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    Accelerometer with compatibility to complementary metal-oxide-semiconductor technologies
    1.
    发明授权
    Accelerometer with compatibility to complementary metal-oxide-semiconductor technologies 有权

    公开(公告)号：US10539587B2

    公开(公告)日：2020-01-21

    申请号：US15422138

    申请日：2017-02-01

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Steffen Bieselt

    IPC: G01P15/02 ,  G01P15/08

    Abstract: An accelerometer may include a seismic mass to flex based on acceleration components perpendicular to a surface of a substrate. The seismic mass may include a first electrode and a portion of the substrate. A first surface of the seismic mass may be adjacent to a first cavity in the substrate, and a second surface of the seismic mass being adjacent to a second cavity. The first surface of the seismic mass and the second surface of the seismic mass may be on opposite sides of the seismic mass. The accelerometer may include a second electrode separated from the second surface of the seismic mass by at least the second cavity.

    SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES
    4.
    发明申请
    SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES 审中-公开
    用于加速传感器结构的水平积分的系统和方法

    公开(公告)号：US20160185594A1

    公开(公告)日：2016-06-30

    申请号：US15064916

    申请日：2016-03-09

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Roeth ,  Steffen Bieselt

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0764 ,  H01L21/3065 ,  H01L29/84

    Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

    Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。

    Carrier with hollow chamber and support structure therein
    5.
    发明授权
    Carrier with hollow chamber and support structure therein 有权
    其中具有中空室和支撑结构的载体

    公开(公告)号：US09263357B2

    公开(公告)日：2016-02-16

    申请号：US14098580

    申请日：2013-12-06

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Steffen Bieselt

    IPC: H01L23/053 ,  H01L21/02 ,  H01L21/48 ,  H01L21/762 ,  H05K1/02

    CPC classification number: H01L21/481 ,  H01L21/02104 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/764 ,  H01L23/053 ,  H01L2924/0002 ,  H05K1/02 ,  Y10T428/13 ,  H01L2924/00

    Abstract: According to various embodiments, a carrier may include: a hollow chamber spaced apart from a surface of the carrier; and at least one support structure within the hollow chamber connecting a first region of the carrier disposed over the hollow chamber with a second region of the carrier disposed below the hollow chamber, wherein at least a part of a surface of the at least one support structure is spaced apart from an inner surface of the hollow chamber, and wherein the at least one support structure includes an electrically insulating material.

    Abstract translation: 根据各种实施例，载体可以包括：与载体的表面间隔开的中空室; 以及在所述中空室内的至少一个支撑结构，其将布置在所述中空室上方的所述载体的第一区域与设置在所述中空室下方的所述载体的第二区域连接，其中所述至少一个支撑结构的表面的至少一部分 与所述中空室的内表面间隔开，并且其中所述至少一个支撑结构包括电绝缘材料。

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