公开(公告)号：US20050014964A1

公开(公告)日：2005-01-20

申请号：US10851693

申请日：2004-05-21

申请人： Hong Park ,  Dong Lim ,  Kwang Lim ,  Young Kim ,  Doh Riu ,  Hyung Kim ,  Dong Shin ,  Soo Kim ,  Kyung Kim ,  Hyun Shin ,  Dae Cho

发明人： Hong Park ,  Dong Lim ,  Kwang Lim ,  Young Kim ,  Doh Riu ,  Hyung Kim ,  Dong Shin ,  Soo Kim ,  Kyung Kim ,  Hyun Shin ,  Dae Cho

IPC分类号： C08G77/08 ,  B01J29/08 ,  B01J29/40 ,  B01J29/86 ,  C07F7/04 ,  C08G77/60

CPC分类号： B01J29/86 ,  B01J29/084 ,  B01J29/40 ,  C08G77/60

摘要： The present invention is related to a method of producing polycarbosilane by heating polydimethylsilane at low pressure within the range of 320˜450° C. using zeolite having the Si/Al or Si/B ratio of 1˜200 as catalyst. This invention uses a zeolite with the structure of ZSM-5, ZSM-11, ZSM-12, zeolite X and zeolite Y, which has the Si/Al or Si/B ratio of 1˜200, as catalyst. When polycarbosilane is produced using a specific zeolite as catalyst, Si/Al or Si/B ratio can be adjusted at any proportion, enabling acidity control of catalyst, and therefore the molecular weight of final products can be easily controlled and the product yield can be improved, compared to conventional solid acid catalysts.

摘要翻译： 本发明涉及一种通过在320〜450℃的范围内将聚二甲基硅烷在低压下加热，使用Si / Al或Si / B比为1〜200的沸石作为催化剂来制造聚碳硅烷的方法。 本发明使用具有Si / Al或Si / B比为1〜200的ZSM-5，ZSM-11，ZSM-12，沸石X和沸石Y的沸石作为催化剂。 当使用特定沸石作为催化剂制造聚碳硅烷时，可以任意比例调节Si / Al或Si / B比，使催化剂具有酸度控制，因此可以容易地控制最终产物的分子量，产物产率可以为 改进，与传统的固体酸催化剂相比。

公开(公告)号：US20060027940A1

公开(公告)日：2006-02-09

申请号：US11240704

申请日：2005-09-30

申请人： Dae Cho ,  Hong Park ,  Hyun Shin ,  Dong Lim ,  Kwang Kim

发明人： Dae Cho ,  Hong Park ,  Hyun Shin ,  Dong Lim ,  Kwang Kim

IPC分类号： C01B31/00

CPC分类号： F16D69/023 ,  C04B35/573 ,  C04B35/806 ,  C04B35/83 ,  C04B37/008 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/5244 ,  C04B2235/5256 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/6562 ,  C04B2235/661 ,  C04B2237/385 ,  C04B2237/52 ,  F16D13/64 ,  F16D2200/0047 ,  F16D2200/0086

摘要： The present invention relates to a clutch for transmission power. The clutch for transmission power according to the present invention includes flywheel, clutch cover and clutch disk assembly positioning between the flywheel and the clutch cover; moreover, the clutch disk assembly includes a clutch facing having main body portion formed with a center hole in the middle thereof, and a contacting portion wherein one side thereof faces the friction pad at said flywheel side and the other side thereof faces the press plate of said clutch cover, and the portion facing each other between the friction pad and the press plate is made of carbon-carbon composition; a spline hub being overlapped with one side of the clutch facing wherein a spline groove is formed in the inner diameter thereof; and a connecting means for connecting the clutch facing with the spline hub. Furthermore, the clutch disk assembly and the method of manufacturing the friction substance for clutch according to the invention can improve assemblability and reduce weight by simplifying it as a single part without using shock absorbing apparatus such as coil spring or the like on clutch disk assembly. In addition, the power transmission of an engine can be improved, and also it has an effect that an automobile can start softly and slippery does not occur even at abrupt acceleration by providing with carbon-carbon composition or carbon-silicon carbide composition having excellent shock absorption function.

