公开(公告)号：US20110128772A1

公开(公告)日：2011-06-02

申请号：US12801533

申请日：2010-06-14

申请人： Ho-Jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ki-ha Hong

发明人： Ho-Jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ki-ha Hong

IPC分类号： G11C11/00 ,  G11C8/08

CPC分类号： G11C8/08 ,  G11C5/063 ,  G11C11/21 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/0069 ,  G11C15/04 ,  G11C2013/0073 ,  G11C2213/33 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/147 ,  H01L45/148

摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.

摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。

公开(公告)号：US08203863B2

公开(公告)日：2012-06-19

申请号：US12801533

申请日：2010-06-14

申请人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ki-ha Hong

发明人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ki-ha Hong

IPC分类号： G11C11/00 ,  G11C8/00

CPC分类号： G11C8/08 ,  G11C5/063 ,  G11C11/21 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/0069 ,  G11C15/04 ,  G11C2013/0073 ,  G11C2213/33 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/147 ,  H01L45/148

摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.

摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。

公开(公告)号：US08509430B2

公开(公告)日：2013-08-13

申请号：US12923375

申请日：2010-09-17

申请人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

发明人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

IPC分类号： H04L29/06

CPC分类号： G06F21/85 ,  G06F21/78 ,  G11C7/24 ,  G11C11/005 ,  G11C13/0002 ,  G11C13/0059 ,  G11C14/009

摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.

摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。

公开(公告)号：US20110222685A1

公开(公告)日：2011-09-15

申请号：US12923375

申请日：2010-09-17

申请人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

发明人： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

IPC分类号： H04L9/38 ,  H04L9/06

CPC分类号： G06F21/85 ,  G06F21/78 ,  G11C7/24 ,  G11C11/005 ,  G11C13/0002 ,  G11C13/0059 ,  G11C14/009

摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.

摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。

公开(公告)号：US20110062448A1

公开(公告)日：2011-03-17

申请号：US12923266

申请日：2010-09-13

申请人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

发明人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。

公开(公告)号：US09450071B2

公开(公告)日：2016-09-20

申请号：US12923266

申请日：2010-09-13

申请人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

发明人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。

公开(公告)号：US08508194B2

公开(公告)日：2013-08-13

申请号：US12923857

申请日：2010-10-12

申请人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

发明人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

IPC分类号： G05F1/10

CPC分类号： H03K17/6871 ,  H02M1/08 ,  H02M3/158 ,  H02M3/337 ,  H02M2001/0074 ,  H03K2217/0081

摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.

摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。

公开(公告)号：US20110108704A1

公开(公告)日：2011-05-12

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01L31/09 ,  H01L31/101 ,  H01L31/102

CPC分类号： H04N9/045 ,  H01L27/14643 ,  H04N5/3745

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

摘要翻译： 图像传感器及其操作方法。 图像传感器包括包括多个像素的像素阵列。 多个像素中的每一个包括光电传感器，其电压 - 电流特性根据入射光的能量而变化，并且产生由入射光的能量确定的感测电流; 根据用于复位所述多个像素中的至少一个的复位信号，被激活以产生参考电流的复位单元; 以及转换单元，其将感测电流和参考电流分别转换为感测电压和参考电压。

公开(公告)号：US09118795B2

公开(公告)日：2015-08-25

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

CPC分类号： H04N9/045 ,  H01L27/14643 ,  H04N5/3745

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

摘要翻译： 图像传感器及其操作方法。 图像传感器包括包括多个像素的像素阵列。 多个像素中的每一个包括光电传感器，其电压 - 电流特性根据入射光的能量而变化，并且产生由入射光的能量确定的感测电流; 根据用于复位所述多个像素中的至少一个的复位信号，被激活以产生参考电流的复位单元; 以及转换单元，其将感测电流和参考电流分别转换为感测电压和参考电压。

公开(公告)号：US08975568B2

公开(公告)日：2015-03-10

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.