公开(公告)号：US07560783B2

公开(公告)日：2009-07-14

申请号：US11455397

申请日：2006-06-19

申请人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/772

CPC分类号： H01L29/7805 ,  H01L21/28512 ,  H01L21/28568 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613

摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

摘要翻译： 本发明涉及包含半导体层并包含施加到半导体层的金属化的金属 - 半导体接触，将高掺杂浓度引入到半导体层中，使得在金属化和金属化之间形成非反应性金属 - 半导体接触 半导体层。 金属化和/或半导体层以这样的方式形成，使得只有一部分引入的掺杂浓度是电活性的，并且仅当这一部分掺杂浓度掺杂的半导体层仅在与...接触时形成肖特基接触 金属化。 此外，本发明涉及一种半导体部件，其包括漏区，嵌入其中的主体区和再次嵌入其中的源区。 半导体部件具有金属半导体触点，触点仅与源极区域接触而不与主体区域接触。

公开(公告)号：US20060244060A1

公开(公告)日：2006-11-02

申请号：US11455397

申请日：2006-06-19

申请人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/76

CPC分类号： H01L29/7805 ,  H01L21/28512 ,  H01L21/28568 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613

摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

公开(公告)号：US07087981B2

公开(公告)日：2006-08-08

申请号：US10419597

申请日：2003-04-21

申请人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/207

CPC分类号： H01L29/7805 ,  H01L21/28512 ,  H01L21/28568 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613

摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

摘要翻译： 本发明涉及包含半导体层并包含施加到半导体层的金属化的金属 - 半导体接触，将高掺杂浓度引入到半导体层中，使得在金属化和金属化之间形成非反应性金属 - 半导体接触 半导体层。 金属化和/或半导体层以这样的方式形成，使得只有一部分引入的掺杂浓度是电活性的，并且仅当这一部分掺杂浓度掺杂的半导体层仅在与...接触时形成肖特基接触 金属化。 此外，本发明涉及一种半导体部件，其包括漏区，嵌入其中的主体区和再次嵌入其中的源区。 半导体部件具有金属半导体触点，触点仅与源极区域接触而不与主体区域接触。

公开(公告)号：US07977737B2

公开(公告)日：2011-07-12

申请号：US12043429

申请日：2008-03-06

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

IPC分类号： H01L29/66 ,  H01L21/337

CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

公开(公告)号：US08716792B2

公开(公告)日：2014-05-06

申请号：US12241985

申请日：2008-09-30

申请人： Anton Mauder ,  Franz Hirler ,  Armin Willmeroth ,  Michael Rueb ,  Holger Kapels

发明人： Anton Mauder ,  Franz Hirler ,  Armin Willmeroth ,  Michael Rueb ,  Holger Kapels

IPC分类号： H01L21/20

CPC分类号： H01L29/36 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0688 ,  H01L29/0878 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7811

摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

摘要翻译： 半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。 围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置 垂直延伸的互补掺杂区定位。

公开(公告)号：US07973359B2

公开(公告)日：2011-07-05

申请号：US12194384

申请日：2008-08-19

申请人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

发明人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L24/05 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/42372 ,  H01L29/7811 ,  H01L2224/02166 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

摘要翻译： 具有电荷载体补偿结构的半导体器件。 在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。 至少一个键合接触区域电耦合到栅极结构或源极结构。 电容增大场板电耦合到近表面接合区域中的至少一个。

公开(公告)号：US20100044788A1

公开(公告)日：2010-02-25

申请号：US12194384

申请日：2008-08-19

申请人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

发明人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L24/05 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/42372 ,  H01L29/7811 ,  H01L2224/02166 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

摘要翻译： 具有电荷载体补偿结构的半导体器件。 在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。 至少一个键合接触区域电耦合到栅极结构或源极结构。 电容增大场板电耦合到近表面接合区域中的至少一个。

公开(公告)号：US20100078775A1

公开(公告)日：2010-04-01

申请号：US12241985

申请日：2008-09-30

申请人： Anton Mauder ,  Franz Hirler ,  Armin Willmeroth ,  Michael Rueb ,  Holger Kapels

发明人： Anton Mauder ,  Franz Hirler ,  Armin Willmeroth ,  Michael Rueb ,  Holger Kapels

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L29/36 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0688 ,  H01L29/0878 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7811

摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

摘要翻译： 半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。 围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置 垂直延伸的互补掺杂区定位。

公开(公告)号：US20090224302A1

公开(公告)日：2009-09-10

申请号：US12043429

申请日：2008-03-06

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

公开(公告)号：US20110109283A1

公开(公告)日：2011-05-12

申请号：US12942148

申请日：2010-11-09

申请人： Holger Kapels ,  Gerald Deboy

发明人： Holger Kapels ,  Gerald Deboy

IPC分类号： G05F1/618

CPC分类号： H02M3/1588 ,  Y02B70/1466

摘要： A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

摘要翻译： 一种用于控制转换器的系统和方法。 一个实施例提供了用于向感应存储元件施加输入电压的第一开关元件的循环致动。 在升压转换器中，第二开关元件用作整流器装置中的第一整流元件。 为第一和第二开关元件提供致动电路。