公开(公告)号：US20180162723A1

公开(公告)日：2018-06-14

申请号：US15737389

申请日：2016-08-03

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Munenori DEGAWA ,  Hiroshi KIKUCHI

IPC: B81B7/02 ,  G01C19/5747 ,  G01C19/5783 ,  G01L9/12 ,  G01P15/08 ,  G01P15/125 ,  G01P15/18

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/04 ,  B81B2203/051 ,  B81B2207/015 ,  B81B2207/07 ,  G01C19/5747 ,  G01C19/5783 ,  G01D21/02 ,  G01L9/0052 ,  G01L9/12 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814

Abstract: Provided is an inertia sensor that can be reduced in size. An inertia sensor having layers 1a, 2a in which detection parts 20, 30 are formed, the inertial sensor being a laminated structure obtained by laminating two or more of the layers.

公开(公告)号：US20180274999A1

公开(公告)日：2018-09-27

申请号：US15764631

申请日：2016-08-03

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Takeshi KONNO ,  Hiroshi KIKUCHI ,  Kentarou MIYAJIMA ,  Munenori DEGAWA

IPC: G01L9/00

Abstract: To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.

公开(公告)号：US20180002164A1

公开(公告)日：2018-01-04

申请号：US15545922

申请日：2016-01-08

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Munenori DEGAWA ,  Hiroshi KIKUCHI ,  Akihiro OKAMOTO ,  Masashi YURA ,  Masahide HAYASHI

IPC: B81B7/00 ,  B81B3/00

CPC classification number: B81B7/0041 ,  B81B3/00 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01C19/5747 ,  G01C19/5769 ,  G01P15/08 ,  G01P15/125 ,  G01P15/18 ,  H01L29/84 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The purpose of the present invention is to improve the pressure resistance of a cavity in a semiconductor sensor device employing a resin package, and to do so without adversely affecting the embeddability of an electrically conductive member. The semiconductor sensor device has a gap 1a sealed in an airtight manner inside a laminate structure of a plurality of laminated substrates 1, 4, and 5, and has a structure in which the outside of the laminate structure is covered by a resin, wherein a platy component 2 having at least one side that is greater in length than the length of one side of the gap 1a along this side is arranged to the outside of an upper wall 1b of the gap 1, the upper wall 1b of the gap being mechanically suspended by the platy component 2.