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    Method for forming low and high minority carrier lifetime layers in a single semiconductor structure
    1.
    发明授权
    Method for forming low and high minority carrier lifetime layers in a single semiconductor structure 失效
    在单个半导体结构中形成低和高的少数载流子寿命层的方法

    公开(公告)号：US5468674A

    公开(公告)日：1995-11-21

    申请号：US260155

    申请日：1994-06-08

    申请人： Howard W. Walker ,  Graham A. Garcia

    发明人： Howard W. Walker ,  Graham A. Garcia

    IPC分类号： H01L21/20 ,  H01L21/76

    CPC分类号： H01L21/2007 ,  Y10S148/012 ,  Y10S148/15

    摘要： A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.

    摘要翻译： 一种用于形成具有低少数载流子寿命层和具有高少数载流子寿命的层的半导体结构的方法包括以下步骤：在蓝宝石蓝宝石处理晶片上的少数少数载流子寿命硅层上形成二氧化硅层 以及另一层二氧化硅在体硅器件晶片的高少数载流子寿命硅层上。 将二氧化硅层接触并退火以形成具有退火层的二氧化硅的结合结构。 然后将体硅层变薄。 通过光刻法将体硅和退火的二氧化硅层的薄化层图案化以形成高少数载流子寿命硅的台面并暴露粘结结构上的少数载流子寿命的硅的区域。

    Low and high minority carrier lifetime layers in a single semiconductor structure
    2.
    发明授权
    Low and high minority carrier lifetime layers in a single semiconductor structure 失效
    单个半导体结构中的低和高的少数载流子寿命层

    公开(公告)号：US5521412A

    公开(公告)日：1996-05-28

    申请号：US494858

    申请日：1995-06-26

    申请人： Howard W. Walker ,  Graham A. Garcia

    发明人： Howard W. Walker ,  Graham A. Garcia

    IPC分类号： H01L21/20 ,  H01L27/01 ,  H01L29/00

    CPC分类号： H01L21/2007 ,  Y10S148/012 ,  Y10S148/15

    摘要： A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.

    摘要翻译： 一种用于形成具有低少数载流子寿命层和具有高少数载流子寿命的层的半导体结构的方法包括以下步骤：在蓝宝石蓝宝石处理晶片上的少数少数载流子寿命硅层上形成二氧化硅层 以及另一层二氧化硅在体硅器件晶片的高少数载流子寿命硅层上。 将二氧化硅层接触并退火以形成具有退火层的二氧化硅的结合结构。 然后将体硅层变薄。 通过光刻法将体硅和退火的二氧化硅层的薄化层图案化以形成高少数载流子寿命硅的台面并暴露粘结结构上的少数载流子寿命的硅的区域。

    Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire
    3.
    发明授权
    Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire 失效
    在蓝宝石硅中制造互补垂直双极结晶体管的方法

    公开(公告)号：US5641691A

    公开(公告)日：1997-06-24

    申请号：US415389

    申请日：1995-04-03

    申请人： Eric N. Cartagena ,  Howard W. Walker

    发明人： Eric N. Cartagena ,  Howard W. Walker

    IPC分类号： H01L21/86 ,  H01L27/12 ,  H01L21/265

    CPC分类号： H01L27/1203 ,  H01L21/86 ,  Y10S148/15

    摘要： A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P-type silicon layer. A P+ region created in the N region completes the PNP junction device.

    摘要翻译： 描述了制造互补的垂直双极半导体结构的方法。 在蓝宝石衬底上形成由第一氧化物层分离的N +硅岛和P +硅岛。 通过在N +硅岛上外延生长N型硅层，在N +硅岛上形成NPN结器件。 然后，在N型硅层中形成P区。 在P区域中创建的N +区域完成NPN连接装置。 类似地，通过在P +硅岛上外延生长P型硅层来形成PNP结器件。 然后，在P型硅层中形成N区。 在N区域中创建的P +区域完成PNP连接装置。

    Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
    8.
    发明授权
    Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface 失效
    制造具有氧化硅感测表面的绝缘体上硅传感器的方法

    公开(公告)号：US06387724B1

    公开(公告)日：2002-05-14

    申请号：US09258716

    申请日：1999-02-26

    申请人： Howard W. Walker

    发明人： Howard W. Walker

    IPC分类号： H01L2100

    CPC分类号： G01N27/414

    摘要： An ion-sensitive sensor has an active layer of silicon with source and drain diffusion regions of a field-effect transistor formed therein, patterned layers of silicon oxide and metal on one side of the active silicon layer, and a layer of insulative support material on the metal and silicon oxide layers. A continuous layer of silicon oxide on the other side of the active silicon layer has an exposed surface in the region of the field-effect transistor so that surface charge is formed in the exposed area of the continuous silicon oxide layer when placed in contact with an electrolyte solution. The surface charge induces a channel in the undiffused channel region between the source and drain regions, enabling the flow of current between source and drain contacts under proper bias conditions. The sensor is fabricated by a process that begins with the formation of a field-effect transistor on an active silicon layer of a silicon-on-insulator (SOI) wafer, and the subsequent formation of an insulative support layer over the active silicon layer. The substrate silicon of the SOI wafer is then removed, either by chemical or mechanical means, to expose the buried silicon oxide layer of the SOI wafer. The exposed oxide may form the ion-sensitive surface of the sensor, or additional modification treatment may be done to improve various characteristics of the sensing surface.

    摘要翻译： 离子敏感传感器具有硅的有源层，其中形成有场效应晶体管的源极和漏极扩散区，在活性硅层的一侧上形成氧化硅和金属的图案化层，以及一层绝缘支撑材料 金属和氧化硅层。 在有源硅层的另一侧上的连续的氧化硅层在场效应晶体管的区域中具有暴露表面，使得当连续氧化硅层的暴露区域与 电解液。 表面电荷在源极和漏极区域之间的未扩散通道区域中产生通道，使得能够在适当的偏置条件下在源极和漏极接触之间流动电流。 该传感器是通过在绝缘体上硅（SOI）晶片的有源硅层上形成场效应晶体管，随后在有源硅层上形成绝缘支撑层的工艺制造的。 然后通过化学或机械方法去除SOI晶片的衬底硅，以暴露SOI晶片的掩埋氧化硅层。 暴露的氧化物可以形成传感器的离子敏感表面，或者可以进行另外的改进处理以改善感测表面的各种特性。

    Catalytic synthesis of olefins from paraffins
    9.
    发明授权
    Catalytic synthesis of olefins from paraffins 失效
    从链烷烃催化合成烯烃

    公开(公告)号：US4751344A

    公开(公告)日：1988-06-14

    申请号：US37231

    申请日：1987-04-16

    申请人： Howard W. Walker

    发明人： Howard W. Walker

    IPC分类号： C07C5/333 ,  C07C5/52 ,  C07C5/02

    CPC分类号： C07C5/333 ,  C07C5/52 ,  C07C2531/22 ,  Y10S526/943

    摘要： Saturated hydrocarbon is transformed catalytically into olefinic hydrocarbon of corresponding skeletal configuration by reacting the saturated hydrocarbon with a suitable alkene cyclopentadienyl or alkene arene transition metal molecular complex, such as bis(ethylene)pentamethylcyclopentadienyliridium, bis(ethylene)pentamethylcyclopentadienylrhodium and bis(ethylene)hexamethylbenzene osmium in the presence of free alkene as hydrogen acceptor. The reaction may be performed photochemically under irradiation with ultraviolet light or it may be performed thermolytically under application of heat. The catalyst may be charged to the reaction as a preformed alkene cyclopentadienyl or alkene arene transition metal molecular complex or the catalyst may be formed in situ in the reaction mixture via displacement of ligand from a suitable transition metal complex containing the displaceable ligand, such as dicarbonylpentamethylcyclopentadienyliridium or cyclooctadienepentamethylcyclopentadienyliridium.