摘要翻译： 本发明涉及一种用于发射功率的离合器。 根据本发明的用于传动动力的离合器包括在飞轮和离合器盖之间定位的飞轮，离合器盖和离合器盘组件; 此外，离合器盘组件包括离合器面对，其具有在其中间形成有中心孔的主体部分，以及接触部分，其中一侧面在所述飞轮侧的摩擦垫，另一侧面向压板 所述离合器盖，并且在所述摩擦垫和所述压板之间彼此相对的部分由碳 - 碳组成制成; 花键轮毂与离合器面对面的一侧重叠，其中在其内径形成花键槽; 以及用于连接面向花键轮毂的离合器的连接装置。 此外，根据本发明的离合器盘组件和制造用于离合器的摩擦物质的方法可以通过将其简化为单个零件而不使用离合器盘组件上的螺旋弹簧等的冲击吸收装置来提高组装性和减轻重量。 此外，可以提高发动机的动力传递，并且还具有通过提供具有优异的冲击的碳 - 碳组合物或碳 - 碳化硅组合物，甚至在突然加速时也不会发生汽车轻松滑动的效果 吸收功能。

公开(公告)号：US20050109575A1

公开(公告)日：2005-05-26

申请号：US10825070

申请日：2004-04-15

申请人： Dae Cho ,  Hong Park ,  Hyun Shin ,  Dong Lim ,  Kwang Kim

发明人： Dae Cho ,  Hong Park ,  Hyun Shin ,  Dong Lim ,  Kwang Kim

IPC分类号： F16D13/62 ,  F16D13/60 ,  F16D13/64 ,  F16D13/68 ,  F16D69/00 ,  F16D69/02 ,  F16D69/04

CPC分类号： F16D69/023 ,  C04B35/573 ,  C04B35/806 ,  C04B35/83 ,  C04B37/008 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/5244 ,  C04B2235/5256 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/6562 ,  C04B2235/661 ,  C04B2237/385 ,  C04B2237/52 ,  F16D13/64 ,  F16D2200/0047 ,  F16D2200/0086

摘要： The present invention relates to a clutch for transmission power. The clutch for transmission power according to the present invention includes flywheel, clutch cover and clutch disk assembly positioning between the flywheel and the clutch cover; moreover, the clutch disk assembly includes a clutch facing having main body portion formed with a center hole in the middle thereof, and a contacting portion wherein one side thereof faces the friction pad at said flywheel side and the other side thereof faces the press plate of said clutch cover, and the portion facing each other between the friction pad and the press plate is made of carbon-carbon composition; a spline hub being overlapped with one side of the clutch facing wherein a spline groove is formed in the inner diameter thereof; and a connecting means for connecting the clutch facing with the spline hub. Furthermore, the clutch disk assembly and the method of manufacturing the friction substance for clutch according to the invention can improve assemblability and reduce weight by simplifying it as a single part without using shock absorbing apparatus such as coil spring or the like on clutch disk assembly. In addition, the power transmission of an engine can be improved, and also it has an effect that an automobile can start softly and slippery does not occur even at abrupt acceleration by providing with carbon-carbon composition or carbon-silicon carbide composition having excellent shock absorption function.

摘要翻译： 本发明涉及一种用于发射功率的离合器。 根据本发明的用于传动动力的离合器包括在飞轮和离合器盖之间定位的飞轮，离合器盖和离合器盘组件; 此外，离合器盘组件包括离合器面对，其具有在其中间形成有中心孔的主体部分，以及接触部分，其中一侧面在所述飞轮侧的摩擦垫，另一侧面向压板 所述离合器盖，并且在所述摩擦垫和所述压板之间彼此相对的部分由碳 - 碳组成制成; 花键轮毂与离合器面对面的一侧重叠，其中在其内径形成花键槽; 以及用于连接面向花键轮毂的离合器的连接装置。 此外，根据本发明的离合器盘组件和制造用于离合器的摩擦物质的方法可以通过将其简化为单个零件而不使用离合器盘组件上的螺旋弹簧等的冲击吸收装置来提高组装性和减轻重量。 此外，可以提高发动机的动力传递，并且还具有通过提供具有优异的冲击的碳 - 碳组合物或碳 - 碳化硅组合物，甚至在突然加速时也不会发生汽车轻松滑动的效果 吸收功能。

