Antireflective composition for photoresists
    1.
    发明授权
    Antireflective composition for photoresists 有权
    用于光致抗蚀剂的抗反射组合物

    公开(公告)号:US08551686B2

    公开(公告)日:2013-10-08

    申请号:US12609222

    申请日:2009-10-30

    摘要: The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R′ is a group of structure (2), R″ is independently selected from hydrogen, a moiety of structure (2), Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y′ is independently a (C1-C20) hydrocarbylene linking moiety, where structure (2) is where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition.

    摘要翻译: 本发明涉及一种用于光致抗蚀剂层的抗反射涂料组合物,其包含聚合物,交联剂和酸产生剂,其中聚合物包含至少一个结构单元1,其中X是选自非芳族(A) 部分,芳族(P)部分及其混合物,R'是结构(2)的基团,R“独立地选自氢,结构(2)的部分,Z和W-OH,其中Z是( C1-C20)烃基部分,W是(C1-C20)亚烃基连接部分,Y'独立地是(C1-C20)亚烃基连接部分,其中结构(2)是其中R 1和R 2独立地选自H 和C 1 -C 4烷基,L是有机烃基。 本发明还涉及一种用于对抗反射涂料组合物进行成像的方法。

    Antireflective Composition for Photoresists
    2.
    发明申请
    Antireflective Composition for Photoresists 有权
    用于光致抗蚀剂的抗反射组合物

    公开(公告)号:US20110104613A1

    公开(公告)日:2011-05-05

    申请号:US12609222

    申请日:2009-10-30

    IPC分类号: G03F7/20 G03F7/004

    摘要: The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R′ is a group of structure (2), R″ is independently selected from hydrogen, a moiety of structure (2), Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y′ is independently a (C1-C20) hydrocarbylene linking moiety, where structure (2) is where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition.

    摘要翻译: 本发明涉及一种用于光致抗蚀剂层的抗反射涂料组合物,其包含聚合物,交联剂和酸产生剂,其中聚合物包含至少一个结构单元1,其中X是选自非芳族(A) 部分,芳族(P)部分及其混合物,R'是结构(2)的基团,R“独立地选自氢,结构(2)的部分,Z和W-OH,其中Z是(C1 -C 20)烃基部分,W是(C 1 -C 20)亚烃基连接部分,Y'独立地是(C 1 -C 20)亚烃基连接部分,其中结构(2)是其中R 1和R 2独立地选自H和 C1-C4烷基,L是有机烃基。 本发明还涉及一种用于对抗反射涂料组合物进行成像的方法。

    Compositions of neutral layer for directed self assembly block copolymers and processes thereof
    3.
    发明授权
    Compositions of neutral layer for directed self assembly block copolymers and processes thereof 有权
    用于定向自组装嵌段共聚物的中性层组合物及其工艺

    公开(公告)号:US08691925B2

    公开(公告)日:2014-04-08

    申请号:US13243640

    申请日:2011-09-23

    IPC分类号: C08F118/02 G03F7/20 C08L33/12

    摘要: The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.

    摘要翻译: 本发明涉及新型中性层组合物和使用该组合物的方法。 中性层组合物包含至少一种具有至少一个结构单元(1),至少一个结构单元(2)和至少一个结构单元(3)的无规共聚物,其中R1选自 C 1 -C 8烷基,C 1 -C 8氟烷基部分,C 1 -C 8部分氟化烷基,C 4 -C 8环烷基,C 4 -C 8环氟烷基,C 4 -C 8部分氟化环烷基和C 2 -C 8羟烷基; R2,R3和R5独立地选自H,C1-C4烷基,CF3和F; R 4选自H,C 1 -C 8烷基,C 1 -C 8部分氟化烷基和C 1 -C 8氟代烷基,n为1至5,R 6选自H,F,C 1 -C 8烷基 和C 1 -C 8氟烷基,m为1至3。

    Solvent mixtures for antireflective coating compositions for photoresists
    4.
    发明授权
    Solvent mixtures for antireflective coating compositions for photoresists 有权
    用于光致抗蚀剂的抗反射涂料组合物的溶剂混合物

    公开(公告)号:US07824844B2

    公开(公告)日:2010-11-02

    申请号:US11624744

    申请日:2007-01-19

    CPC分类号: G03F7/091 C09D7/20 G03F7/0048

    摘要: The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.

