摘要:
A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.
摘要:
A method for inspecting distortion characteristics of a projection optical system to be inspected by arranging a mask formed with measurement patterns at a plurality of predetermined positions on the object surface side of the projection optical system, transferring projected images of the plurality of measurement patterns onto a photosensitive substrate arranged on the image surface side of the projection optical system, and detecting transfer images of the measurement-patterns, includes:the step of exposing a mask, on which pairs of first and second measurement patterns are arranged adjacent to each other to be separated by a predetermined interval .DELTA.T in one direction at positions on the mask corresponding to a plurality of points at which distortion amounts are to be inspected in a projection view field of the projection optical system, onto the photosensitive substrate via the projection optical system;the step of exposing the mask onto the photosensitive substrate via the projection optical system after the mask and the photosensitive substrate are moved relative to each other by an amount determined by the interval .DELTA.T with respect to the state in the preceding step;the step of measuring relative displacements between overlapping images of the first and second measurement patterns at different image height points in the projection view field of the projection optical system; andthe step of calculating a value obtained by sequentially accumulating the measured relative displacements in units of image height values as a distortion amount at the corresponding image height point.
摘要:
In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.
摘要:
A method of exposing images of measuring patterns formed on a mask on a photosensitive substrate through a projection optical system, measuring positional deviation quantities of the exposed images of the measuring patterns in a measuring direction and thus measuring imaging characteristics of the projection optical system on the basis of the measured positional deviation quantities. In this method, periodic patterns are used as the measuring patterns, wherein bright and dark portions are arranged at a predetermined pitch in a direction corresponding to the measuring direction. The positional deviation quantity is measured by assuming the image of the periodic pattern as an image of the pattern consisting of the single dark portion on the whole when measuring the positional deviation quantity of the periodic pattern image exposed on the photosensitive substrate in the measuring direction. The mask may be formed with measuring marks in which a plurality of pattern units consisting of periodic patterns having bright and dark portions arranged at the predetermined pitch are arranged in lattice at an interval larger than the predetermined pitch.
摘要:
A projection exposure apparatus is provided with an illuminating optical system for illuminating a reticle having a predetermined fine pattern, a projection optical system for projecting the pattern of the reticle onto a wafer, and diaphragm means so constructed as to vary the aperture of a diaphragm of the projection optical system, wherein means for receiving information on the pattern present on the reticle, and means for determining a diaphgram aperture capable of eliminating the high-order diffracted light generated by the pattern of the reticle according to information as stated above and controlling the aperture of variable diaphragm means of the projection optical system, are provided.
摘要:
An exposure method for use in an apparatus for projecting a pattern formed on a mask onto a photosensitive substrate through a projection optical system, comprises the steps of providing a mask bearing a pattern of which width gradually varies in a reference direction on the mask transferring the pattern onto the photosensitive substrate through the projection optical system measuring the length of pattern transferred onto the photosensitive substrate, in a reference direction on the substrate corresponding to the reference direction of the mask determining optimum exposure conditions for the projection exposure, from thus measured length of the pattern and controlling the exposure according to the conditions.
摘要:
An exposure method and apparatus that illuminates a pattern with an illumination system to expose a substrate through a projection system are provided. The pattern is illuminated with illumination light having a light amount distribution, which is set such that an amount of light is larger in an on-axis area substantially including an optical axis and in a plurality of off-axis areas arranged out of the optical axis than in an area other than the on-axis area and the plurality of off-axis areas on a pupil plane of the illumination system. The polarization states of the illumination light are different between the on-axis area and the off-axis areas.
摘要:
An exposure apparatus EXS forms an immersion area AR2 of a liquid LQ on the side of the image plane of a projection optical system PL and performs exposure of a substrate P via the projection optical system PL and the liquid LQ of the immersion region AR2. The exposure apparatus EXS has an optical cleaning unit (80) which irradiates a predetermined irradiation light Lu, having an optical cleaning effect, onto, for example, the upper surface (31) of the substrate stage PST which makes contact with the liquid LQ for forming the immersion area AR2. Thus, it is possible to prevent deterioration of the exposure accuracy and measurement accuracy due to pollution of the member in contact with the liquid in the immersion region.
摘要:
A liquid immersion photolithography system has an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. In addition, a plurality of nozzles are arranged so as to provide a substantially uniform velocity distribution of the liquid flow between the substrate and the projection optical system.
摘要:
A device linewidth characteristic is predicted based on a sharp-edged feature of a projected image of a predetermined pattern (steps 104 to 110), and an exposure condition of the pattern is adjusted based on the device linewidth characteristic that has been predicted (step 112). Then, exposure is performed under the adjusted exposure condition. That is, patterning of a resist on a substrate is performed with the projected image of the pattern (step 114). And, by developing the substrate after patterning, a resist pattern that satisfies a desired device linewidth characteristic is formed on the substrate. Accordingly, by performing etching of the substrate with the resist pattern serving as a mask, a pattern after etching can be formed with a desired linewidth.