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公开(公告)号：US09903651B2
公开(公告)日：2018-02-27
申请号：US14556969
申请日：2014-12-01
Applicant: Yong-Myung Jun , Yong-Sun Ko , Kun-Tack Lee , Il-Sang Lee , Ji-Hoon Jeong , Yong-Jhin Cho , Jin-Suk Hong
Inventor： Yong-Myung Jun , Yong-Sun Ko , Kun-Tack Lee , Il-Sang Lee , Ji-Hoon Jeong , Yong-Jhin Cho , Jin-Suk Hong
CPC classification number: F26B25/008 , C23C16/4409 , F16J15/022 , F26B25/14 , H01L21/67017 , H01L21/67028 , H01L21/67034
Abstract: A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body.
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2.发明授权公开(公告)号：US08795541B2
公开(公告)日：2014-08-05
申请号：US13314791
申请日：2011-12-08
Applicant: Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
Inventor： Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
CPC classification number: H01L21/67023 , B08B7/0021 , H01L21/0206 , H01L21/02104 , H01L21/31111 , H01L22/00 , H01L22/26 , H01L27/10852 , H01L28/90
Abstract: In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.
Abstract translation: 在超临界流体法中，将超临界流体供应到处理室中。 当超临界流体处理进行时，超临界流体从处理室排出。 在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。 超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。
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Patent Agency Ranking
公开(公告)号：US20150176897A1
公开(公告)日：2015-06-25
申请号：US14556969
申请日：2014-12-01
Applicant: Yong-Myung JUN , Yong-Sun KO , Kun-Tack LEE , Il-Sang LEE , Ji-Hoon JEONG , Yong-Jhin CHO , Jin-Suk HONG
Inventor： Yong-Myung JUN , Yong-Sun KO , Kun-Tack LEE , Il-Sang LEE , Ji-Hoon JEONG , Yong-Jhin CHO , Jin-Suk HONG
CPC classification number: F26B25/008 , C23C16/4409 , F16J15/022 , F26B25/14 , H01L21/67017 , H01L21/67028 , H01L21/67034
Abstract: A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body.
Abstract translation: 密封构件包括具有环形的主体，从所述主体的下端突出的下接触部分，并且具有至少一个凹部，所述凹部设置在所述下接触部分的下表面中并沿着所述凹部的径向方向延伸 主体和沿着身体的外侧部分从身体向外突出的外接触部分。
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公开(公告)号：US20140262024A1
公开(公告)日：2014-09-18
申请号：US13844149
申请日：2013-03-15
Applicant: Yong-Jhin CHO , YONGSUN KO , KYOUNGSEOB KIM , KWANGSU KIM , SeokHoon KIM , Jung-Min OH , KUNTACK LEE , WONHO JANG , YONGMYUNG JUN
Inventor： Yong-Jhin CHO , YONGSUN KO , KYOUNGSEOB KIM , KWANGSU KIM , SeokHoon KIM , Jung-Min OH , KUNTACK LEE , WONHO JANG , YONGMYUNG JUN
IPC: H01L21/67
CPC classification number: H01L21/67017 , H01L21/67051 , H01L21/6708
Abstract: Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.
Abstract translation: 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区，以及超临界过程区，其中超临界流体被膨胀，然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。
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5.发明申请公开(公告)号：US20120152898A1
公开(公告)日：2012-06-21
申请号：US13314791
申请日：2011-12-08
Applicant: YONG JHIN CHO , Kun-Tack LEE , Hyo-San LEE , Young-Hoo KIM , Jung-Won LEE , Sang-Won BAE , Jung-Min OH
Inventor： YONG JHIN CHO , Kun-Tack LEE , Hyo-San LEE , Young-Hoo KIM , Jung-Won LEE , Sang-Won BAE , Jung-Min OH
CPC classification number: H01L21/67023 , B08B7/0021 , H01L21/0206 , H01L21/02104 , H01L21/31111 , H01L22/00 , H01L22/26 , H01L27/10852 , H01L28/90
Abstract: In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.
Abstract translation: 在超临界流体法中，将超临界流体供应到处理室中。 当超临界流体处理进行时，超临界流体从处理室排出。 在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。 超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。
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公开(公告)号：US09027576B2
公开(公告)日：2015-05-12
申请号：US13844149
申请日：2013-03-15
Applicant: Yong-Jhin Cho , Yongsun Ko , Kyoungseob Kim , Kwangsu Kim , SeokHoon Kim , Jung-Min Oh , Kuntack Lee , Wonho Jang , Yongmyung Jun
Inventor： Yong-Jhin Cho , Yongsun Ko , Kyoungseob Kim , Kwangsu Kim , SeokHoon Kim , Jung-Min Oh , Kuntack Lee , Wonho Jang , Yongmyung Jun
IPC: H01L21/67
CPC classification number: H01L21/67017 , H01L21/67051 , H01L21/6708
Abstract: Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.
Abstract translation: 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区，以及超临界过程区，其中超临界流体被膨胀，然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。
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7.发明申请SUBSTRATE TREATMENT EQUIPMENT AND METHOD OF TREATING SUBSTRATE USING THE SAME 审中-公开基板处理设备和使用该基板处理基板的方法公开(公告)号：US20120064727A1
公开(公告)日：2012-03-15
申请号：US13225696
申请日：2011-09-06
Applicant: Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
Inventor： Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
IPC: H01L21/306 , B08B3/00
CPC classification number: H01L21/02057 , H01L21/02101 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/67742 , H01L21/67748
Abstract: Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.
Abstract translation: 衬底处理设备包括用溶液（液体）处理衬底的湿处理设备，从湿处理设备离散的干燥（处理）设备，以及使用超临界流体干燥衬底和转移装置。 在处理基板之后，通过转移装置从湿处理装置将基板提取出来，并且将基板通过装置湿润地转移到干燥处理装置。 为此，可以使用各种元件/方法来使衬底保持湿润或湿润衬底。 在任何情况下，当衬底从湿处理设备转移到干燥设备时，防止衬底自然干燥，即从空气干燥。 因此，设备和方法可以防止基底上的水斑和精细结构的倾斜等缺陷。
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