公开(公告)号：US20100267225A1

公开(公告)日：2010-10-21

申请号：US12385658

申请日：2009-04-15

申请人： Hyo-san Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Dae-hyuk Kang ,  Jeong-nam Han ,  Jung-jae Myung ,  Hyung-pyo Hong ,  Hun-pyo Hong

发明人： Hyo-san Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Dae-hyuk Kang ,  Jeong-nam Han ,  Jung-jae Myung ,  Hyung-pyo Hong ,  Hun-pyo Hong

IPC分类号： H01L21/265 ,  H01L21/306

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/0206 ,  H01L21/02071

摘要： A method of manufacturing a semiconductor device, the method including forming a photoresist film on a substrate, and removing the photoresist film from the substrate using a composition that includes a sulfuric acid solution, a hydrogen peroxide solution, and a corrosion inhibitor.

摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底上形成光致抗蚀剂膜，并且使用包含硫酸溶液，过氧化氢溶液和腐蚀抑制剂的组合物从衬底去除光致抗蚀剂膜。

公开(公告)号：US08951383B2

公开(公告)日：2015-02-10

申请号：US12973963

申请日：2010-12-21

申请人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： C23F1/08 ,  H01L21/67

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US20110083807A1

公开(公告)日：2011-04-14

申请号：US12973963

申请日：2010-12-21

申请人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： C23F1/08

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US20150162221A1

公开(公告)日：2015-06-11

申请号：US14580513

申请日：2014-12-23

申请人： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US07857939B2

公开(公告)日：2010-12-28

申请号：US11725829

申请日：2007-03-20

申请人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： B67D5/54

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US20080029159A1

公开(公告)日：2008-02-07

申请号：US11725829

申请日：2007-03-20

申请人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： B67D5/54

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US06610596B1

公开(公告)日：2003-08-26

申请号：US09662120

申请日：2000-09-14

申请人： Jong-won Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Sang-rok Hah

发明人： Jong-won Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Sang-rok Hah

IPC分类号： H01L2144

CPC分类号： H01L21/7684 ,  H01L21/76879

摘要： A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor device manufactured by this method is also provided. In the method of forming a metal interconnection, a recess region is formed in a portion of an insulation layer formed over a substrate, i.e., where a metal interconnection layer will be formed. A diffusion prevention layer is formed over the substrate, the insulation layer, and the recess region. Then, a metal seed layer is formed over the diffusion prevention layer only in the recess region using a chemical mechanical polishing process or an etch back process. A conductive plating layer is then formed on the metal seed layer only in the recess region. Thereafter, surface polarization is performed to form a metal interconnection layer in the recess region. The plating layer may be formed after forming the seed layer only in the bottom portion of the recess region.

摘要翻译： 提供了一种使用电镀工艺形成金属互连的方法，其可以通过减少化学机械抛光工艺中所需的抛光来提高半导体器件的生产能力和可靠性。 还提供了通过该方法制造的半导体器件。 在形成金属互连的方法中，在形成在基板上的绝缘层的一部分中，即将形成金属互连层的区域中形成凹陷区域。 在基板，绝缘层和凹部区域上形成扩散防止层。 然后，使用化学机械抛光工艺或回蚀工艺，仅在凹陷区域中在扩散防止层上形成金属种子层。 然后在金属种子层上仅在凹陷区域中形成导电镀层。 此后，进行表面极化以在凹部区域中形成金属互连层。 可以在仅在凹部的底部形成种子层之后形成镀层。

公开(公告)号：US20120064727A1

公开(公告)日：2012-03-15

申请号：US13225696

申请日：2011-09-06

申请人： Jung-min Oh ,  Kun-tack Lee ,  Hyo-san Lee ,  Young-hoo Kim ,  Jung-won Lee ,  Sang-won Bae ,  Yong-jhin Cho

发明人： Jung-min Oh ,  Kun-tack Lee ,  Hyo-san Lee ,  Young-hoo Kim ,  Jung-won Lee ,  Sang-won Bae ,  Yong-jhin Cho

IPC分类号： H01L21/306 ,  B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/02101 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67742 ,  H01L21/67748

摘要： Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.

摘要翻译： 衬底处理设备包括用溶液（液体）处理衬底的湿处理设备，从湿处理设备离散的干燥（处理）设备，以及使用超临界流体干燥衬底和转移装置。 在处理基板之后，通过转移装置从湿处理装置将基板提取出来，并且将基板通过装置湿润地转移到干燥处理装置。 为此，可以使用各种元件/方法来使衬底保持湿润或湿润衬底。 在任何情况下，当衬底从湿处理设备转移到干燥设备时，防止衬底自然干燥，即从空气干燥。 因此，设备和方法可以防止基底上的水斑和精细结构的倾斜等缺陷。

公开(公告)号：US20090117499A1

公开(公告)日：2009-05-07

申请号：US12232594

申请日：2008-09-19

申请人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

发明人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

IPC分类号： G03F7/20 ,  C11D3/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

摘要翻译： 根据示例性实施方式的用于浸没式光刻系统的清洁溶液可以包括醚类溶剂，醇类溶剂和半水性溶剂。 在浸没式光刻系统中，可以使用浸没流体根据浸没光刻工艺来曝光涂覆有光致抗蚀剂膜的多个晶片。 在曝光过程中浸入液接触的区域可能会积聚污染物。 因此，可以利用根据示例性实施例的清洗溶液洗涤曝光过程中浸入液接触的区域，以便减少或防止浸没光刻系统中的缺陷。

公开(公告)号：US07488688B2

公开(公告)日：2009-02-10

申请号：US10997902

申请日：2004-11-29

申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/02057 ,  H01L21/31116

摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。