人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
发明人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
IPC分类号： B32B3/02
CPC分类号： H01L23/5227 , H01F17/0033 , H01F41/042 , H01F2017/0073 , H01L2924/0002 , Y10T428/24521 , Y10T428/24612 , H01L2924/00
摘要： The present invention provides a thin film device in which resin film does not easily separate. In a thin film device, a conductor pattern is formed on one of the main surfaces of a plate-shaped base, and the conductor pattern is covered with a resin film. This conductor pattern has a bottom face disposed on the main surface of the base, a top face that faces the bottom face and is distant from the main surface of the base, and two side faces that connect the bottom face and the top face. A depressed portion is formed in these side faces, and an insulation film extends into the depressed portion.
摘要翻译： 本发明提供一种薄膜器件，其中树脂膜不容易分离。 在薄膜器件中，在板状基体的一个主表面上形成导体图案，并且用树脂膜覆盖导体图案。 该导体图案具有设置在基座的主表面上的底面，面向底面并远离基座的主表面的顶面以及连接底面和顶面的两个侧面。 在这些侧面形成有凹部，绝缘膜延伸到凹部。
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公开(公告)号：US20090184336A1
公开(公告)日：2009-07-23
申请号：US12170503
申请日：2008-07-10
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
IPC分类号： H01L33/00
摘要： A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.
摘要翻译： 一种半导体发光器件包括：半导体层; 半导体层上的绝缘膜，并具有开口; 绝缘膜上的多层粘合剂层; 以及通过开口与半导体层接触并与多层粘合剂层接触的Pd电极。 多层粘合剂层包括顶部的Au层和在Au层和Pd电极之间的界面处的Au和Pd的合金。
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公开(公告)号：US20080211062A1
公开(公告)日：2008-09-04
申请号：US11681235
申请日：2007-03-02
IPC分类号： H01L29/20 , H01L21/20 , H01L21/283
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。
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公开(公告)号：US20060175788A1
公开(公告)日：2006-08-10
申请号：US11324788
申请日：2006-01-03
申请人： Kazunobu Nuno , Kazunari Azuchi , Kiyohito Gyobu , Hitoshi Sakuma
发明人： Kazunobu Nuno , Kazunari Azuchi , Kiyohito Gyobu , Hitoshi Sakuma
IPC分类号： B60G3/20
CPC分类号： B60G3/20 , B60G7/001 , B60G11/14 , B60G2200/144 , B60G2202/12 , B60G2204/1244 , B60G2204/129 , B60G2204/143 , B60G2204/148 , B60G2204/41 , B60G2204/416 , B60G2206/012 , B60G2206/10 , B60G2206/162 , B60G2206/7102 , B60G2206/8102 , B60G2206/8103 , B60G2206/8105 , Y10T29/49622
摘要： A suspension arm made of an aluminum alloy extruded profile having a portion forming a bottom portion, portions forming at least two vertical walls, and a horizontal rib which connects the two vertical walls, wherein a suspension part lower end support portion is formed between the two vertical walls or at the bottom portion by removing a part of the horizontal rib. It is preferable to gradually change the interval between the two vertical walls in the portion in which the horizontal rib is removed.
摘要翻译： 一种由铝合金挤压型材制成的悬臂，其具有形成底部的部分，形成至少两个垂直壁的部分和连接两个垂直壁的水平肋，其中悬挂部分下端支撑部分形成在两者之间 垂直壁或在底部，通过移除水平肋的一部分。 优选地，在水平肋被去除的部分中逐渐改变两个垂直壁之间的间隔。
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6.发明授权Piezoelectric device having first and second non-metal electroconductive intermediate films 有权具有第一和第二非金属导电中间膜的压电器件公开(公告)号：US08994251B2
公开(公告)日：2015-03-31
申请号：US13566468
申请日：2012-08-03
IPC分类号： H01L41/047
CPC分类号： H01L41/0478 , B41J2/14233 , H01L41/0477 , H01L41/0815 , H01L41/1873 , H01L41/313 , H01L41/316
摘要： A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.
摘要翻译： 根据本发明的压电装置设置有第一电极膜，设置在第一电极膜上的第一非金属导电中间膜，设置在第一非金属导电中间膜上的压电膜，设置在第一非金属导电中间膜上的第二非金属导电中间膜 压电膜和设置在第二非金属导电中间膜上的第二电极膜。 第一非金属导电性中间膜的线膨胀系数比第一电极膜和压电膜的线膨胀系数大，第二非金属导电性中间膜的线膨胀系数比第二电极膜和压电膜的线膨胀系数大 。
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7.发明授权公开(公告)号：US08981627B2
公开(公告)日：2015-03-17
申请号：US13487563
申请日：2012-06-04
IPC分类号： H01L41/08 , H01L41/047
CPC分类号： H01L41/0815 , H01L41/0477
摘要： A piezoelectric device has a first electrode film, a piezoelectric film provided on the first electrode film, and a second electrode film provided on the piezoelectric film. At least one of the pair of electrode films is composed of an alloy, and a major component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn.
