公开(公告)号：US20130174868A1

公开(公告)日：2013-07-11

申请号：US13824946

申请日：2011-09-26

申请人： Hisashi Muraoka ,  Toshitsura Cho

发明人： Hisashi Muraoka ,  Toshitsura Cho

IPC分类号： B01J20/10

CPC分类号： B01J20/10 ,  B01J20/0251 ,  B01J20/28035 ,  H01L21/02052 ,  H01L29/1608

摘要： Provided are a purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, which use adsorption purification means that can purify various alkaline treatment liquids to be used for treating semiconductor substrates for various purposes so as to have an ultrahigh purity, in particular, an Fe concentration in a ppq region, and that is excellent in chemical resistance and mechanical strength. The adsorption purification means is purification means for an alkaline treatment liquid for treating a semiconductor substrate for various purposes at the time of producing, for example, a semiconductor substrate or a semiconductor device. In the purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, an alkaline treatment liquid is brought into contact with silicon carbide crystal surfaces in the absorption purification means, for example, an alkaline treatment liquid is allowed to flow through a gap between adsorbing plate laminates (2) whose both surfaces are CVD silicon carbide surfaces, thereby removing metal impurities contained in the alkaline treatment liquid through adsorption of the metal impurities to the silicon carbide crystal surfaces.

摘要翻译： 提供一种用于半导体基板的碱性处理液的净化方法和净化装置，其使用能够净化用于各种目的的半导体基板处理的各种碱处理液以具有超高纯度的吸附净化装置，特别是 ，ppq区域的Fe浓度，耐化学性和机械强度优异。 吸附净化装置是用于在制造例如半导体衬底或半导体器件时用于处理用于各种目的的半导体衬底的碱性处理液的净化装置。 在用于半导体衬底的碱性处理液的净化方法和净化装置中，碱性处理液与吸收净化装置中的碳化硅晶体表面接触，例如使碱性处理液体流过间隙 在两面为CVD碳化硅表面的吸附板层叠体（2）之间，通过将金属杂质吸附到碳化硅晶体表面，除去碱处理液中所含的金属杂质。

公开(公告)号：US06696228B2

公开(公告)日：2004-02-24

申请号：US10274153

申请日：2002-10-21

申请人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

发明人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  B08B3/02 ,  B08B3/04 ,  B08B2203/005 ,  C09D9/005 ,  C11D7/266 ,  C11D11/0047 ,  G03F7/423

摘要： A method and an apparatus for removing an organic film such as a resist film from a substrate surface are provided. These are very safe even at high temperatures, and use a treatment liquid which can be recycled and reused. A treatment liquid typically formed from liquid ethylene carbonate, propylene carbonate, or a liquid mixture of these two compounds, and in particular such a treatment liquid containing dissolved ozone, is contacted with a substrate with an organic film, and the organic film is removed. Furthermore, an apparatus of the present invention (A) a treatment liquid delivery device for transporting the treatment liquid to a treatment area, (B) a film contact device for bringing the treatment liquid into contacting with the organic film surface of the substrate within the treatment area, (C) a liquid circulation device for recycling treatment liquid discharged from the treatment area and returning the recycled liquid to the treatment area via one or more temporary storage devices, and (D) an ozone dissolution device for bringing ozone containing gas into contact with the treatment liquid either within the treatment area and/or within the temporary storage devices.

摘要翻译： 提供了从基板表面去除诸如抗蚀剂膜的有机膜的方法和装置。 即使在高温下，这些也是非常安全的，并且使用可被回收和重复使用的处理液。 通常由液体碳酸亚乙酯，碳酸亚丙酯或这两种化合物的液体混合物形成的处理液体，特别是含有溶解臭氧的这种处理液体与有机膜与基材接触，并除去有机膜。 此外，本发明的装置（A）是将处理液输送到处理区域的处理液输送装置，（B）将处理液与基板的有机膜表面接触的膜接触装置， 处理区域，（C）用于再循环处理区域排出的处理液体的液体循环装置，并且经由一个或多个临时存储装置将再循环液体返回到处理区域，以及（D）将含臭氧气体的臭氧溶解装置 在处理区域内和/或临时存储装置内与处理液体接触。

公开(公告)号：US4515755A

公开(公告)日：1985-05-07

申请号：US368440

申请日：1982-04-14

申请人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

发明人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

IPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  C30B15/34

CPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  Y10S117/90 ,  Y10T117/1032

摘要： An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

摘要翻译： 一种通过使用晶种的上拉工艺从熔融硅生产硅单晶的装置，其中与熔融硅接触的装置的至少一部分包括从气相沉淀的氮化硅层，并且包含20％或 β相以上，或者包含80％以上的α晶相，其晶粒的晶粒直径为5μm以上，比例为10％以上。

公开(公告)号：US4239661A

公开(公告)日：1980-12-16

申请号：US927139

申请日：1978-07-21

申请人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

发明人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

IPC分类号： C11D3/30 ,  C23G1/14 ,  H01L21/306 ,  C11D3/26 ,  C11D7/32

CPC分类号： H01L21/02052 ,  C11D3/30 ,  C23G1/14

摘要： A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.

