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1.发明授权Method for forming electrical connections to a solid state device including electrical packaging arrangement therefor 失效用于形成与固态器件的电连接的方法，包括其电气封装装置
公开(公告)号：US3325882A
公开(公告)日：1967-06-20
申请号：US46618265
申请日：1965-06-23
Applicant: IBM
Inventor： CHARLES CHIOU , GARCIA JOSEPH R
CPC classification number: H01L24/82 , H01L24/24 , H01L2224/24227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01058 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , Y10S148/05 , Y10S148/085 , Y10T29/49155 , Y10T29/4981 , H01L2924/00
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公开(公告)号：US3400014A
公开(公告)日：1968-09-03
申请号：US39660464
申请日：1964-09-15
Applicant: IBM
Inventor： BLUMBERG REX H , CASWELL HOLLIS L , CHARLES CHIOU
CPC classification number: G11C11/44 , C23C14/541 , C23C14/545 , H01L39/24
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3.发明授权Process of vapor depositing and annealing vapor deposited layers of tin-germanium and indium-germanium metastable solid solutions 失效气相沉积和退火气相沉积层的锡 - 锗和铟 - 锗亚稳态固溶体的工艺
公开(公告)号：US3244557A
公开(公告)日：1966-04-05
申请号：US30995663
申请日：1963-09-19
Applicant: IBM
Inventor： CHARLES CHIOU , CONNELL RICHARD A , SERAPHIM DONALD P
CPC classification number: C23C14/14 , C23C14/58 , C23C14/5806 , C23C14/5893 , G11C11/44 , H01L39/00 , Y10S148/064 , Y10S148/065 , Y10S148/158 , Y10S148/169 , Y10S148/17 , Y10S420/903 , Y10S505/819
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公开(公告)号：US3058852A
公开(公告)日：1962-10-16
申请号：US1864760
申请日：1960-03-30
Applicant: IBM
Inventor： CASWELL HOLLIS L , CHARLES CHIOU
CPC classification number: C23C14/5806 , C23C14/042 , C23C14/044 , C23C14/58 , C23C14/5873 , C23F1/02 , G11C11/44 , H01B1/00 , H01L39/00 , H01L39/18 , H01L39/24 , Y10S336/01 , Y10S505/82 , Y10S505/833 , Y10S505/882 , Y10T29/49014 , Y10T428/24355 , Y10T428/24488
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