Abstract:
An automatic sample preparation apparatus that automatically prepares a sample piece from a sample and includes a focused ion beam irradiation optical system, an electron beam irradiation optical system configured to irradiate an electron beam from a direction different from a direction of the focused ion beam, a sample piece transfer device configured to hold and transfer the sample piece separated and extracted from the sample, a detector configured to detect secondary charged particles emitted from an irradiation object, and a computer configured to recognize a position of the sample piece transfer device by image-recognition using an image data of the focused ion beam and the electron beam generated by irradiating the sample piece transfer device with the focused ion beam and the electron beam, and drive the sample piece transfer device, wherein the image data includes a reference mark.
Abstract:
A charged particle beam device (10a) includes a computer (21) which controls multiple charged particle beam irradiation optical systems, the needle (18), and a gas supply portion (17) to transfer a sample piece Q to a predetermined position of the sample piece holder P, based on at least images of a sample piece holder (P), a needle (18), and the sample piece (Q) previously acquired by multiple charged particle beams.
Abstract:
A charged particle beam device (10a) includes a computer (21) which controls multiple charged particle beam irradiation optical systems, the needle (18), and a gas supply portion (17) to transfer a sample piece Q to a predetermined position of the sample piece holder P, based on at least images of a sample piece holder (P), a needle (18), and the sample piece (Q) previously acquired by multiple charged particle beams.
Abstract:
A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate.
Abstract:
A charged particle beam apparatus is provided with a controller configured to control other components and perform operations including: an irradiating operation to irradiate a first position of a sample with a charged particle beam while gradually changing a scan range of the charged particle beam to move from a first position; a first image acquiring operation to acquire an image of each portion where the charged particle beam moves; an indicator forming operation to form an indicator at a second position by the charged particle beam when the scan range of the charged particle beam reaches the second position; a second image acquiring operation to acquire an image of the second position in a state where the indicator is formed; and an adjusting operation to adjust relative position between the stage and the scan range of the charged particle beam.
Abstract:
A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.
Abstract:
An ion beam apparatus includes an ion source configured to emit an ion beam, a condenser lens electrode that condenses the ion beam, and a condenser lens power source configured to apply a voltage to the condenser lens electrode. A storage portion stores a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value. A control portion retrieves the third voltage value from the storage portion and sets the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieves the fourth voltage value from the storage portion and sets the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.
Abstract:
Disclosed are a charged particle beam apparatus and a sample processing observation method, the method including: a sample piece formation process in which a sample is irradiated with a focused ion beam such that a sample piece is cut out from the sample; a cross-section processing process in which the sample piece support holds the sample piece and a cross section thereof is irradiated with the ion beam to process the cross section; a sample piece approach movement process in which the sample piece support holds the sample piece and the sample piece is moved to a position that is closer to an electron beam column than an intersection point of beam optical axes of the ion beam and an electron beam is; and a SEM image acquisition process in which the cross section is irradiated with the electron beam to acquire the SEM image of the cross section.
Abstract:
An apparatus for processing and observing a cross-section includes: a sample bed holding a sample; a focused ion beam column radiating a focused ion beam to the sample; an electron beam column radiating an electron beam to the sample, perpendicularly to the focused ion beam; an electron detector detecting secondary electrons or reflection electrons generated from the sample; a irradiation position controller controlling irradiation positions of the focused ion beam and the electron beam based on target irradiation position information showing target irradiation positions of beams on the sample; a process controller controlling a cross-section-exposing process that exposes a cross-section of the sample by radiating the focused ion beam to the sample and a cross-section image-obtaining process that obtains a cross-section image of the cross-section by radiating the electron beam to the cross-section; and an image quality corrector correcting image quality of the cross-section image obtained.
Abstract:
An automatic sample preparation apparatus that automatically prepares a sample piece from a sample includes: a focused ion beam irradiation optical system configured to irradiate a focused ion beam; an electron beam irradiation optical system configured to irradiate an electron beam from a direction different from a direction of the focused ion beam; a sample piece transfer device configured to hold and transfer the sample piece separated and extracted from the sample; a detector configured to detect secondary charged particles emitted from an irradiation object by irradiating the irradiation object with the focused ion beam and/or the electron beam; and a computer configured to recognize a position of the sample piece transfer device by image-recognition using an image data of the focused ion beam and the electron beam generated by irradiating the sample piece transfer device with the focused ion beam and the electron beam, and drive the transfer device.