摘要翻译： 由0.01〜20重量％的三烷基（羟烷基）氢氧化铵的水溶液形成的表面处理剂。 处理剂适于用于有效去除沉积在制造半导体器件的各个步骤中获得的中间半导体产品的表面上的有机和无机污染物以及用作布线的金属层的有效蚀刻。 此外，其可以用于通过控制其浓度来消除涂覆在中间半导体产品的表面上并且不暴露于光的正性光致抗蚀剂膜的那些部分。

公开(公告)号：US06851873B2

公开(公告)日：2005-02-08

申请号：US10683288

申请日：2003-10-14

申请人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

发明人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

IPC分类号： G02F1/13 ,  B08B3/02 ,  B08B3/04 ,  C09D9/00 ,  C11D7/26 ,  C11D11/00 ,  G02F1/1333 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/3065 ,  G03D5/00

CPC分类号： G03F7/422 ,  B08B3/02 ,  B08B3/04 ,  B08B2203/005 ,  C09D9/005 ,  C11D7/266 ,  C11D11/0047 ,  G03F7/423

摘要： A method and an apparatus for removing an organic film, such as a resist film, from a substrate surface are provided wherein a treatment liquid containing dissolved ozone, and preferably formed from liquid ethylene or propylene carbonate, or both, is contacted with the substrate having the organic film, and the organic film removed, wherein the apparatus contains (A) a treatment liquid delivery device, (B) a film contact device, (C) a liquid circulation device and (D) an ozone dissolution device.

摘要翻译： 提供了一种从基板表面去除诸如抗蚀剂膜的有机膜的方法和装置，其中将含有溶解的臭氧，优选由液态的乙烯或碳酸亚丙酯形成的处理液或两者都混合的处理液与具有 所述有机膜和有机膜除去，其中，所述装置包含（A）处理液输送装置，（B）膜接触装置，（C）液体循环装置和（D）臭氧溶解装置。

公开(公告)号：US4587928A

公开(公告)日：1986-05-13

申请号：US200546

申请日：1980-10-24

申请人： Toshio Yonezawa ,  Hisashi Muraoka

发明人： Toshio Yonezawa ,  Hisashi Muraoka

IPC分类号： H01L21/673 ,  C30B25/08 ,  C30B25/12 ,  C30B31/10 ,  C30B31/14 ,  H01L21/205 ,  H01L21/304 ,  H01L21/31 ,  B05C11/00

CPC分类号： C30B25/12 ,  C30B25/08 ,  C30B31/10 ,  C30B31/14

摘要： A process tube that is impermeable to impurities for use in the manufacture of semiconductor devices. The process tube is made of sintered silicon carbide and it may optionally be infiltrated with elemental silicon. The inner surface of the process tube includes a layer of high density silicon carbide to prevent diffusion of impurity species through the walls of the process tube.

摘要翻译： 一种用于制造半导体器件的杂质不可渗透的工艺管。 工艺管由烧结碳化硅制成，并且可以任选地用元素硅渗透。 处理管的内表面包括高密度碳化硅层，以防止杂质物质通过处理管的壁扩散。

公开(公告)号：US4339340A

公开(公告)日：1982-07-13

申请号：US213317

申请日：1980-12-05

申请人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

发明人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

IPC分类号： C11D3/30 ,  C23G1/14 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/02052 ,  C11D3/30 ,  C23G1/14

摘要： A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.

