Method and apparatus for determining performance characteristics in
lithographic tools
    1.
    发明授权
    Method and apparatus for determining performance characteristics in lithographic tools 失效
    用于确定光刻工具的性能特征的方法和装置

    公开(公告)号:US5835227A

    公开(公告)日:1998-11-10

    申请号:US818375

    申请日:1997-03-14

    摘要: A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.

    摘要翻译: 用于确定光刻工具中的性能特征的方法和装置包括用具有已知预定性能特征的投影系统投影预定图像,以获得指示投影图像的尺寸与预定性能特征之间的关系的数据。 然后将相同的图像投影在具有用于预定性能特征的未知值的系统中。 然后,基于在具有已知的预定性能特征的系统中投影图像时获得的数据来确定所考虑的系统的预定性能特性。

    Distortion inspecting method for projection optical system
    2.
    发明授权
    Distortion inspecting method for projection optical system 失效
    投影光学系统失真检测方法

    公开(公告)号:US5402224A

    公开(公告)日:1995-03-28

    申请号:US126393

    申请日:1993-09-24

    IPC分类号: G03F7/20 G01B11/00

    摘要: A method for inspecting distortion characteristics of a projection optical system to be inspected by arranging a mask formed with measurement patterns at a plurality of predetermined positions on the object surface side of the projection optical system, transferring projected images of the plurality of measurement patterns onto a photosensitive substrate arranged on the image surface side of the projection optical system, and detecting transfer images of the measurement-patterns, includes:the step of exposing a mask, on which pairs of first and second measurement patterns are arranged adjacent to each other to be separated by a predetermined interval .DELTA.T in one direction at positions on the mask corresponding to a plurality of points at which distortion amounts are to be inspected in a projection view field of the projection optical system, onto the photosensitive substrate via the projection optical system;the step of exposing the mask onto the photosensitive substrate via the projection optical system after the mask and the photosensitive substrate are moved relative to each other by an amount determined by the interval .DELTA.T with respect to the state in the preceding step;the step of measuring relative displacements between overlapping images of the first and second measurement patterns at different image height points in the projection view field of the projection optical system; andthe step of calculating a value obtained by sequentially accumulating the measured relative displacements in units of image height values as a distortion amount at the corresponding image height point.

    摘要翻译: 一种用于通过在投影光学系统的物体表面上的多个预定位置处布置形成有测量图案的掩模来检查要检查的投影光学系统的失真特性的方法,将多个测量图案的投影图像转印到 布置在投影光学系统的图像表面侧的感光基板和检测测量图案的转印图像包括:曝光掩模的步骤,第一和第二测量图案对彼此相邻配置成为 通过投影光学系统在投影光学系统的投影视场中将与要在失真量被检查的多个点对应的位置上的一个方向上分离预定间隔DELTA T到感光基板上; 在掩模和感光基板相对于前一步骤中的状态由间隔DELTA T确定的量相对于彼此移动之后,通过投影光学系统将掩模曝光到感光基板上的步骤; 测量投影光学系统的投影视场中不同图像高度点处的第一和第二测量图案的重叠图像之间的相对位移的步骤; 并且计算通过以图像高度值为单位将所测量的相对位移顺序地累积为在相应图像高度点处的失真量而获得的值的步骤。

    Exposure condition measurement method
    3.
    发明授权
    Exposure condition measurement method 失效
    曝光条件测量方法

    公开(公告)号:US5434026A

    公开(公告)日:1995-07-18

    申请号:US989909

    申请日:1992-12-11

    摘要: In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.

    摘要翻译: 在通过使用曝光装置测量以预定能量将形成在其上形成有抗蚀剂图像的感光基板上的掩模曝光的条件的方法中,形成多个 在改变所述曝光条件的同时,将掩模上的位置依次曝光在感光基板上的多个部分区域上。 在改变曝光条件的同时,由于所述处理,第二图案重叠地暴露在形成在所述部分区域中的所述第一图案的至少一部分潜像上。 在显影后在抗蚀剂层上形成抗蚀剂图像的预定状态,使得根据状态测量曝光条件。

    Imaging characteristic and asymetric abrerration measurement of
projection optical system
    4.
    发明授权
    Imaging characteristic and asymetric abrerration measurement of projection optical system 失效
    投影光学系统的成像特征和不对称测量

    公开(公告)号:US5615006A

    公开(公告)日:1997-03-25

    申请号:US469514

    申请日:1995-06-06

    摘要: A method of exposing images of measuring patterns formed on a mask on a photosensitive substrate through a projection optical system, measuring positional deviation quantities of the exposed images of the measuring patterns in a measuring direction and thus measuring imaging characteristics of the projection optical system on the basis of the measured positional deviation quantities. In this method, periodic patterns are used as the measuring patterns, wherein bright and dark portions are arranged at a predetermined pitch in a direction corresponding to the measuring direction. The positional deviation quantity is measured by assuming the image of the periodic pattern as an image of the pattern consisting of the single dark portion on the whole when measuring the positional deviation quantity of the periodic pattern image exposed on the photosensitive substrate in the measuring direction. The mask may be formed with measuring marks in which a plurality of pattern units consisting of periodic patterns having bright and dark portions arranged at the predetermined pitch are arranged in lattice at an interval larger than the predetermined pitch.

