公开(公告)号：US20090314521A1

公开(公告)日：2009-12-24

申请号：US12550529

申请日：2009-08-31

Applicant: Martin GIJS ,  Jean-Pierre Reyal ,  Farid Amalou

Inventor： Martin GIJS ,  Jean-Pierre Reyal ,  Farid Amalou

IPC: H05K1/00 ,  H05K3/36

CPC classification number: H01F41/046 ,  H01F10/131 ,  H01F10/138 ,  H01F10/265 ,  H01F17/0033 ,  H01F41/0233 ,  H01F41/042 ,  H05K3/0044 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T83/0591

Abstract: Method for producing parts for passive electronic components according to which: a laminated strip (1) is produced which is constituted by at least one stack of a thin metal strip and a layer of adhesive material, and at least one part (6) is cut from the laminated strip (1), the cutting operation being carried out using a method which comprises at least one step for etching by means of sandblasting. Parts produced.

Abstract translation: 一种无源电子部件的制造方法，其特征在于：制造由至少一层薄金属带和粘接材料层构成的层压条（1），并且切断至少一部分（6） 从层压条（1）开始，使用包括通过喷砂蚀刻的至少一个步骤的方法进行切割操作。 零件生产。

公开(公告)号：US07570145B2

公开(公告)日：2009-08-04

申请号：US11933389

申请日：2007-10-31

Applicant: Jien-Wei Yeh ,  Wen-Chen Chang ,  Chih-Chao Yang ,  Nai-Wen Cheng

Inventor： Jien-Wei Yeh ,  Wen-Chen Chang ,  Chih-Chao Yang ,  Nai-Wen Cheng

IPC: H01F27/24

CPC classification number: H01F17/0006 ,  H01F10/131 ,  H01F10/138 ,  H01F10/265 ,  H01F2017/0046 ,  H01F2017/0066

Abstract: A magnetic multi-element alloy film adapted to be used in a high-frequency operation is provided. The magnetic multi-element alloy film is employed to improve a Q factor and an inductance value of a thin film inductor operated in high frequency. The design concept of a multi-element high-entropy alloy is introduced into the magnetic multi-element alloy film. With material characteristics including high randomness, nanometer microcrystalline structure, low coercive magnetic field and high resistivity, the magnetic multi-element alloy film can still have favorable soft magnetism when operated in high frequency.

Abstract translation: 提供了适用于高频操作的磁性多元素合金膜。 磁性多元素合金薄膜用于提高高频工作的薄膜电感器的Q因子和电感值。 将多元素高熵合金的设计理念引入到磁性多元素合金薄膜中。 具有高随机性，纳米微晶结构，低矫顽磁场和高电阻率的材料特性，磁性多元素合金膜在高频运行时仍具有良好的软磁性。

公开(公告)号：US20090066467A1

公开(公告)日：2009-03-12

申请号：US11852697

申请日：2007-09-10

Applicant: Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

Inventor： Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

IPC: H01F27/24

CPC classification number: H01F41/046 ,  H01F10/132 ,  H01F10/138 ,  H01F10/265 ,  H01F17/0033

Abstract: A micromagnetic device including a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.

Abstract translation: 一种包括基底和由磁性合金形成在基底上的磁芯层的微磁体装置。 磁性合金包括铁，钴和磷。 钴的含量在1.8〜4.5原子％的范围内。 磷的含量为20.1〜30原子％。 铁的含量基本上是磁性合金的剩余比例。

公开(公告)号：US20040209098A1

公开(公告)日：2004-10-21

申请号：US10842449

申请日：2004-05-11

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Kazuyoshi Kobayashi ,  Kenji Ikeda ,  Masayuki Fujimoto

IPC: B32B025/04

CPC classification number: H01F41/301 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/007 ,  H01F10/132 ,  H01F10/138 ,  H01F10/3227 ,  H01F41/183 ,  H05K9/0084 ,  Y10T428/12493 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/3183 ,  Y10T428/32

Abstract: There are provided a magnetic thin film utilizing a granular film and having excellent high frequency characteristics and a method of manufacturing the same, and a multilayered magnetic film and magnetic components and electronic equipment utilizing the same. A nonreactive sputtering is performed so that there is no oxidation of a magnetic metal, and a saturation magnetization is increased to increase a resonant frequency of permeability. Also, a multi-target simultaneous sputtering is combined with the nonreactive sputtering so that in a granular structure including magnetic grains and an insulating layer a size of the magnetic grains and a thickness of the insulating layer are optimized thereby ensuring a proper magnitude for a crystalline magnetic anisotropy within the grains and excellent soft magnetic properties. Further, the optimization of the thickness of the insulating layer has the effect of improving a resistivity, decreasing an eddy current and improving an exchange interaction between the magnetic grains.