摘要翻译： 压电器件具有第一电极膜，设置在第一电极膜上的压电膜和设置在压电膜上的第二电极膜。 一对电极膜中的至少一个由合金构成，合金的主要成分为选自Ti，Al，Mg，Zn的金属。
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8.发明申请公开(公告)号：US20110193126A1
公开(公告)日：2011-08-11
申请号：US12911772
申请日：2010-10-26
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
IPC分类号： H01L33/40 , H01L21/283
CPC分类号： H01S5/32341 , H01L33/20 , H01L33/385 , H01L2933/0016 , H01S5/0425 , H01S5/22
摘要： A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.
摘要翻译： 半导体发光元件包括：半导体衬底; 半导体层叠结构，其包括依次层叠在所述半导体基板上的第一导电型半导体层，有源层，第二导电型半导体层和接触层; 半导体层叠结构的上部的脊部; 邻接所述脊部的相对侧的通道部分; 邻接通道部分的相对侧的平台部分，以及通道部分，夹住所述脊部; 覆盖所述通道部分并且在所述脊部和所述平台部分上具有开口的第一绝缘膜; 第一绝缘膜上的单层粘合剂层; 脊状部分上的Pd电极和单层粘合剂层的一部分，并且电连接到脊部的接触层; 以及覆盖单层粘合剂层的Pd电极未被覆盖的部分的第二绝缘层和露台部。
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公开(公告)号：US20110163512A1
公开(公告)日：2011-07-07
申请号：US12811416
申请日：2009-09-07
申请人： Takeshi Komoto , Hitoshi Sakuma , Takashi Hirano , Hiroyuki Mizuno , Shinya Teramoto , Masahiro Toda , Hiromasa Takada , Makoto Okonogi
发明人： Takeshi Komoto , Hitoshi Sakuma , Takashi Hirano , Hiroyuki Mizuno , Shinya Teramoto , Masahiro Toda , Hiromasa Takada , Makoto Okonogi
CPC分类号： B62D7/20 , B60G7/001 , B60G2206/11 , B60G2206/8401 , B60G2206/8402 , C21D1/25 , C21D9/0068 , C21D9/0075 , C21D2211/008 , C21D2221/01
摘要： A steel tie rod end includes a shaft portion and first and second fitting portions. A minimum area portion having a small radially cross-sectional area is provided for the shaft portion, and 90% or above of a steel structure of the minimum area portion is formed of martensite or tempered martensite. The surface hardness of the minimum area portion and the average hardness of the radial cross section of the minimum area portion are 600 Hv or below, and the average hardness of the radial cross section of the first fitting portion and the average hardness of the radial cross section of the second fitting portion are 300 Hv or below. A method of manufacturing a steel tie rod end includes a quenching process of heating only a prospective shaft portion by high frequency to an austenitizing temperature and then rapidly cooling the prospective shaft portion by water or cooling medium.
摘要翻译： 钢制拉杆端部包括轴部和第一和第二配合部。 为轴部设置径向截面积较小的最小面积部，最小面积部的钢结构的90％以上由马氏体或回火马氏体形成。 最小面积部分的最小面积部分的表面硬度和最小面积部分的径向横截面的平均硬度为600Hv或以下，第一装配部分的径向横截面的平均硬度和径向横截面的平均硬度 第二装配部的截面为300Hv以下。 制造钢制拉杆端的方法包括将高频加热到奥氏体化温度的预期轴部的淬火工序，然后用水或冷却介质快速冷却前轴部。
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公开(公告)号：US07897418B2
公开(公告)日：2011-03-01
申请号：US12331515
申请日：2008-12-10
IPC分类号： H01L21/60 , H01L29/15 , H01L31/0256 , H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00 , G01R31/26
摘要： A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.
摘要翻译： 一种半导体发光器件的制造方法，包括在半导体衬底上形成绝缘膜，所述绝缘膜在其中具有开口，在所述开口和所述绝缘膜上形成Pd电极，并且在所述绝缘膜上除去所述Pd电极的所述部分 通过对该部分施加物理力，同时将Pd电极留在开口中。
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