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公开(公告)号：US11913925B2
公开(公告)日：2024-02-27
申请号：US17125968
申请日：2020-12-17
Applicant: Industrial Technology Research Institute
Inventor： Ying-Che Lo , Yu-Sheng Lin , Po-Jen Su , Ting-Hao Hsiao
CPC classification number: G01N33/0006 , G01K7/16 , G01L9/125 , G01L27/002 , G01N27/121
Abstract: A sensing device is provided. The sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental sensor disposed on the substrate. The temperature sensor senses temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value from the temperature sensor when the environmental sensor does not operate, and it obtains a second sensed temperature value from the temperature sensor when the environmental sensor operates. The processing circuit obtains a sensed pressure value from the pressure sensor. The processing circuit obtains at least one temperature calibration reference of the pressure sensor according to the first and second sensed temperature values and calibrates the sensed pressure value according to the temperature calibration reference.
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公开(公告)号：US11543297B2
公开(公告)日：2023-01-03
申请号：US16886036
申请日：2020-05-28
Applicant: Industrial Technology Research Institute
Inventor： Ying-Che Lo , Yu-Sheng Lin , Ting-Hao Hsiao , Bor-Shiun Lee
Abstract: A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.
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Patent Agency Ranking
公开(公告)号：US12209888B2
公开(公告)日：2025-01-28
申请号：US18097149
申请日：2023-01-13
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Lu-Pu Liao , Yu-Sheng Lin , Liang-Ying Liu , Chin-Fu Kuo
IPC: G01D5/24
Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.
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公开(公告)号：US11815369B2
公开(公告)日：2023-11-14
申请号：US17863341
申请日：2022-07-12
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Lu-Po Liao , Chin-Fu Kuo , Liang-Ying Liu , Yu-Sheng Lin
CPC classification number: G01D5/24 , G01R27/2605 , G01D18/00 , G01R35/005
Abstract: The differential capacitor device includes a differential capacitor sensing component, a calibration capacitor assembly and two output terminals. The differential capacitive sensing element has a common point terminal, a first non-common point terminal and a second non-common point terminal, and the common point terminal is configured to receive an input voltage. The calibration capacitor assembly has a first calibration capacitor and a second calibration capacitor, one terminal of the calibration capacitor assembly is coupled to the first non-common point terminal and the second non-common point terminal, and the other terminal of the calibration capacitor assembly is configured to receive a first calibration voltage and a second calibration voltage. The two output terminals are respectively coupled to the first non-common point terminal and the second non-common point terminal to output a first signal and a second signal.
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公开(公告)号：US10890548B2
公开(公告)日：2021-01-12
申请号：US15856012
申请日：2017-12-27
Applicant: Industrial Technology Research Institute
Inventor： Ying-Che Lo , Yu-Sheng Lin , Ting-Hao Hsiao
Abstract: A resistive gas sensor is provided. The resistive gas sensor includes a sensing circuit and a determination circuit. The sensing circuit senses a gas to generate a detection signal. The determination circuit performs a frequency-division operation on the detection signal by a frequency-division parameter to generate a frequency-division signal, counts a half of a period of the frequency-division signal to generate a half-period count value, and determines concentration of the gas according to the half-period count value. The determination circuit determines the frequency-division parameter according to the half-period count value.
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公开(公告)号：US20170186786A1
公开(公告)日：2017-06-29
申请号：US15084494
申请日：2016-03-30
Applicant: Industrial Technology Research Institute
Inventor： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC: H01L27/144 , H01L23/522 , H01L23/532 , H01L31/18 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L23/528 , H01L31/0216
CPC classification number: H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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公开(公告)号：US09966394B2
公开(公告)日：2018-05-08
申请号：US15084494
申请日：2016-03-30
Applicant: Industrial Technology Research Institute
Inventor： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC: H01L27/144 , H01L31/0216 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L31/18 , G01J5/02 , G01J5/10 , G01J5/12 , G01J5/20
CPC classification number: H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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