Abstract translation: 提供了利用粒状膜并且具有优异的高频特性的磁性薄膜及其制造方法，以及利用该薄膜的磁性薄膜和磁性部件和电子设备。 执行非反应性溅射，使得不存在磁性金属的氧化，并且增加饱和磁化强度以增加磁导率的共振频率。 此外，多靶同时溅射与非反应性溅射结合，使得在包括磁性颗粒和绝缘层的颗粒结构中，磁性颗粒的尺寸和绝缘层的厚度被优化，从而确保了晶体的适当大小 晶粒内的磁各向异性和优良的软磁特性。 此外，绝缘层的厚度的优化具有提高电阻率，降低涡流和改善磁性颗粒之间的交换相互作用的效果。

公开(公告)号：US6103405A

公开(公告)日：2000-08-15

申请号：US17662

申请日：1998-02-03

Applicant: Hiroshi Tomita

Inventor： Hiroshi Tomita

IPC: H01F10/08 ,  H01F10/13 ,  H01F10/32 ,  H01F17/00 ,  H01L23/522 ,  G11B5/66

CPC classification number: B82Y25/00 ,  H01F10/13 ,  H01F10/138 ,  H01F10/3218 ,  H01F17/0006 ,  H01L23/5227 ,  H01L2924/0002 ,  Y10S428/90

Abstract: A planar inductance element is provided which has good high-frequency magnetic properties and which can be manufactured at high yield. The element has at least one ferromagnetic film which, whose high-frequency properties change only a little when thermal, magnetic and mechanical stresses are applied to them during the manufacture of the element. The film has high process immunity. The film has been formed by applying a stress in a plane of a ferromagnetic film having uniaxial magnetic anisotropy or forming an antiferromagnetic film on such a ferromagnetic film, and by heat-treating the resultant structure in a magnetic field, thereby inducing inplane unidirectional magnetic anisotropy in a prescribed direction. The ferromagnetic film thus formed has its high-frequency permeability improved and its high-frequency loss reduced. In forming the ferromagnetic film, the inplane unidirectional magnetic anisotropy may be induced at an angle of about 30.degree. or about 60.degree. to the longer axis of the rectangular planar inductance element. If so, the high-frequency loss of the film decreases, and the effective high-frequency permeability changes almost nil in spite of an anisotropic stress applied to the film during the manufacture of the planar inductance element.

Abstract translation: 提供了一种具有良好的高频磁性能并可以高产率制造的平面电感元件。 该元件具有至少一个铁磁膜，其在元件的制造过程中当对其施加热，磁和机械应力时，其高频特性仅改变一点。 该片具有较高的工艺免疫力。 通过在具有单轴磁各向异性的铁磁膜的平面中施加应力或在这种铁磁膜上形成反铁磁性膜，并且通过在磁场中热处理所得到的结构，形成膜，从而引起面内单向磁各向异性 在规定的方向。 由此形成的铁磁膜的高频磁导率提高，其高频损耗降低。 在形成铁磁膜时，可以以相对于矩形平面电感元件的长轴大约30度或大约60度的角度诱发面内单向磁各向异性。 如果是这样，则在制造平面电感元件期间，尽管施加到膜上的各向异性的应力，但是膜的高频损耗减小，有效的高频磁导率几乎变化不大。

公开(公告)号：US5780175A

公开(公告)日：1998-07-14

申请号：US595543

申请日：1996-02-02

Applicant: Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

Inventor： Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

IPC: C22C38/00 ,  C22C38/26 ,  C22C38/28 ,  G11B5/127 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/667 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/32 ,  H01F17/00 ,  H01F41/30 ,  H01F10/10

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11B5/1878 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3906 ,  H01F10/002 ,  H01F10/08 ,  H01F10/13 ,  H01F10/138 ,  H01F10/147 ,  H01F10/3204 ,  H01F10/3254 ,  H01F17/0033 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/115

Abstract: The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.

Abstract translation: 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

公开(公告)号：US20230307165A1

公开(公告)日：2023-09-28

申请号：US17997958

申请日：2021-05-04

Applicant: EnaChip inc.

