Automatic magnification correcting system in a projection optical
apparatus
    1.
    发明授权
    Automatic magnification correcting system in a projection optical apparatus 失效
    投影光学装置中的自动放大校正系统

    公开(公告)号:US4666273A

    公开(公告)日:1987-05-19

    申请号:US844263

    申请日:1986-03-25

    IPC分类号: G03F7/20 G03B27/42

    摘要: An apparatus for projecting the image of an object onto a substrate comprises light source means for supplying light energy for illuminating the object, optical means for forming the image of the object on the substrate, the image magnification of the optical means being heated and varied by the light energy from the light source means, means for monitoring the manner in which the light energy is applied to the optical means, means for determining the variation in the image magnification of the optical means in response to the monitor means, and means for adjusting the size of the image formed on the substrate in response to the determining means.

    摘要翻译: 用于将物体的图像投影到基板上的装置包括用于提供用于照射物体的光能的光源装置,用于在基板上形成物体的图像的光学装置,光学装置的图像放大率被加热和变化 来自光源的光能意味着,用于监视光能被施加到光学装置的方式的装置,用于响应于监视装置确定光学装置的图像放大率的变化的装置,以及用于调节装置 响应于确定装置在基板上形成的图像的尺寸。

    Double-conjugate maintaining optical system
    2.
    发明授权
    Double-conjugate maintaining optical system 失效
    双共轭保持光学系统

    公开(公告)号:US4592625A

    公开(公告)日:1986-06-03

    申请号:US469015

    申请日:1983-02-23

    CPC分类号: G03F7/70241 G02B13/22

    摘要: A double-conjugate maintaining optical system for maintaining the conjugate relation between an object and its image even if the distance between the object and the image varies and also maintaining another set of conjugate relation in a predetermined condition includes an afocal system comprising a plurality of lens units, a first positive lens unit disposed on the object side of the afocal system, and a second positive lens unit disposed on the image side of the afocal system. The first positive lens unit is movable relative to the second positive lens unit so that the object is positioned on the focal plane of the first positive lens unit opposite to the afocal system. The afocal system is movable along the optical axis thereof in a predetermined relation with the first positive lens unit.

    摘要翻译: 即使物体与图像之间的距离发生变化并且在预定条件下也保持另一组共轭关系的双重共轭维持光学系统,用于保持物体与其图像之间的共轭关系,包括包括多个透镜的无焦点系统 设置在无焦点系统的物体侧的第一正透镜单元和设置在无焦系统的像侧上的第二正透镜单元。 第一正透镜单元可相对于第二正透镜单元移动,使得物体位于与无焦系统相对的第一正透镜单元的焦平面上。 无焦点系统可以沿其光轴以与第一正透镜单元预定的关系移动。

    Exposure apparatus for production of integrated circuit
    4.
    发明授权
    Exposure apparatus for production of integrated circuit 失效
    曝光装置用于生产集成电路

    公开(公告)号:US4465368A

    公开(公告)日:1984-08-14

    申请号:US335733

    申请日:1981-12-30

    CPC分类号: G03F7/70058 H01L21/30

    摘要: An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.

    摘要翻译: 一种用于制造IC的曝光装置,其包括:被放置在被照明光投射装置曝光的半导体晶片的台上;以及用于在与照明光以大致直角交叉的平面内二维地移动台的装置 。 该改进包括设置有光接收表面的照明检测装置,以及用于将照射检测装置安装在舞台上的装置,使得受光面和要暴露的舞台上的半导体晶片的表面基本相等 高度相对于舞台。

    Exposure method and system for photolithography
    5.
    发明授权
    Exposure method and system for photolithography 失效
    用于光刻的曝光方法和系统

    公开(公告)号:US4734746A

    公开(公告)日:1988-03-29

    申请号:US51236

    申请日:1987-05-12

    IPC分类号: G03F7/20 G03B27/32 G03B27/42

    摘要: An exposure method for photolithography comprises the steps of forming a pattern on a substrate by the use of a first exposure apparatus including a first imaging optical system having a reduction magnification 1/.beta.1 and an image circle of a diameter .phi.1, and forming a second pattern on the substrate on which the first pattern has been formed, by the use of a second exposure apparatus including a second imaging optical system having a reduction magnification 1/.beta.2 different from the reduction magnification 1/.beta.1 and an image circle of a diameter .phi.2, wherein when N is an integer, the conditions that .beta.1.times..phi.1=.beta.2.times..phi.2 and .phi.1=N.times..phi.2 are satisfied.

