公开(公告)号：US20120001302A1

公开(公告)日：2012-01-05

申请号：US13254668

申请日：2010-03-05

申请人： Hisashi Matsumura ,  Shunro Fuke ,  Yasuo Kanematsu ,  Kazuyoshi Itoh

发明人： Hisashi Matsumura ,  Shunro Fuke ,  Yasuo Kanematsu ,  Kazuyoshi Itoh

IPC分类号： H01L29/06 ,  B05C21/00 ,  B05C11/00 ,  H01L21/36

CPC分类号： G02B6/132 ,  C23C16/0218 ,  C23C16/042 ,  C23C16/047 ,  C23C16/34 ,  C30B25/00 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642

摘要： An apparatus (100) for fabricating a semiconductor thin film includes: substrate surface pretreatment means (101) for pretreating a surface of a substrate; organic layer coating means (102) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means (103) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means (104) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means (105) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means (106) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

摘要翻译： 一种用于制造半导体薄膜的设备（100）包括：用于预处理衬底表面的衬底表面预处理装置（101） 有机层涂覆装置（102），用于用有机层涂覆由此预处理的基材; 聚焦光照射装置（103），用聚焦光照射涂覆有机层的基材，并在控制层厚度的同时形成生长掩模层; 第一薄膜生长装置（104），用于在生长掩模层周围的区域上选择性地生长半导体薄膜; 衬底表面处理装置（105），用于通过去除生长掩模层来暴露衬底的表面，改变衬底的暴露表面; 和第二薄膜生长装置（106），用于进一步生长半导体薄膜并在衬底的改性表面上生长半导体薄膜。

公开(公告)号：US08673748B2

公开(公告)日：2014-03-18

申请号：US13254668

申请日：2010-03-05

申请人： Hisashi Matsumura ,  Shunro Fuke ,  Yasuo Kanematsu ,  Kazuyoshi Itoh

发明人： Hisashi Matsumura ,  Shunro Fuke ,  Yasuo Kanematsu ,  Kazuyoshi Itoh

IPC分类号： H01L21/20

CPC分类号： G02B6/132 ,  C23C16/0218 ,  C23C16/042 ,  C23C16/047 ,  C23C16/34 ,  C30B25/00 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642

摘要： An apparatus (100) for fabricating a semiconductor thin film includes: substrate surface pretreatment means (101) for pretreating a surface of a substrate; organic layer coating means (102) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means (103) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means (104) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means (105) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means (106) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

摘要翻译： 一种用于制造半导体薄膜的设备（100）包括：用于预处理衬底表面的衬底表面预处理装置（101） 有机层涂覆装置（102），用于用有机层涂覆由此预处理的基材; 聚焦光照射装置（103），用聚焦光照射涂覆有机层的基材，并在控制层厚度的同时形成生长掩模层; 第一薄膜生长装置（104），用于在生长掩模层周围的区域上选择性地生长半导体薄膜; 衬底表面处理装置（105），用于通过去除生长掩模层来暴露衬底的表面，改变衬底的暴露表面; 和第二薄膜生长装置（106），用于进一步生长半导体薄膜并在衬底的改性表面上生长半导体薄膜。

公开(公告)号：US08888914B2

公开(公告)日：2014-11-18

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01J9/12 ,  H01J1/34 ,  H01J40/06

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US20070132050A1

公开(公告)日：2007-06-14

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L27/14

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20070042560A1

公开(公告)日：2007-02-22

申请号：US10562265

申请日：2004-06-15

申请人： Masatomo Sumiya ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Shunro Fuke

IPC分类号： H01L21/76

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40

摘要： The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1) , the Ga face (2) growing in +c face, and the N face (3) growing in −c face.

摘要翻译： 本发明提供一种用于在衬底上生长薄氮化物膜的方法和薄氮化物膜器件，其中可以通过低温工艺来控制薄氮化物膜的极性。 在用于在衬底上生长薄氮化物膜的方法中，在交流面蓝宝石（Al 2 O 3 3 ）衬底（1），Ga面（2）在+ c面生长，N面（3）生长在-c面。

公开(公告)号：US06239005B1

公开(公告)日：2001-05-29

申请号：US09275453

申请日：1999-03-24

申请人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

IPC分类号： H01L2136

CPC分类号： H01S5/0213 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/465 ,  H01S5/0425 ,  H01S5/18375 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700° C. After annealing at 600-900° C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 Å by MOVPE, while the sapphire substrate is heated at about 600° C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000° C.

摘要翻译： 在直接在金属层上形成单晶半导体的方法中，在具有单晶结构的电绝缘基板的表面上外延生长金属层，并且在金属层上外延生长单晶半导体层。 特别地，在蓝宝石衬底的c面上，通过溅射以（111）的晶体取向外延生长铂层，同时蓝宝石衬底在约400-700℃下加热。在600-900°退火后 通过MOVPE在厚度为500-2000的铂层上外延生长由氮化镓制成的缓冲层，同时蓝宝石衬底在约600℃下加热。最后，单晶氮化镓层外延生长 通过MOVPE在缓冲层上生长，而蓝宝石衬底在约1000℃下加热。

公开(公告)号：US20090065786A1

公开(公告)日：2009-03-12

申请号：US11909361

申请日：2006-03-14

申请人： Masatomo Sumiya ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Shunro Fuke

IPC分类号： H01L29/20 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/02661

摘要： A method for growing a nitride thin film on a sapphire substrate, in which using no resists, miniaturization can be accomplished while relieving vexatious complication of the process; and a relevant device using nitride thin film. There is provided a method for growing a nitride thin film on a sapphire substrate, comprising irradiating a sapphire substrate having undergone high temperature hydrogen treatment with electron beams and depositing a nitride thin film on the substrate having undergone the electron beam irradiation by using the metal-organic chemical vapor deposition technique to thereby accomplish patterning of nitride thin film.

摘要翻译： 可以实现在蓝宝石衬底上生长氮化物薄膜的方法，其中不使用抗蚀剂，可以实现微小化，同时缓解该方法的无理征并发症; 以及使用氮化物薄膜的相关装置。 提供了一种在蓝宝石衬底上生长氮化物薄膜的方法，包括用电子束照射已经经过高温氢处理的蓝宝石衬底，并在经过电子束照射的衬底上沉积氮化物薄膜， 有机化学气相沉积技术，从而实现氮化物薄膜的图案化。

公开(公告)号：US07820246B2

公开(公告)日：2010-10-26

申请号：US10562265

申请日：2004-06-15

申请人： Masatomo Sumiya ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Shunro Fuke

IPC分类号： H01L21/76

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40

摘要： The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in −c face.

摘要翻译： 本发明提供一种用于在衬底上生长薄氮化物膜的方法和薄氮化物膜器件，其中可以通过低温工艺来控制薄氮化物膜的极性。 在用于在衬底上生长薄氮化物膜的方法中，在交流面蓝宝石（Al2O3）衬底（1）上形成Ga面（2）和N面（3），Ga面（2）生长在+ c 面对，而N面（3）在-c面上生长。

公开(公告)号：US20100197069A1

公开(公告)日：2010-08-05

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： H01L31/18 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US07525131B2

公开(公告)日：2009-04-28

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/12 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/15 ,  H01L33/00 ,  H01L29/74 ,  H01L31/062 ,  H01L31/00

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。