DIE INTERCONNECT SUBSTRATES, A SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A DIE INTERCONNECT SUBSTRATE

    公开(公告)号:US20250149501A1

    公开(公告)日:2025-05-08

    申请号:US19013849

    申请日:2025-01-08

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

    DIE INTERCONNECT SUBSTRATES, A SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A DIE INTERCONNECT SUBSTRATE

    公开(公告)号:US20210398941A1

    公开(公告)日:2021-12-23

    申请号:US17466842

    申请日:2021-09-03

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

    GALVANIC CORROSION PROTECTION FOR SEMICONDUCTOR PACKAGES

    公开(公告)号:US20200266149A1

    公开(公告)日:2020-08-20

    申请号:US16646932

    申请日:2017-12-30

    Abstract: Techniques of protecting cored or coreless semiconductor packages having materials formed from dissimilar metals from galvanic corrosion are described. An exemplary semiconductor package comprises one or more build-up layers; first and second semiconductor components (e.g., die, EMIB, etc.) on or embedded in the one or more build-up layers. The first semiconductor component may be electrically coupled to the second semiconductor component via a contact pad and an interconnect structure that are formed in the one or more build-up layers. The contact pad can comprise a contact region, a non-contact region, and a gap region that separates the contact region from the non-contact region. Coupling of the contact pad and an interconnect structure is performed by coupling only the contact region with the interconnect structure. Also, a surface area of the contact region can be designed to substantially equal to a surface area of the interconnect structure.

    DIE INTERCONNECT SUBSTRATES, A SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A DIE INTERCONNECT SUBSTRATE

    公开(公告)号:US20200027856A1

    公开(公告)日:2020-01-23

    申请号:US16586820

    申请日:2019-09-27

    Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

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