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公开(公告)号：US11845883B2
公开(公告)日：2023-12-19
申请号：US17830698
申请日：2022-06-02
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Jauder Jeng , Hsien-Kuang Lin , Ming-Hsueh Chiang , Tien-Shou Shieh , Chi-Fu Tseng
IPC: C09J133/08 , C09J7/29 , C09J133/10 , C09J133/20 , C09J133/26 , C09J139/06 , B32B37/12 , C09J7/38 , B32B17/10
CPC classification number: C09J133/08 , B32B17/10458 , B32B37/1284 , C09J7/29 , C09J7/38 , C09J133/10 , C09J133/20 , C09J133/26 , C09J139/06 , B32B2307/412 , B32B2307/42 , B32B2457/202 , B32B2551/00 , C09J2203/318 , C09J2301/124 , Y10T428/2848 , Y10T428/2891
Abstract: A double-sided optically clear adhesive is provided. The double-sided optically clear adhesive includes a first adhesive layer and a second adhesive layer. The first adhesive layer includes a first resin and a first thermal-crosslinking agent. The first resin includes a hydroxyl group. The first thermal-crosslinking agent includes a first group. The second adhesive layer includes a second resin and a second thermal-crosslinking agent. The second resin includes a hydroxyl group. The second thermal-crosslinking agent includes a second group. The ratio of the equivalent number of the first group of the first thermal-crosslinking agent to the equivalent number of the hydroxyl group of the first resin is represented by r1. The ratio of the equivalent number of the second group of the second thermal-crosslinking agent to the equivalent number of the hydroxyl group of the second resin is represented by r2, wherein r1
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Patent Agency Ranking
公开(公告)号：US11823895B2
公开(公告)日：2023-11-21
申请号：US17500854
申请日：2021-10-13
Inventor： Chen-Hsuan Lu , Chyi-Ming Leu , Nai-Chang Yeh , Chih-Cheng Lin , Chi-Fu Tseng
CPC classification number: H01L21/02274 , C30B25/02 , H01L21/02425 , H01L21/02527 , H01L29/1606
Abstract: A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.
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3.发明授权公开(公告)号：US11753502B2
公开(公告)日：2023-09-12
申请号：US17578080
申请日：2022-01-18
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chi-Fu Tseng , Jauder Jeng , Tien-Shou Shieh , Chin-Hui Chou
CPC classification number: C08G63/78 , C08G2115/00
Abstract: An oligomer is formed by reacting a diacid monomer with (a) epoxy resin or (b) glycidyl methacrylate, wherein the diacid monomer has a chemical structure of
wherein X is —O—,
and each R1 is independently CH3, CH2F, CHF2, or CF3. A composition containing the oligomer can be cured to serve as a sealant of an optoelectronic device, and the sealant can be lifted off by a laser beam irradiation.-
公开(公告)号：US20220115230A1
公开(公告)日：2022-04-14
申请号：US17500854
申请日：2021-10-13
Inventor： Chen-Hsuan Lu , Chyi-Ming Leu , Nai-Chang Yeh , Chih-Cheng Lin , Chi-Fu Tseng
Abstract: A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.
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公开(公告)号：US09209403B2
公开(公告)日：2015-12-08
申请号：US13912172
申请日：2013-06-06
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chi-Fu Tseng , Chyi-Ming Leu , Hsueh-Yi Liao , Yung-Lung Tseng
IPC: H01L31/0392 , C08G73/10 , H01L51/00 , C08L79/08
CPC classification number: H01L51/0035 , C08G73/1039 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/1064 , C08G73/1075 , C08G73/1078 , C08L79/08 , H01L31/03926 , Y02E10/50 , Y10T428/10 , Y10T428/31721
Abstract: A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I) wherein B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4, directly fabricating a thin film transistor (TFT) on one of the first and second substrates which includes the polyimide polymer of Formula (I), and disposing a medium layer between the first substrate and the second substrate.
Abstract translation: 提供一种制造柔性电气装置的方法。 该方法包括提供第一衬底，提供与第一衬底相对的第二衬底，其中第一衬底和第二衬底中的一个衬底包括式（I）的聚酰亚胺聚合物，其中B是多环脂族基团，A是含有 至少一个醚键，A'是芳族或脂族基团，并且在第一和第二基底之一上直接制造薄膜晶体管（TFT），其包括式（I）的聚酰亚胺聚合物， 并且在第一基板和第二基板之间布置介质层。
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公开(公告)号：US20130267061A1
公开(公告)日：2013-10-10
申请号：US13912172
申请日：2013-06-06
Applicant: Industrial Technology Research Institute
Inventor： Chi-Fu Tseng , Chyi-Ming Leu , Hsueh-Yi Liao , Yung-Lung Tseng
IPC: H01L51/00
CPC classification number: H01L51/0035 , C08G73/1039 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/1064 , C08G73/1075 , C08G73/1078 , C08L79/08 , H01L31/03926 , Y02E10/50 , Y10T428/10 , Y10T428/31721
Abstract: A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I) wherein B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4, directly fabricating a thin film transistor (TFT) on one of the first and second substrates which includes the polyimide polymer of Formula (I), and disposing a medium layer between the first substrate and the second substrate.
Abstract translation: 提供一种制造柔性电气装置的方法。 该方法包括提供第一衬底，提供与第一衬底相对的第二衬底，其中第一衬底和第二衬底中的一个衬底包括式（I）的聚酰亚胺聚合物，其中B是多环脂族基团，A是含有 至少一个醚键，A'是芳族或脂族基团，并且在第一和第二基底之一上直接制造薄膜晶体管（TFT），其包括式（I）的聚酰亚胺聚合物， 并且在第一基板和第二基板之间布置介质层。
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