    摘要翻译: 用于光刻的曝光方法包括以下步骤:通过使用包括具有缩小倍率1 /β1的第一成像光学系统和直径φ1的图像圆的第一曝光装置在基板上形成图案,并且形成 通过使用包括具有不同于缩小倍率1 /β1的缩小倍率1 /β2的第二成像光学系统的第二曝光装置和形成第一图案的图像圆的第二图案, 直径phi 2,其中当N是整数时,满足β1 phi 1 =β2 ph 2和ph 1 = N x ph 2的条件。

    Projection exposure apparatus
    6.
    发明授权
    Projection exposure apparatus 失效
    投影曝光装置

    公开(公告)号:US4748478A

    公开(公告)日:1988-05-31

    申请号:US942369

    申请日:1986-12-16

    摘要: A projection exposure apparatus comprises a wafer stage for supporting a wafer thereon and two-dimensionally moving the wafer along an image plane substantially perpendicular to an optical axis of a projection optical system, first position detecting means for measuring a two-dimensional position of the wafer stage to detect its coordinates with respect to the optical axis of the wafer, a reticle stage for holding different original patterns such that the patterns do not overlap each other and that predetermined central exposure points of the original image patterns are located at predetermined intervals, and for two-dimensionally moving the reticles at a stroke given such that the optical axis of projection passes all central exposure points of the different original patterns, and second position detecting means for detecting a two-dimensional position of the reticle stage according to a coordinate system determined by the first detecting means and a coordinate system having its axes along the same directions as those of the coordinate system determined by the first detecting means.

    摘要翻译: 投影曝光装置包括用于在其上支撑晶片的晶片台,并且沿着基本上垂直于投影光学系统的光轴的像平面二维地移动晶片,第一位置检测装置,用于测量晶片的二维位置 检测其相对于晶片的光轴的坐标,用于保持不同的原始图案的标线片台,使得图案彼此不重叠,并且原始图像图案的预定中心曝光点以预定间隔定位,以及 用于以划线的光轴穿过所述不同原始图案的所有中央曝光点的行程二维地移动所述光罩,以及用于根据坐标系检测所述标线片平台的二维位置的第二位置检测装置 由第一检测装置和具有其轴的坐标系决定 沿着与由第一检测装置确定的坐标系相同的方向。

    Direct reticle to wafer alignment using fluorescence for integrated
circuit lithography
    7.
    发明授权
    Direct reticle to wafer alignment using fluorescence for integrated circuit lithography 失效
    使用荧光进行集成电路光刻的直接光罩到晶圆对准

    公开(公告)号:US5838450A

    公开(公告)日:1998-11-17

    申请号:US457710

    申请日:1995-06-02

    摘要: A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure wavelength. A first detection method images the fluorescence produced in the photoresist by the reticle mark images. A microscope located below the main projection lens produces the image and also images the wafer marks with broadband non-actinic illumination. The second method images the reticle marks in exposure light using a microscope which images and detects the exposure wavelength while maintaining the illumination and detection of the wafer marks. The third method collects directly both the exposure light and fluorescent light that is scattered and reflected from the wafer surface; the presence of wafer alignment marks changes this light collection. Scanning the wafer relative to the reticle produces a signal indicating the relative position of reticle and wafer alignment marks. All three methods provide information for complete field-by-field alignment including offsets, reticle-to-wafer magnification, rotation, and skew for both step-and-repeat and scanning exposure systems.

