Abstract:
Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.
Abstract:
Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.
Abstract:
A method includes identifying a wafer position for a plurality of die on a wafer, storing the wafer position for each of the plurality of die in a database, dicing the wafer into a plurality of singulated die, positioning each of the singulated die in a die position location on a tray, and storing the die position on the tray for each of the singulated die in the database. The database includes information including the wafer position associated with each die position. The tray is transported to a processing tool, and at least one of the plurality of singulated die is removed from the die position on the tray and processed in the processing tool. The processed singulated die is replaced in the same defined location on the tray that the singulated die was positioned in prior to the processing. Other embodiments are described and claimed.
Abstract:
Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.
Abstract:
A method includes identifying a wafer position for a plurality of die on a wafer, storing the wafer position for each of the plurality of die in a database, dicing the wafer into a plurality of singulated die, positioning each of the singulated die in a die position location on a tray, and storing the die position on the tray for each of the singulated die in the database. The database includes information including the wafer position associated with each die position. The tray is transported to a processing tool, and at least one of the plurality of singulated die is removed from the die position on the tray and processed in the processing tool. The processed singulated die is replaced in the same defined location on the tray that the singulated die was positioned in prior to the processing. Other embodiments are described and claimed.