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公开(公告)号:US20250149501A1
公开(公告)日:2025-05-08
申请号:US19013849
申请日:2025-01-08
Applicant: Intel Corporation
Inventor: Rahul JAIN , Ji Yong PARK , Kyu Oh LEE
IPC: H01L23/00 , H01L23/538 , H01L25/00 , H01L25/065
Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.
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2.
公开(公告)号:US20220367104A1
公开(公告)日:2022-11-17
申请号:US17873518
申请日:2022-07-26
Applicant: Intel Corporation
Inventor: Cheng XU , Kyu-Oh LEE , Junnan ZHAO , Rahul JAIN , Ji Yong PARK , Sai VADLAMANI , Seo Young KIM
Abstract: Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.
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公开(公告)号:US20210398941A1
公开(公告)日:2021-12-23
申请号:US17466842
申请日:2021-09-03
Applicant: Intel Corporation
Inventor: Rahul JAIN , Ji Yong PARK , Kyu Oh LEE
IPC: H01L23/00 , H01L25/00 , H01L23/538 , H01L25/065
Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.
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4.
公开(公告)号:US20240063173A1
公开(公告)日:2024-02-22
申请号:US18385167
申请日:2023-10-30
Applicant: Intel Corporation
Inventor: Rahul JAIN , Ji Yong PARK , Kyu Oh LEE
IPC: H01L23/00 , H01L25/00 , H01L23/538 , H01L25/065
CPC classification number: H01L24/81 , H01L25/50 , H01L23/5385 , H01L24/17 , H01L25/0652 , H01L23/5383 , H01L23/5384 , H01L2224/16235 , H01L2224/16113
Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.
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公开(公告)号:US20220359115A1
公开(公告)日:2022-11-10
申请号:US17873509
申请日:2022-07-26
Applicant: Intel Corporation
Inventor: Kyu-Oh LEE , Rahul JAIN , Sai VADLAMANI , Cheng XU , Ji Yong PARK , Junnan ZHAO , Seo Young KIM
IPC: H01F27/32 , H01L23/498 , H01F41/04 , H01L21/48 , H01F27/28
Abstract: Apparatuses, systems and methods associated with a substrate assembly with an encapsulated magnetic feature for an inductor are disclosed herein. In embodiments, a substrate assembly may include a base substrate, a magnetic feature encapsulated within the base substrate, and a coil, wherein a portion of the coil extends through the magnetic feature. Other embodiments may be described and/or claimed.
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6.
公开(公告)号:US20190304933A1
公开(公告)日:2019-10-03
申请号:US15938114
申请日:2018-03-28
Applicant: Intel Corporation
Inventor: Cheng XU , Kyu-Oh LEE , Junnan ZHAO , Rahul JAIN , Ji Yong PARK , Sai VADLAMANI , Seo Young KIM
IPC: H01L23/64 , H01L23/498 , H01L23/00 , H01L21/48
Abstract: Embodiments include an electronic package that includes a first layer that comprises a dielectric material and a second layer over the first layer, where the second layer comprises a magnetic material. In an embodiment, a third layer is formed over the second layer, where the third layer comprises a dielectric material. In an embodiment, the third layer entirely covers a first surface of the second layer. In an embodiment a first conductive layer and a second conductive layer are embedded within the second layer. In an embodiment, sidewalls of the first conductive layer and the second conductive layer are substantially vertical.
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公开(公告)号:US20170154828A1
公开(公告)日:2017-06-01
申请号:US14953779
申请日:2015-11-30
Applicant: INTEL CORPORATION
Inventor: Timothy A. GOSSELIN , Patrick NARDI , Kartik SRINIVASAN , Amram EITAN , Ji Yong PARK , Christopher L. RUMER , George S. KOSTIEW
CPC classification number: H01L22/12 , B23K1/0016 , B23K20/002 , B23K20/026 , B23K20/16 , B23K20/233 , B23K20/24 , B23K20/26 , B23K31/12 , B23K2101/42 , H01L22/20 , H01L24/14 , H01L24/75 , H01L2224/81192 , H01L2924/351
Abstract: A method and machine-readable medium including non-transitory program instructions that when executed by a processor cause the processor to perform a method including measuring at least one parameter of a substrate or a die; and establishing or modifying a thermal compression bonding recipe based on the at least one parameter, wherein the thermal compression bonding recipe is operable for thermal compression bonding of the die and the substrate. A thermal compression bonding tool including a pedestal operable to hold a substrate during a thermal compression bonding process and a bond head operable to engage a die, the tool including a controller machine readable instructions to process a substrate and a die combination, the instructions including an algorithm to implement or modify a thermal compression bonding process based on a parameter of a substrate or die.
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公开(公告)号:US20200266149A1
公开(公告)日:2020-08-20
申请号:US16646932
申请日:2017-12-30
Applicant: Intel Corporation
Inventor: Cheng XU , Junnan ZHAO , Ji Yong PARK , Kyu Oh LEE
IPC: H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56 , H01L25/065 , H01L23/31
Abstract: Techniques of protecting cored or coreless semiconductor packages having materials formed from dissimilar metals from galvanic corrosion are described. An exemplary semiconductor package comprises one or more build-up layers; first and second semiconductor components (e.g., die, EMIB, etc.) on or embedded in the one or more build-up layers. The first semiconductor component may be electrically coupled to the second semiconductor component via a contact pad and an interconnect structure that are formed in the one or more build-up layers. The contact pad can comprise a contact region, a non-contact region, and a gap region that separates the contact region from the non-contact region. Coupling of the contact pad and an interconnect structure is performed by coupling only the contact region with the interconnect structure. Also, a surface area of the contact region can be designed to substantially equal to a surface area of the interconnect structure.
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9.
公开(公告)号:US20200027856A1
公开(公告)日:2020-01-23
申请号:US16586820
申请日:2019-09-27
Applicant: Intel Corporation
Inventor: Rahul JAIN , Ji Yong PARK , Kyu Oh LEE
IPC: H01L23/00 , H01L23/538 , H01L25/00 , H01L25/065
Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.
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10.
公开(公告)号:US20200006180A1
公开(公告)日:2020-01-02
申请号:US16024697
申请日:2018-06-29
Applicant: Intel Corporation
Inventor: Andrew BROWN , Ji Yong PARK , Siddharth ALUR , Cheng XU , Amruthavalli ALUR
Abstract: Embodiments include an electronic package and methods of forming an electronic package. In an embodiment, the electronic package comprises a substrate, and a plurality of conductive features formed over the substrate. In an embodiment, a bilayer build-up layer is formed over the plurality of conductive features. In an embodiment, the bilayer build-up layer comprises a first dielectric layer and a second dielectric layer. In an embodiment, a surface of the first dielectric layer comprises depressions. In an embodiment, the second dielectric layer is disposed in the depressions of the surface of the first dielectric layer.
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