    摘要翻译: 本发明涉及一种抗反射涂料组合物,其能够涂覆在光致抗蚀剂层下面,其中抗反射涂料组合物包含聚合物交联剂和溶剂混合物,其中溶剂混合物包含至少一种主要有机溶剂和至少一种选择的二级有机溶剂 其中R 1,R 3和R 4选自H和C 1 -C 6烷基,R 2,R 5,R 6,R 7,R 8和R 9选自C 1 -C 6烷基, n = 1-5。 本发明还涉及能够涂覆在光致抗蚀剂层下面的抗反射涂料组合物,其中抗反射涂料组合物包含聚合物交联剂和溶剂混合物,其中溶剂混合物包含至少2种有机溶剂,并且其中抗反射涂料组合物具有 在加速老化后,0.2微米的液体颗粒数小于100 / ml。

    Antireflective Coating Compositions Comprising Siloxane Polymer
    5.
    发明申请
    Antireflective Coating Compositions Comprising Siloxane Polymer 审中-公开
    包含硅氧烷聚合物的抗反射涂料组合物

    公开(公告)号:US20070298349A1

    公开(公告)日:2007-12-27

    申请号:US11425813

    申请日:2006-06-22

    IPC分类号: G03C1/00

    摘要: The present invention relates to a novel antireflective coating composition for forming an underlayer for a photoresist comprising an acid generator and a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1), where m is 0 or 1, W and W′ are independently a valence bond or a connecting group linking the cyclic ether to the silicon of the polymer and L is selected from hydrogen, W′ and W, or L and W′ are combined to comprise a cycloaliphatic linking group linking the cyclic ether to the silicon of the polymer. The invention also relates to a process for imaging the photoresist coated over the novel antireflective coating composition and provides good lithographic results. The invention further relates to a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1).

    摘要翻译: 本发明涉及一种用于形成光致抗蚀剂底层的新型抗反射涂料组合物,其包含酸产生剂和新型硅氧烷聚合物,其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构(1)的自交联官能团, 其中m为0或1,W和W'独立地为价键或连接环状醚与聚合物硅的连接基团,L选自氢,W'和W,或L和W'组合 包括将环醚与聚合物的硅连接的脂环族连接基团。 本发明还涉及一种用于对涂覆在新型抗反射涂料组合物上的光致抗蚀剂进行成像的方法,并提供良好的光刻结果。 本发明还涉及新的硅氧烷聚合物,其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构(1)的自交联官能团。

    Simple repair method for phase shifting masks
    6.
    发明授权
    Simple repair method for phase shifting masks 失效
    相位掩模的简单修复方法

    公开(公告)号:US5795685A

    公开(公告)日:1998-08-18

    申请号:US783631

    申请日:1997-01-14

    CPC分类号: G03F1/26 G03F1/72

    摘要: A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.

    摘要翻译: 一种用于校正用于光刻中的相移掩模中的缺陷的方法和装置。 更具体地,本发明的方法包括创建包含移相器的第二修复掩模。 围绕第一掩模上的缺陷的区域变得不透明。 位于这些缺陷区域中的设计电路被复制到第二掩模上。 在第二曝光期间,将设计电路放置在半导体晶片上。 因此,该方法和装置为困难的问题提供了便宜的解决方案。

    Positive-Working Photoimageable Bottom Antireflective Coating
    8.
    发明申请
    Positive-Working Photoimageable Bottom Antireflective Coating 有权
    正面照相底部防反射涂层

    公开(公告)号:US20110076626A1

    公开(公告)日:2011-03-31

    申请号:US12570923

    申请日:2009-09-30

    IPC分类号: G03F7/00 G03C1/00

    CPC分类号: G03F7/091

    摘要: The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

    摘要翻译: 本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物,其包含(i)可溶于涂布溶剂中的聚合物A,其包含发色团,交联部分和任选的可裂解基团, 在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; (ii)至少一种光致酸发生剂; (iii)交联剂; (iv)任选的热酸产生剂; (v)聚合物B,其在显影前可溶于碱性水溶液,其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; (vi)涂料溶剂组合物,和(vii)任选的猝灭剂。 本发明还涉及用于对抗反射涂层进行成像的方法。

    Process and apparatus to adjust exposure dose in lithography systems
    10.
    发明授权
    Process and apparatus to adjust exposure dose in lithography systems 失效
    在光刻系统中调整曝光剂量的方法和装置

    公开(公告)号:US06346979B1

    公开(公告)日:2002-02-12

    申请号:US09270696

    申请日:1999-03-17

    IPC分类号: G03B2742

    CPC分类号: G03F7/70558 G03F7/70358

    摘要: A process and apparatus for dynamically adjusting the exposure dose on a photosensitive coating at a localized area within an exposure field in a step-and-scan lithography system. The process and apparatus form a pattern on a photosensitive substrate, such as used in the integrated circuit manufacturing industry. The exposure dose is adjusted at a localized area by a segmented slit system or an array of light-transmitting pixels located across the exposure field. The slit segments or individual pixels are automatically controlled in response to data obtained regarding the uniformity of the projection optics system or the mask pattern.

    摘要翻译: 一种用于在步进扫描光刻系统中的曝光场内的局部区域上动态调节感光涂层上的曝光剂量的方法和装置。 该工艺和设备在诸如在集成电路制造工业中使用的感光基底上形成图案。 通过分段狭缝系统或位于曝光区域周围的透光像素阵列在局部区域调节曝光剂量。 响应于关于投影光学系统或掩模图案的均匀性获得的数据,自动控制狭缝段或单个像素。