    摘要翻译: 用于集成电路光刻的掩模对准系统实现了光栅到晶片参考。 位于主投影透镜下方的检测系统检测标线对准标记的图像,同时检测晶片对准标记。 掩模版标记以曝光波长的光照成像。 第一检测方法通过标线图像对在光致抗蚀剂中产生的荧光进行成像。 位于主投影透镜下方的显微镜产生图像,并且还利用宽带非光化照明对晶片标记进行成像。 第二种方法使用显微镜在曝光光下对掩模版标记进行成像,并在保持照明和晶片标记的检测的同时检测曝光波长。 第三种方法直接收集从晶片表面散射和反射的曝光光和荧光; 晶片对准标记的存在会改变这种光集合。 相对于掩模版扫描晶片产生指示标线片和晶片对准标记的相对位置的信号。 所有这三种方法提供了完整的逐场校准的信息,包括步进重复扫描和扫描曝光系统的偏移量,标尺到晶圆倍率,旋转和偏斜。

    Method and apparatus for determining performance characteristics in
lithographic tools
    8.
    发明授权
    Method and apparatus for determining performance characteristics in lithographic tools 失效
    用于确定光刻工具的性能特征的方法和装置

    公开(公告)号:US5835227A

    公开(公告)日:1998-11-10

    申请号:US818375

    申请日:1997-03-14

    摘要: A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.

    摘要翻译: 用于确定光刻工具中的性能特征的方法和装置包括用具有已知预定性能特征的投影系统投影预定图像,以获得指示投影图像的尺寸与预定性能特征之间的关系的数据。 然后将相同的图像投影在具有用于预定性能特征的未知值的系统中。 然后,基于在具有已知的预定性能特征的系统中投影图像时获得的数据来确定所考虑的系统的预定性能特性。

    Wafer inspection method and apparatus using diffracted light
    9.
    发明授权
    Wafer inspection method and apparatus using diffracted light 失效
    使用衍射光的晶片检查方法和装置

    公开(公告)号:US5777729A

    公开(公告)日:1998-07-07

    申请号:US644649

    申请日:1996-05-07

    摘要: Defects in a processed or partly processed semiconductor wafer, or other similar three-dimensional periodic pattern formed on a substrate surface, are detected by light diffraction. Incident monochromatic light is provided from an elongated and extended source to illuminate the entire wafer surface. By use of automated image processing techniques, wafer macro inspection is thereby automated. The elongated and extended light source allows light at different angles to be incident upon each point of the wafer surface, thereby allowing defect detection for an entire wafer surface in a single field of view and reducing inspection time. The particular wavelength of the incident monochromatic light is predetermined to allow optimum detection of defects in the periodic pattern on the wafer, depending on the width and pitch of the features of the periodic pattern.

    摘要翻译: 通过光衍射检测经处理或部分处理的半导体晶片或形成在基板表面上的其它类似三维周期图案的缺陷。 入射单色光从细长的和延伸的源提供,以照亮整个晶片表面。 通过使用自动图像处理技术,晶片宏观检查因此被自动化。 细长的和延伸的光源允许以不同角度的光入射到晶片表面的每个点上,从而允许在单个视场中的整个晶片表面的缺陷检测并减少检查时间。 入射单色光的特定波长是预定的,以允许根据周期性图案的特征的宽度和间距来最佳地检测晶片上的周期性图案中的缺陷。

    Alignment apparatus
    10.
    发明授权
    Alignment apparatus 失效
    校准装置

    公开(公告)号:US4566795A

    公开(公告)日:1986-01-28

    申请号:US586639

    申请日:1984-03-06

    摘要: An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.

    摘要翻译: 用于通过第一和第二参考标记将一个基板与另一个基板对准的对准装置包括扫描装置,其包括用于分别由光束往复扫描第一和第二区域的光束产生装置,用于产生指示 所述第一光电装置用于当所述第一光电装置接收到透过第一区域并被所述第一参考标记分开的光束时产生第一信号;第二光电装置,用于产生第一信号, 第二信号,当第二光电装置接收到通过第二区域传输并被第二参考标记分隔的光束时,用于确定第一和第二参考标记与第一和第二信号之间的相对偏离的方向和量的操作装置,以及 从辨别信号 以及用于响应于操作装置移动基板之一相对于另一个的装置。 对准装置结构简单,可以更精确地检测对准标记。 对准装置使得能够以更高的速度和更高的精度将晶片与掩模版或掩模对准。