公开(公告)号：US3626390A

公开(公告)日：1971-12-07

申请号：US3626390D

申请日：1969-11-13

Applicant: IBM

Inventor： CHANG JOSEPH J ,  HO IRVING TZE ,  VOGL NORBERT G JR ,  WU BEVAN P F

IPC: G11C11/411 ,  H01L21/74 ,  H01L27/07 ,  H03K3/288 ,  G11C11/40

CPC classification number: H03K3/288 ,  G11C11/4116 ,  H01L21/74 ,  H01L27/0755 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/136

Abstract: A nondestructive read-integrated circuit memory cell consisting of a pair of cross coupled transistors. The junctions between the collectors of the transistors and the intrinsic epitaxial layer is utilized to provide isolation between the transistors. The transistors are formed by a triple-diffusion process wherein the collector region contacts a buried layer of opposite semiconductivity relative to the semiconductivity of the substrate structure. An epitaxial growth being of the same semiconductivity as the buried layer region is utilized as both a resistive material between the input and the buried layer and to form a diode gradient between the epitaxial region and the collector region of the transistors. The buried region forms a diode junction with the collector regions of the transistor to allow a bilevel operation of the memory cell.

公开(公告)号：US3865652A

公开(公告)日：1975-02-11

申请号：US40374573

申请日：1973-10-05

Applicant: IBM

Inventor： AGUSTA BENJAMIN ,  CHANG JOSEPH J ,  JOSHI MADHUKAR L

IPC: H01L21/00 ,  H01L21/8234 ,  H01L27/105 ,  H01L29/00 ,  H01L29/10 ,  H01L29/423 ,  H01L29/768 ,  H01L7/44

CPC classification number: H01L29/76866 ,  H01L21/00 ,  H01L21/823406 ,  H01L27/1057 ,  H01L29/00 ,  H01L29/1062 ,  H01L29/42396 ,  Y10S148/053 ,  Y10S148/114 ,  Y10S148/122

Abstract: A semiconductor device containing in a single semiconductor body a self-aligned Field Effect Transistor and a Charge-Coupled Array having an improved capacity for storing charges. The device is formed by depositing both polysilicon and silicon nitride layers over a silicon dioxide layer on the surface of a silicon body and selectively etching these layers so that suitable dopants may be diffused or ion-implanted into selected areas of the underlying silicon body to form, in the same semiconductor body, an improved charge-coupled array having an improved self-aligned Field Effect Transistor associated therewith. This process not only results in a device in which the chance of an inversion layer under the oxide on the surface of the device is substantially reduced, but also provides a self-aligned Field Effect Transistor having a thinner gate oxide and a charge-coupled array that has an increased capacity for storing charges. The improved array so formed also has, during operation, zero spaced depletion regions so that unwanted electrical discontinuities between or within the depletion regions of the charge-coupled array are avoided. Because zero spacing is achieved by using these thin conducting layers, the metal phase lines can be made narrow thus leaving openings in the charge transfer channel making the device particularly suitable for imaging applications.

Abstract translation: 一种半导体器件，其在单个半导体本体中包含具有改善的用于存储电荷的容量的自对准场效应晶体管和电荷耦合阵列。 该器件通过在硅体表面上的二氧化硅层上沉积多晶硅和氮化硅层而形成，并且选择性地蚀刻这些层，使得合适的掺杂剂可以扩散或离子注入到下面的硅体的选定区域中以形成 在相同的半导体本体中，改进的电荷耦合阵列具有与其相关联的改进的自对准场效应晶体管。 该方法不仅导致其中在器件表面上的氧化物下面的反型层的机会大大降低的装置，而且还提供具有较薄栅极氧化物和电荷耦合阵列的自对准场效应晶体管 这增加了存储费用的能力。 这样形成的改进的阵列在操作期间还具有零间隔的耗尽区域，从而避免了在电荷耦合阵列的耗尽区域之间或内部的不期望的电中断。 因为通过使用这些薄导电层来实现零间隔，所以可以使金属相线变窄，从而在电荷转移通道中留下开口，使得该器件特别适用于成像应用。

公开(公告)号：US3621346A

公开(公告)日：1971-11-16

申请号：US3621346D

申请日：1970-01-28

Applicant: IBM

Inventor： CHANG JOSEPH J ,  VORA MADHUKAR B

IPC: H01L21/763 ,  H01L21/00 ,  H01L21/205 ,  H01L21/331 ,  H01L21/74 ,  H01L23/535 ,  H01L27/00 ,  H01L29/73 ,  H01L11/00

CPC classification number: H01L21/00 ,  H01L21/743 ,  H01L23/535 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S148/145 ,  H01L2924/00

Abstract: A process wherein epitaxial silicon is grown on a substrate of single-crystal silicon with islands of silicon dioxide thereon, whereby single crystal epitaxial material is grown over the single-crystal substrate areas, but polycrystalline silicon is grown over the silicon dioxide islands. Since impurity diffusion occurs more rapidly through polycrystalline material than through single-crystalline material diffusion schemes can be obtained using the rapid diffusion pathway provided by the polycrystalline material to provide subsurface configurations which are completely enclosed by single-crystal material, for instance, a buried subcollector can be formed by growing polycrystalline silicon material horizontally, extending a narrow polycrystalline channel upward to the device surface, and subsequently diffusing impurities down through the narrow vertical polycrystalline channel into the lateral polycrystalline subcollector. Further, an electrical underpass can be formed which has a very low resistance by again using the rapid diffusion characteristics of polycrystalline silicon to grow polycrystalline silicon of the desired shape which can be rapidly diffused to provide, in comparison to background, a high conductivity path. By control of the substrate crystalline orientation, polycrystalline material can be grown which terminates because of sidewall convergence. This is desirable where it is required to terminate polycrystalline growth and begin single-crystal growth without any alteration in process conditions. The devices described are also claimed.