公开(公告)号：US20120010226A1

公开(公告)日：2012-01-12

申请号：US13067719

申请日：2011-06-22

申请人： Hyun Shin ,  Jeong Ki Kim ,  Su Nam Kim ,  Sang Min Lee ,  Byeong Gon Lee ,  Ih Seop Chang

发明人： Hyun Shin ,  Jeong Ki Kim ,  Su Nam Kim ,  Sang Min Lee ,  Byeong Gon Lee ,  Ih Seop Chang

IPC分类号： A61K8/49 ,  A61Q19/00

CPC分类号： A61Q19/007 ,  A61K8/498

摘要： The present invention relates to a composition for external skin application having a skin-moisturizing effect, which comprises gallocatechin gallate as an active ingredient. More particularly, the composition for external skin application comprises gallocatechin gallate as an active ingredient to activate peroxisome proliferator activated receptor isoform alpha (PPAR-α), to stimulate expression of filaggrin and involucrin that are skin-moisturizing factors, and thus to provide excellent anti-drying and skin-moisturizing effects. More particularly, the composition for external skin application may further comprise theobromine and quercetin in addition to gallocatechin gallate to maximize such effects.

摘要翻译： 本发明涉及具有皮肤保湿作用的外用皮肤用组合物，其包含没食子儿茶素没食子酸镓作为活性成分。 更具体地说，外用皮肤用组合物包含游泳素没食子酸酯作为活性成分，活化过氧化物酶体增殖物激活受体亚型α（PPAR-α），刺激作为皮肤保湿因子的丝聚蛋白和外皮蛋白的表达， 干燥和皮肤保湿效果。 更具体地，用于外用皮肤施用的组合物可以进一步包含可待因和槲皮素，除了没食子儿茶素没食子酸酯以使这种效果最大化。

公开(公告)号：US20070275849A1

公开(公告)日：2007-11-29

申请号：US10575665

申请日：2003-10-14

申请人： Hyun Shin ,  Byung Choi ,  Yeon Yoo ,  Young Choe ,  Jung Kang ,  Min Kil ,  Joo Park ,  Kwang Park ,  Won Lee

发明人： Hyun Shin ,  Byung Choi ,  Yeon Yoo ,  Young Choe ,  Jung Kang ,  Min Kil ,  Joo Park ,  Kwang Park ,  Won Lee

IPC分类号： B01J23/16

CPC分类号： C10G1/00 ,  B01J23/002 ,  B01J23/31 ,  B01J23/881 ,  B01J23/882 ,  B01J23/883 ,  B01J23/8876 ,  B01J37/0009 ,  B01J37/0018 ,  B01J37/04 ,  B01J37/08 ,  B01J2523/00 ,  C07C51/252 ,  C10G1/002 ,  C10G2/32 ,  C10G3/00 ,  Y02P30/20 ,  C07C57/04 ,  B01J2523/13 ,  B01J2523/54 ,  B01J2523/68 ,  B01J2523/842 ,  B01J2523/845 ,  B01J2523/847 ,  B01J2523/3712 ,  B01J2523/72 ,  B01J2523/31

摘要： The present invention relates to a method for preparing a catalyst which is used in a process of producing acrolein and acrylic acid by the reaction of oxygen-containing gas and propylene. According to the present invention, a sublimable material, such as urea (NH2CONH2), melamine (C3H6N6), ammonium oxalate (C2H8N2O4), methyl oxalate (C4H6O4) or naphthalene (C10H8), is added as a catalyst additive in the preparation of the catalyst. Using the catalyst prepared by the present invention, acrolein and acrylic can be produced at high yield.