    摘要翻译: 一种通过投影光学系统曝光在感光基板上的掩模上形成的测量图案的图像的方法,测量测量方向上的测量图案的曝光图像的位置偏差量,从而测量投影光学系统的成像特性 测量位置偏差量的基础。 在该方法中,使用周期性图案作为测量图案,其中亮部和暗部以与测量方向相对应的方向以预定间距排列。 当测量在感光基板上沿测量方向曝光的周期性图案图像的位置偏差量时,通过假设周期性图案的图像作为由整个单个暗部组成的图案的图像来测量位置偏差量。 掩模可以形成有测量标记,其中由具有以预定间距布置的明暗部分的周期性图案组成的多个图案单元以大于预定间距的间隔格格排列。

    Projection exposure apparatus
    5.
    发明授权
    Projection exposure apparatus 失效
    投影曝光装置

    公开(公告)号:US4931830A

    公开(公告)日:1990-06-05

    申请号:US389978

    申请日:1989-08-07

    IPC分类号: G03F7/20 H01L21/027 H01L21/30

    摘要: A projection exposure apparatus is provided with an illuminating optical system for illuminating a reticle having a predetermined fine pattern, a projection optical system for projecting the pattern of the reticle onto a wafer, and diaphragm means so constructed as to vary the aperture of a diaphragm of the projection optical system, wherein means for receiving information on the pattern present on the reticle, and means for determining a diaphgram aperture capable of eliminating the high-order diffracted light generated by the pattern of the reticle according to information as stated above and controlling the aperture of variable diaphragm means of the projection optical system, are provided.

    摘要翻译: 投影曝光装置设置有用于照射具有预定精细图案的掩模版的照明光学系统,用于将掩模版的图案投影到晶片上的投影光学系统,以及被构造成将隔膜的孔径改变为 投影光学系统,其中用于接收关于掩模版上存在的图案的信息的装置,以及用于确定能够根据上述信息消除由所述标线图案产生的高次衍射光的轨迹孔的装置, 提供投影光学系统的可变光阑装置的孔径。

    Method of dimension measurement for a pattern formed by exposure
apparatus, and method for setting exposure conditions and for
inspecting exposure precision
    6.
    发明授权
    Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision 失效
    由曝光装置形成的图案的尺寸测量方法以及设置曝光条件和检查曝光精度的方法

    公开(公告)号:US4908656A

    公开(公告)日:1990-03-13

    申请号:US299236

    申请日:1989-01-19

    IPC分类号: G03F7/20 G03F7/207

    摘要: An exposure method for use in an apparatus for projecting a pattern formed on a mask onto a photosensitive substrate through a projection optical system, comprises the steps of providing a mask bearing a pattern of which width gradually varies in a reference direction on the mask transferring the pattern onto the photosensitive substrate through the projection optical system measuring the length of pattern transferred onto the photosensitive substrate, in a reference direction on the substrate corresponding to the reference direction of the mask determining optimum exposure conditions for the projection exposure, from thus measured length of the pattern and controlling the exposure according to the conditions.

    摘要翻译: 一种用于通过投影光学系统将形成在掩模上形成在掩模上的图案投影到感光基底上的装置的曝光方法包括以下步骤:提供一种掩模,该掩模承载在掩模上沿着基准方向逐渐变化的图案, 通过投影光学系统,通过投影光学系统将感光基板上转印的图案的长度沿着基板上的基准方向,对应于掩模的基准方向,确定用于投影曝光的最佳曝光条件,从该测量的长度 模式并根据条件控制曝光。

    Exposure method, exposure apparatus, and method for producing device
    9.
    发明授权
    Exposure method, exposure apparatus, and method for producing device 有权
    曝光方法,曝光装置及其制造方法

    公开(公告)号:US08233133B2

    公开(公告)日:2012-07-31

    申请号:US11312478

    申请日:2005-12-21

    申请人: Shigeru Hirukawa

    发明人: Shigeru Hirukawa

    IPC分类号: G03B27/52 G03B27/42 G03B27/58

    摘要: A liquid immersion photolithography system has an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. In addition, a plurality of nozzles are arranged so as to provide a substantially uniform velocity distribution of the liquid flow between the substrate and the projection optical system.

    摘要翻译: 液浸光刻系统具有用电磁辐射使基板曝光的曝光系统,并且包括将电磁辐射聚焦在基板上的投影光学系统。 液体供应系统在投影光学系统和基板之间提供液体流动。 此外,多个喷嘴被布置成在基板和投影光学系统之间提供基本均匀的液体流速分布。

    Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method
    10.
    发明授权
    Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method 有权
    基板加工方法,光掩模制造方法,光掩模和器件制造方法

    公开(公告)号:US07713889B2

    公开(公告)日:2010-05-11

    申请号:US11600151

    申请日:2006-11-16

    申请人: Shigeru Hirukawa

    发明人: Shigeru Hirukawa

    IPC分类号: H01L21/00

    摘要: A device linewidth characteristic is predicted based on a sharp-edged feature of a projected image of a predetermined pattern (steps 104 to 110), and an exposure condition of the pattern is adjusted based on the device linewidth characteristic that has been predicted (step 112). Then, exposure is performed under the adjusted exposure condition. That is, patterning of a resist on a substrate is performed with the projected image of the pattern (step 114). And, by developing the substrate after patterning, a resist pattern that satisfies a desired device linewidth characteristic is formed on the substrate. Accordingly, by performing etching of the substrate with the resist pattern serving as a mask, a pattern after etching can be formed with a desired linewidth.

    摘要翻译: 基于预定图案的投影图像的尖锐特征预测装置线宽特性(步骤104至110),并且基于已经预测的装置线宽特性来调整图案的曝光条件(步骤112 )。 然后,在调整后的曝光条件下进行曝光。 也就是说,利用图案的投影图像来执行基板上的抗蚀剂的图案化(步骤114)。 并且,通过在图案化之后显影衬底,在衬底上形成满足所需器件线宽特性的抗蚀剂图案。 因此,通过用抗蚀剂图案作为掩模进行基板的蚀刻,可以以期望的线宽形成蚀刻后的图案。