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1.发明授权Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US08203863B2
公开(公告)日：2012-06-19
申请号：US12801533
申请日：2010-06-14
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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2.发明申请Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US20110128772A1
公开(公告)日：2011-06-02
申请号：US12801533
申请日：2010-06-14
申请人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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公开(公告)号：US20110085368A1
公开(公告)日：2011-04-14
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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公开(公告)号：US08357992B2
公开(公告)日：2013-01-22
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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5.发明申请Storage devices having a security function and methods of securing data stored in the storage device 有权具有安全功能的存储设备和保存存储在存储设备中的数据的方法公开(公告)号：US20110222685A1
公开(公告)日：2011-09-15
申请号：US12923375
申请日：2010-09-17
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
CPC分类号： G06F21/85 , G06F21/78 , G11C7/24 , G11C11/005 , G11C13/0002 , G11C13/0059 , G11C14/009
摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.
摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。
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6.发明授权Storage devices having a security function and methods of securing data stored in the storage device 有权具有安全功能的存储设备和保存存储在存储设备中的数据的方法公开(公告)号：US08509430B2
公开(公告)日：2013-08-13
申请号：US12923375
申请日：2010-09-17
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
IPC分类号： H04L29/06
CPC分类号： G06F21/85 , G06F21/78 , G11C7/24 , G11C11/005 , G11C13/0002 , G11C13/0059 , G11C14/009
摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.
摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。
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公开(公告)号：US20150028278A1
公开(公告)日：2015-01-29
申请号：US14444083
申请日：2014-07-28
申请人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
发明人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
IPC分类号： H01L45/00
CPC分类号： H01L29/788 , G06N3/049 , G06N3/063 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C14/0063 , G11C16/0433 , G11C2213/15 , G11C2213/53 , H01L27/11521 , H01L28/00 , H01L29/408 , H01L29/42324 , H01L29/51 , H01L29/512 , H01L29/517 , H01L29/685 , H01L29/78 , H01L45/085 , H01L45/1206 , H01L45/147
摘要： Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.
摘要翻译： 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。
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公开(公告)号：US08164130B2
公开(公告)日：2012-04-24
申请号：US10852287
申请日：2004-05-25
申请人： Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
发明人： Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
IPC分类号： G11C11/34
CPC分类号： G11C13/0007 , G11C2213/32 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.
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公开(公告)号：US20070120580A1
公开(公告)日：2007-05-31
申请号：US11403902
申请日：2006-04-14
申请人： Dong Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
发明人： Dong Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
IPC分类号： H03K19/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
摘要翻译： 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。
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公开(公告)号：US07936044B2
公开(公告)日：2011-05-03
申请号：US11403902
申请日：2006-04-14
申请人： Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
发明人： Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
摘要翻译： 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。
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