摘要翻译： 本发明涉及一种制备催化剂的方法，该催化剂用于通过含氧气体和丙烯的反应生产丙烯醛和丙烯酸的方法。 根据本发明，可升华的材料，例如脲（NH 2 CONH 2 H 2），三聚氰胺（C 3 H 6） 草酸铵（C 2 H 2 N 2 N 2 O 4） 草酸甲酯（C 4 H 6 O 4 O 4）或萘（C 10 H 2 O） 作为催化剂添加剂加入催化剂的制备中。 使用本发明制备的催化剂可以高产率生产丙烯醛和丙烯酸。

公开(公告)号：US20070117376A1

公开(公告)日：2007-05-24

申请号：US11320679

申请日：2005-12-30

申请人： Hyun Shin

发明人： Hyun Shin

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/76825 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

摘要： A method for fabricating a semiconductor device is disclosed. The method prevents line contact defects and overhangs associated with a barrier metal layer. The method includes forming a PMD layer on a semiconductor substrate including a terminal for the semiconductor device and forming a first contact hole by removing the PMD layer positioned over the terminal of the semiconductor device. Ions are implanted in at least portions of the PMD layer corresponding to corners associated with the contact hole. The comers of the PMD layer are rounded by etching the portions of the PMD layer that correspond to the contact hole. A metal line is formed by depositing a metal layer on the PMD layer including the contact hole and selectively removing portions of the metal layer.

摘要翻译： 公开了一种制造半导体器件的方法。 该方法防止与阻挡金属层相关联的线接触缺陷和突出端。 该方法包括在包括用于半导体器件的端子的半导体衬底上形成PMD层，并且通过去除位于半导体器件的端子上的PMD层来形成第一接触孔。 离子被植入至与接触孔相关的拐角对应的PMD层的至少部分。 通过蚀刻对应于接触孔的PMD层的部分，PMD层的角被倒圆。 通过在包括接触孔的PMD层上沉积金属层并选择性地去除金属层的部分来形成金属线。

公开(公告)号：US20070117356A1

公开(公告)日：2007-05-24

申请号：US11602949

申请日：2006-11-22

申请人： Hyun Shin ,  Changho Lee

发明人： Hyun Shin ,  Changho Lee

IPC分类号： H01L21/20

CPC分类号： C30B29/40 ,  C30B25/02

摘要： A method of manufacturing a single crystalline gallium nitride (GaN) thick film grown by loading a base substrate in a hydride vapor phase epitaxy (HVPE) reactor, the method including: growing a first GaN film at a first temperature, in the surface kinetics-controlled regime, where a growth rate is determined by the reaction rate on a film surface; and growing a second GaN film on the first GaN film at a second temperature, in the mass transport-controlled regime, where the growth rate is determined by a material transport in the vapor phase, wherein a growth temperature of the second GaN film is higher than that of the first GaN film. According to the present invention, defects, bending, and cracks may be reduced and the crystalline GaN thick film of excellent crystal quality may be manufactured.

摘要翻译： 一种制造通过在氢化物气相外延（HVPE）反应器中加载基底衬底而生长的单晶氮化镓（GaN）厚膜的方法，该方法包括：在第一温度下，在表面动力学上生长第一GaN膜， 其中生长速率由膜表面上的反应速率决定; 以及在所述质量传输控制状态下，在所述第一温度下，在所述第一GaN膜上生长第二GaN膜，其中所述生长速率由所述气相中的材料传输确定，其中所述第二GaN膜的生长温度较高 比第一GaN膜的厚度。 根据本发明，可以减少缺陷，弯曲和裂纹，并且可以制造出优异的晶体质量的结晶GaN厚膜。

公开(公告)号：US20070085170A1

公开(公告)日：2007-04-19

申请号：US11581339

申请日：2006-10-17

申请人： Hyun Shin ,  Ki Lee

发明人： Hyun Shin ,  Ki Lee

IPC分类号： H01L29/04

CPC分类号： C30B29/40 ,  C30B25/02

摘要： A single crystalline a-plane nitride semiconductor wafer includes one to three orientation flats in a crystalline direction, wherein a-plane ({11-20} plane) is formed as a main plane. Since plane orientation can easily be recognized, accuracy can be improved when a semiconductor device is formed on the nitride semiconductor wafer.