Inventor： Trifon Liakopoulos ,  Amrit Panda

IPC: H01F10/14 ,  H01F10/16 ,  H01F10/13 ,  H01F10/187 ,  H01F41/32

CPC classification number: H01F10/14 ,  H01F10/138 ,  H01F10/16 ,  H01F10/187 ,  H01F41/32

Abstract: A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a substrate, a seed layer over the substrate and a magnetic layer over the seed layer. The magnetic layer includes a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

公开(公告)号：US07667655B2

公开(公告)日：2010-02-23

申请号：US11911764

申请日：2006-04-19

Applicant: Tetsuo Inoue

Inventor： Tetsuo Inoue

IPC: H01Q1/24

CPC classification number: H05K9/0083 ,  H01F10/131 ,  H01F10/138 ,  H01F10/14 ,  H01F10/265 ,  H01Q1/243 ,  H01Q1/52

Abstract: An electromagnetic interference preventing component (18) includes a high-permeability magnetic film in high-frequency in which a real number component μ′ of complex relative permeability at a transmission band frequency of an electronic device (10) incorporating the electromagnetic interference preventing component (18) is 10 or more, tan δ (=μ″/μ′) is 0.1 or less, and a ferromagnetic resonance frequency (fr) is 1.5 times or more of the transmission band frequency. The electromagnetic interference preventing component (18) having the high-permeability magnetic film in high-frequency is disposed in the electronic device (10) having an electromagnetic wave transmitting function, as to selectively decrease the electromagnetic field intensity in directions in which the electromagnetic waves radiated by an electromagnetic wave transmitting part such as an antenna (16) are not required.

Abstract translation: 电磁干扰防止部件（18）包括：高频磁导率磁化膜，其中，包含电磁干扰防止部件的电子设备（10）的传输频带处的复数相对磁导率的实数分量μ' 18）为10以上，tanδ（=μ“/μ'）为0.1以下，铁磁共振频率（fr）为传输频带频率的1.5倍以上。 具有高磁导率磁性膜的电磁干扰防止部件（18）配置在具有电磁波传播功能的电子设备（10）中，以便选择性地降低电磁波的电磁场强度 不需要由诸如天线（16）的电磁波发射部分辐射的辐射。

公开(公告)号：US20090066468A1

公开(公告)日：2009-03-12

申请号：US11852703

申请日：2007-09-10

Applicant: Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

Inventor： Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

IPC: H01F27/24 ,  G05F1/00

CPC classification number: H01F41/046 ,  H01F10/132 ,  H01F10/138 ,  H01F10/265 ,  H01L2224/11

Abstract: A power converter including a power train, a controller and a driver. The power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device interposed between the switch and the output of the power converter. The micromagnetic device includes a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy including iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy. The controller provides a signal to control the duty cycle of the switch. The driver provides a drive signal to the switch as a function of the signal from the controller.

Abstract translation: 一种功率转换器，包括传动系，控制器和驱动器。 动力传动系包括开关，用于进行占空比并为功率转换器提供稳定的输出特性，以及插入在开关和功率转换器的输出端之间的微电磁装置。 该微型磁性器件包括基底和由包括铁，钴和磷的磁性合金在基底上形成的磁芯层。 钴的含量在1.8〜4.5原子％的范围内。 磷的含量为20.1〜30原子％。 铁的含量基本上是磁性合金的剩余比例。 控制器提供一个信号来控制开关的占空比。 驱动器根据来自控制器的信号向开关提供驱动信号。

公开(公告)号：US20090040126A1

公开(公告)日：2009-02-12

申请号：US11911764

申请日：2006-04-19

Applicant: Tetsuo Inoue

Inventor： Tetsuo Inoue

IPC: H01Q1/52

CPC classification number: H05K9/0083 ,  H01F10/131 ,  H01F10/138 ,  H01F10/14 ,  H01F10/265 ,  H01Q1/243 ,  H01Q1/52

Abstract: An electromagnetic interference preventing component (18) includes a high-permeability magnetic film in high-frequency in which a real number component μ′ of complex relative permeability at a transmission band frequency of an electronic device (10) incorporating the electromagnetic interference preventing component (18) is 10 or more, tan δ (=μ″/μ′) is 0.1 or less, and a ferromagnetic resonance frequency (fr) is 1.5 times or more of the transmission band frequency. The electromagnetic interference preventing component (18) having the high-permeability magnetic film in high-frequency is disposed in the electronic device (10) having an electromagnetic wave transmitting function, as to selectively decrease the electromagnetic field intensity in directions in which the electromagnetic waves radiated by an electromagnetic wave transmitting part such as an antenna (16) are not required.

Abstract translation: 电磁干扰防止部件（18）包括高频磁导磁体，其中包含电磁干扰防止部件的电子装置（10）的传输带频率下的复数相对磁导率的实数分量μ' 18）为10以上，tanδ（= mu“/ mu'）为0.1以下，铁磁共振频率（fr）为传输频带频率的1.5倍以上。 具有高磁导率磁性膜的电磁干扰防止部件（18）配置在具有电磁波传播功能的电子设备（10）中，以便选择性地降低电磁波的电磁场强度 不需要由诸如天线（16）的电磁波发射部分辐射的辐射。