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    Method of forming metal interconnection using plating and semiconductor device manufactured by the method
    1.
    发明授权
    Method of forming metal interconnection using plating and semiconductor device manufactured by the method 有权
    使用该方法制造的使用电镀和半导体器件形成金属互连的方法

    公开(公告)号：US06610596B1

    公开(公告)日：2003-08-26

    申请号：US09662120

    申请日：2000-09-14

    申请人： Jong-won Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Sang-rok Hah

    发明人： Jong-won Lee ,  Bo-un Yoon ,  Kun-tack Lee ,  Sang-rok Hah

    IPC分类号： H01L2144

    CPC分类号： H01L21/7684 ,  H01L21/76879

    摘要： A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor device manufactured by this method is also provided. In the method of forming a metal interconnection, a recess region is formed in a portion of an insulation layer formed over a substrate, i.e., where a metal interconnection layer will be formed. A diffusion prevention layer is formed over the substrate, the insulation layer, and the recess region. Then, a metal seed layer is formed over the diffusion prevention layer only in the recess region using a chemical mechanical polishing process or an etch back process. A conductive plating layer is then formed on the metal seed layer only in the recess region. Thereafter, surface polarization is performed to form a metal interconnection layer in the recess region. The plating layer may be formed after forming the seed layer only in the bottom portion of the recess region.

    摘要翻译： 提供了一种使用电镀工艺形成金属互连的方法，其可以通过减少化学机械抛光工艺中所需的抛光来提高半导体器件的生产能力和可靠性。 还提供了通过该方法制造的半导体器件。 在形成金属互连的方法中，在形成在基板上的绝缘层的一部分中，即将形成金属互连层的区域中形成凹陷区域。 在基板，绝缘层和凹部区域上形成扩散防止层。 然后，使用化学机械抛光工艺或回蚀工艺，仅在凹陷区域中在扩散防止层上形成金属种子层。 然后在金属种子层上仅在凹陷区域中形成导电镀层。 此后，进行表面极化以在凹部区域中形成金属互连层。 可以在仅在凹部的底部形成种子层之后形成镀层。

    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same
    4.
    发明授权
    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same 有权
    晶圆抛光浆和化学机械抛光（CMP）方法使用相同

    公开(公告)号：US06514862B2

    公开(公告)日：2003-02-04

    申请号：US09977239

    申请日：2001-10-16

    申请人： Jae-dong Lee ,  Jong-won Lee ,  Bo-un Yoon ,  Sang-rok Hah

    发明人： Jae-dong Lee ,  Jong-won Lee ,  Bo-un Yoon ,  Sang-rok Hah

    IPC分类号： H01L21302

    CPC分类号： C09G1/02 ,  H01L21/31053

    摘要： A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.

    摘要翻译： 化学机械抛光浆料包括具有{N-（R1R2R3R4）} + X-形式的季铵化合物的添加剂，其中R 1，R 2，R 3和R 4是自由基，X是包含卤素的阴离子衍生物 元素。 优选地，季铵化合物是[（CH 3）3 NHCH 2 CH 2 OH] Cl，[（CH 3）3 NHCH 2 CH 2 OH] 1，[（CH 3）3 NHCH 2 CH 2 OH] Br，[（CH 3）3 NHCH 2 CH 2 OH] CO 3及其混合物之一。 该浆料还可以包括由碱如KOH，NH 4 OH和（CH 3）4 NOH形成的pH控制剂，以及酸如HCl，H 2 SO 4，H 3 PO 4和HNO 3。 此外，pH控制剂可以包括[（CH 3）3 NHCH 2 OH] OH。 浆料还可以包括表面活性剂如十六烷基二甲基溴化铵，鲸蜡基二甲基溴化铵，聚环氧乙烷，聚乙烯醇或聚乙二醇。

    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
    6.
    发明授权
    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
    化学/机械抛光浆料和化学机械抛光工艺以及采用其的浅沟槽隔离工艺

    公开(公告)号：US06914001B2

    公开(公告)日：2005-07-05

    申请号：US10351539

    申请日：2003-01-27

    申请人： Jong-won Lee ,  Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    发明人： Jong-won Lee ,  Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    IPC分类号： B24B57/02 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/302

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    摘要： A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

    摘要翻译： CMP氧化物浆料包括含有磨料颗粒和两种或更多种不同钝化剂的水溶液。 优选地，水溶液由去离子水组成，磨料颗粒是选自二氧化铈，二氧化硅，氧化铝，二氧化钛，氧化锆和氧化锗的金属氧化物。 此外，第一钝化剂可以是阴离子，阳离子或非离子表面活性剂，第二钝化剂可以是邻苯二甲酸及其盐。 在一个实例中，第一钝化剂是聚乙烯基磺酸，第二钝化剂是邻苯二甲酸氢钾。 该浆料表现出高的氧化物与氮化硅的去除选择性。

    Chemical mechanical polishing slurry
    7.
    发明授权
    Chemical mechanical polishing slurry 有权
    化学机械抛光浆

    公开(公告)号：US06855267B2

    公开(公告)日：2005-02-15

    申请号：US10023948

    申请日：2001-12-21

    申请人： Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    发明人： Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    IPC分类号： B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

    摘要翻译： 包括研磨剂，去离子水，pH控制剂和聚乙烯亚胺的抛光浆料可以控制在导电层的化学机械抛光（CMP）期间同时暴露的氧化硅层和氮化硅层的去除速率。 可以通过控制胆碱衍生物的量来控制氧化硅层与氮化硅层的去除速率的相对比例。