摘要翻译： 由0.01〜20重量％的三烷基（羟烷基）氢氧化铵的水溶液形成的表面处理剂。 处理剂适于用于有效去除沉积在制造半导体器件的各个步骤中获得的中间半导体产品的表面上的有机和无机污染物以及用作布线的金属层的有效蚀刻。 此外，其可以用于通过控制其浓度来消除涂覆在中间半导体产品的表面上并且不暴露于光的正性光致抗蚀剂膜的那些部分。

公开(公告)号：US06896927B2

公开(公告)日：2005-05-24

申请号：US10318003

申请日：2002-12-13

申请人： Hisashi Muraoka

发明人： Hisashi Muraoka

IPC分类号： H01L21/304 ,  B08B17/02 ,  H01L21/306 ,  H01L21/316 ,  B05D5/00

CPC分类号： B08B17/02 ,  H01L21/02052

摘要： An electronic device substrate, such as a semiconductor silicon wafer or a liquid crystal glass substrate, with a surface which has just undergone cleaning treatment and which is covered with a clean oxide or nitride film which will readily adsorb organic contaminants is treated with an aqueous solution containing choline, or alternatively a similar substrate which has not been cleaned is treated with a treatment solution comprising a SC-1 solution to which choline has been added. Following drying, a surface concentration of choline of between 5×1010 molecules˜7×1012 molecules/cm2 is adsorbed onto the substrate surface. This treatment suppresses organic contamination of the substrate from the atmosphere. As a result, the surface carbon concentration of an electronic device substrate can be suppressed to a value of no more than approximately 3×1013 atoms/cm2, even for manufacturing processes carried out in typical clean rooms with no chemical filters installed.

摘要翻译： 具有刚刚经过清洗处理并被容易吸附有机污染物的清洁氧化物或氮化物膜覆盖的表面的诸如半导体硅晶片或液晶玻璃基板的电子器件基板用水溶液 或者可替代地，还没有被清洁的类似的基质用包含已加入胆碱的SC-1溶液的处理溶液进行处理。 干燥后，5×10 10分子〜7×10 12分子/ cm 2之间的胆碱的表面浓度被吸附在基材表面上。 这种处理抑制了大气中底物的有机污染。 结果，电子器件衬底的表面碳浓度可以被抑制在不超过约3×10 13原子/ cm 2的值，即使对于所携带的制造工艺 在没有安装化学过滤器的典型洁净室中。

公开(公告)号：US06699330B1

公开(公告)日：2004-03-02

申请号：US09676976

申请日：2000-10-02

申请人： Hisashi Muraoka

发明人： Hisashi Muraoka

IPC分类号： C23G102

CPC分类号： B08B3/08 ,  C11D3/3947 ,  C11D7/265 ,  C11D7/30 ,  C11D11/0023 ,  Y10S134/902

摘要： A method of removing surface-deposited contaminants, comprising bringing an ozone-containing treating solution into contact with the surface of a treating target on which contaminants have deposited. The ozone-containing treating solution comprises an organic solvent having a partition coefficient to ozone in a gas, of 0.6 or more, and ozone having been dissolved in the solvent. Contaminants having deposited on the surfaces of various articles including substrates for electronic devices, such as semiconductor substrates and substrates for liquid crystal display devices can be removed by room-temperature and short-time treatment in a high safety and a good efficiency.

摘要翻译： 一种去除表面沉积的污染物的方法，包括使含臭氧的处理溶液与已经沉积有污染物的处理对象的表面接触。 含臭氧处理溶液包含具有0.6以上臭氧分配系数和臭氧溶解于溶剂中的有机溶剂。 可以通过室温和短时间处理以高安全性和高效率除去沉积在包括诸如半导体衬底的电子器件用基板和液晶显示装置用基板的各种制品的表面上的污染物。

公开(公告)号：US5636256A

公开(公告)日：1997-06-03

申请号：US706363

申请日：1996-08-30

申请人： Tuyoshi Matumura ,  Kunihiro Miyazaki ,  Hisashi Muraoka

发明人： Tuyoshi Matumura ,  Kunihiro Miyazaki ,  Hisashi Muraoka

IPC分类号： G01N23/223 ,  G01R31/26 ,  H01L21/66

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： An apparatus is disclosed which is used for total reflection fluorescent X-ray analysis on a liquid drop-like sample containing very small amounts of impurities. The apparatus comprises a heat-resistant thin sheet containing an element or elements, as a principal component, not detected on total reflection fluorescent X-ray analysis and an x-ray source directing an X-ray as an incident X-ray at a liquid drop-like sample put on the sheet and containing very small amounts of impurities whereby the liquid drop-like sample is evaporated to a dried solid for the total reflection fluorescent X-ray analysis to be performed there.

摘要翻译： 公开了一种用于对含有非常少量杂质的液滴状样品进行全反射荧光X射线分析的装置。 该装置包括耐热薄片，其包含在全反射荧光X射线分析中未检测到的作为主要成分的元素或X射线源，X射线源作为液体的入射X射线 滴入样品放在片材上并含有非常少量的杂质，由此将液滴样品蒸发至干燥的固体，以进行全反射荧光X射线分析。