摘要翻译： 单晶α-面氮化物半导体晶片在结晶方向上包括一至三个定向平面，其中形成a平面（{11-20}面）作为主平面。 由于可以容易地识别平面取向，因此在氮化物半导体晶片上形成半导体器件时可以提高精度。

公开(公告)号：US20070038004A1

公开(公告)日：2007-02-15

申请号：US11502027

申请日：2006-08-10

申请人： Hyun Shin ,  Byung Choi ,  Yeon Yoo ,  Young Choe ,  Young Cho ,  Duk Kim ,  Kwang Park ,  Joo Park

发明人： Hyun Shin ,  Byung Choi ,  Yeon Yoo ,  Young Choe ,  Young Cho ,  Duk Kim ,  Kwang Park ,  Joo Park

IPC分类号： C07C51/16 ,  B01J23/00

CPC分类号： B01J23/002 ,  B01J23/31 ,  B01J23/8876 ,  B01J23/8877 ,  B01J23/8885 ,  B01J27/0576 ,  B01J37/0009 ,  B01J37/0236 ,  B01J2523/00 ,  C07C51/215 ,  C07C51/252 ,  C07C57/04 ,  B01J2523/13 ,  B01J2523/54 ,  B01J2523/68 ,  B01J2523/842 ,  B01J2523/845 ,  B01J2523/56 ,  B01J2523/64 ,  B01J2523/17 ,  B01J2523/24 ,  B01J2523/55 ,  B01J2523/69

摘要： Disclosed are a Mo—Bi—Nb—Te based composite metal oxide; and a process for producing (meth)acrylic acid from at least one reaction material selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, wherein the Mo—Bi—Nb—Te based composite metal oxide is used as a catalyst. Also, disclosed is a process for producing (meth)acrylic acid comprising a first step of producing (meth)acrolein as a main product from at least one reaction material selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, and a second step of producing (meth)acrylic acid from the (meth)acrolein, wherein yield of (meth)acrylic acid in the product of the first step is 20 mole % or higher.

摘要翻译： 公开了一种Mo-Bi-Nb-Te基复合金属氧化物; 和由选自丙烯，丙烷，异丁烯，叔丁醇和甲基叔丁基醚中的至少一种反应材料生产（甲基）丙烯酸的方法，其中Mo-Bi-Nb-Te基 复合金属氧化物用作催化剂。 还公开了一种生产（甲基）丙烯酸的方法，该方法包括以下步骤：从选自丙烯，丙烷，异丁烯，叔丁醇的至少一种反应材料和 甲基叔丁基醚，以及由（甲基）丙烯醛制备（甲基）丙烯酸的第二步，其中第一步产物中（甲基）丙烯酸的收率为20摩尔％以上。

公开(公告)号：US20070032027A1

公开(公告)日：2007-02-08

申请号：US11498680

申请日：2006-08-02

申请人： Hyun Shin ,  Jae Han

发明人： Hyun Shin ,  Jae Han

IPC分类号： H01L21/336

CPC分类号： H01L21/823493 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed is a method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor. The present method includes a low-voltage well implantation process on a semiconductor substrate to form a first well in a first region of the substrate and a second well in a second region of the substrate; forming first and second gate oxide layers and first and second gate electrodes in the first and second regions, respectively; forming a first photoresist pattern to expose the first region; forming a first LDD region in the first region exposed by the first photoresist pattern and the first gate electrode; removing the first photoresist pattern; forming a second photoresist pattern to expose the second region; forming a second LDD region in the second region exposed by the second photoresist pattern and the second gate electrode; performing a compensational implantation on the second region to adjust a well concentration for the high-voltage MOS transistor; and removing the second photoresist pattern.

摘要翻译： 公开了一种制造包括低电压MOS晶体管和高压MOS晶体管的半导体器件的方法。 本方法包括在半导体衬底上的低电压阱注入工艺，以在衬底的第一区域中形成第一阱，在衬底的第二区域中形成第二阱; 分别在第一和第二区域中形成第一和第二栅极氧化物层和第一和第二栅电极; 形成第一光致抗蚀剂图案以暴露第一区域; 在由第一光致抗蚀剂图案和第一栅电极暴露的第一区域中形成第一LDD区; 去除第一光致抗蚀剂图案; 形成第二光致抗蚀剂图案以暴露所述第二区域; 在由所述第二光致抗蚀剂图案和所述第二栅电极暴露的所述第二区域中形成第二LDD区域; 在所述第二区域上执行补偿注入以调整所述高压MOS晶体管的阱浓度; 并且去除第二光致抗蚀剂图案。